JP6094043B2 - 半導体レーザ素子 - Google Patents
半導体レーザ素子 Download PDFInfo
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- JP6094043B2 JP6094043B2 JP2012060365A JP2012060365A JP6094043B2 JP 6094043 B2 JP6094043 B2 JP 6094043B2 JP 2012060365 A JP2012060365 A JP 2012060365A JP 2012060365 A JP2012060365 A JP 2012060365A JP 6094043 B2 JP6094043 B2 JP 6094043B2
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- 239000004065 semiconductor Substances 0.000 title claims description 108
- 238000005253 cladding Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000926 separation method Methods 0.000 claims description 22
- 230000006866 deterioration Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01S5/00—Semiconductor lasers
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- H01S5/042—Electrical excitation ; Circuits therefor
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S2301/00—Functional characteristics
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- H01S5/00—Semiconductor lasers
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- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
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- H01S5/00—Semiconductor lasers
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- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
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- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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Description
図1は、本発明の実施の形態1に係る半導体レーザ素子の正面図である。半導体レーザ素子10は、基板12を有している。基板12の上には下クラッド層14が形成されている。下クラッド層14の上には活性層16が形成されている。活性層16の上には上クラッド層18が形成されている。上クラッド層18の上にはコンタクト層20が形成されている。
実施の形態1に係る半導体レーザ素子との相違点を中心に説明する。図9は、本発明の実施の形態2に係る半導体レーザ素子の正面図である。半導体レーザ素子100の複数のリッジストライプ21a、21b、21c、21dを分離する分離部は、プロトン注入部102で形成されている。プロトン注入部102は、基板12の上に下クラッド層14、活性層16、上クラッド層18、及びコンタクト層20を形成した後に、ストライプ状にプロトンを注入して形成する。本発明の実施の形態2に係る半導体レーザ素子によれば、プロトン注入により容易に分離部を形成できる。
実施の形態1に係る半導体レーザ素子との相違点を中心に説明する。図10は、本発明の実施の形態3に係る半導体レーザ素子の正面図である。半導体レーザ素子200の複数のリッジストライプ21a、21b、21c、21dを分離する分離部は、不純物拡散部202で形成されている。不純物拡散部202は、基板12の上に下クラッド層14、活性層16、上クラッド層18、及びコンタクト層20を形成した後に、ストライプ状に不純物を拡散して形成する。本発明の実施の形態3に係る半導体レーザ素子によれば、不純物を拡散させて容易に分離部を形成できる。
実施の形態1に係る半導体レーザ素子との相違点を中心に説明する。図11は、本発明の実施の形態4に係る半導体レーザ素子の正面図である。半導体レーザ素子300の上クラッド層302は、活性層16の上と活性層16の側面に一体的に形成されている。複数のリッジストライプ21a、21b、21c、21dを分離する分離部は、絶縁膜22と表面電極24の一部(リッジ間部分24b)で形成されている。
実施の形態5は、半導体レーザアレイに関する。実施の形態5に係る半導体レーザアレイを構成する個々の半導体レーザ素子は、実施の形態1に係る半導体レーザ素子10と同じ構造を有している。
Claims (3)
- 基板と、
前記基板の上に、分離部で分離して形成された複数のリッジストライプと、
前記複数のリッジストライプの上に一体的に形成された表面電極と、
前記基板の裏面に形成された裏面電極と、を備え、
前記複数のリッジストライプはそれぞれ、前記基板の上に形成された下クラッド層と、前記下クラッド層の上に形成された活性層と、前記活性層の上に形成された上クラッド層と、前記上クラッド層の上に形成されたコンタクト層を備え、
前記複数のリッジストライプのうち、中央のリッジストライプの幅は両端のリッジストライプの幅より大きく、
前記分離部は、
前記複数のリッジストライプの側面に形成された絶縁膜と、
前記表面電極の一部であって、前記絶縁膜と接しつつ前記複数のリッジストライプの間を埋めるリッジ間部分と、を備え、
前記中央のリッジストライプと前記表面電極の接触幅は、前記両端のリッジストライプと前記表面電極の接触幅より大きいことを特徴とする半導体レーザ素子。 - 前記上クラッド層は、前記活性層の上と前記活性層の側面に一体的に形成されたことを特徴とする請求項1に記載の半導体レーザ素子。
- 前記複数のリッジストライプはそれぞれ、平面視で長手方向の端部において幅が最大になるように形成されたことを特徴とする請求項1又は2に記載の半導体レーザ素子。
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JP2012060365A JP6094043B2 (ja) | 2012-03-16 | 2012-03-16 | 半導体レーザ素子 |
US13/748,664 US8855161B2 (en) | 2012-03-16 | 2013-01-24 | Semiconductor laser device, method of manufacturing semiconductor laser device, and semiconductor laser array |
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JP2012060365A JP6094043B2 (ja) | 2012-03-16 | 2012-03-16 | 半導体レーザ素子 |
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JP2013197168A JP2013197168A (ja) | 2013-09-30 |
JP6094043B2 true JP6094043B2 (ja) | 2017-03-15 |
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JP6094043B2 (ja) * | 2012-03-16 | 2017-03-15 | 三菱電機株式会社 | 半導体レーザ素子 |
JP6244668B2 (ja) * | 2013-05-31 | 2017-12-13 | 住友電気工業株式会社 | 量子カスケードレーザ |
JP6244667B2 (ja) * | 2013-05-31 | 2017-12-13 | 住友電気工業株式会社 | 量子カスケードレーザ |
JP2017092088A (ja) * | 2015-11-04 | 2017-05-25 | 株式会社ソディック | 発光素子 |
JP6771950B2 (ja) * | 2016-05-17 | 2020-10-21 | ローム株式会社 | 半導体レーザ装置およびその製造方法 |
JP6627651B2 (ja) | 2016-06-09 | 2020-01-08 | 三菱電機株式会社 | レーザ素子、レーザ素子の製造方法 |
CN110808529A (zh) * | 2018-08-06 | 2020-02-18 | 潍坊华光光电子有限公司 | 一种优化导热的半导体激光器及其制备方法 |
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JP2010166023A (ja) * | 2008-09-30 | 2010-07-29 | Sanyo Electric Co Ltd | 半導体レーザ装置および表示装置 |
JP2011014632A (ja) * | 2009-06-30 | 2011-01-20 | Sony Corp | 半導体レーザ |
JP2012054474A (ja) * | 2010-09-02 | 2012-03-15 | Opnext Japan Inc | 半導体レーザ装置 |
JP2013179210A (ja) * | 2012-02-29 | 2013-09-09 | Panasonic Corp | アレイ型半導体レーザ装置およびその製造方法 |
JP6094043B2 (ja) * | 2012-03-16 | 2017-03-15 | 三菱電機株式会社 | 半導体レーザ素子 |
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