DE68912852D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE68912852D1
DE68912852D1 DE89116657T DE68912852T DE68912852D1 DE 68912852 D1 DE68912852 D1 DE 68912852D1 DE 89116657 T DE89116657 T DE 89116657T DE 68912852 T DE68912852 T DE 68912852T DE 68912852 D1 DE68912852 D1 DE 68912852D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89116657T
Other languages
English (en)
Other versions
DE68912852T2 (de
Inventor
Hideaki C O Intellec Kinoshita
Naohiro C O Intellectu Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68912852D1 publication Critical patent/DE68912852D1/de
Publication of DE68912852T2 publication Critical patent/DE68912852T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE68912852T 1988-09-09 1989-09-08 Halbleiterlaser. Expired - Fee Related DE68912852T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63225979A JPH069282B2 (ja) 1988-09-09 1988-09-09 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE68912852D1 true DE68912852D1 (de) 1994-03-17
DE68912852T2 DE68912852T2 (de) 1994-06-30

Family

ID=16837888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68912852T Expired - Fee Related DE68912852T2 (de) 1988-09-09 1989-09-08 Halbleiterlaser.

Country Status (5)

Country Link
US (1) US4982409A (de)
EP (1) EP0358227B1 (de)
JP (1) JPH069282B2 (de)
KR (1) KR930000553B1 (de)
DE (1) DE68912852T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5146466A (en) * 1988-09-29 1992-09-08 Sanyo Electric Co., Ltd. Semiconductor laser device
JP2778178B2 (ja) * 1990-01-31 1998-07-23 日本電気株式会社 半導体レーザ
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
JPH03289187A (ja) * 1990-04-06 1991-12-19 Nec Corp 半導体レーザ
JP2553731B2 (ja) * 1990-04-13 1996-11-13 三菱電機株式会社 半導体光素子
DE69104650T2 (de) * 1990-06-05 1995-03-30 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung eines Halbleiterlasers.
US5210767A (en) * 1990-09-20 1993-05-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
JP2757578B2 (ja) * 1991-04-08 1998-05-25 日本電気株式会社 半導体レーザおよびその製造方法
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
DE69407448T2 (de) * 1993-03-03 1998-04-16 Nec Corp Gewinngeführter Diodenlaser
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
DE69517044T2 (de) * 1994-10-18 2000-10-26 Mitsui Chemicals Inc Halbleiterlaservorrichtung
US5727012A (en) * 1996-03-07 1998-03-10 Lucent Technologies Inc. Heterostructure laser
US6185237B1 (en) 1996-06-24 2001-02-06 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
JP2001210910A (ja) * 1999-11-17 2001-08-03 Mitsubishi Electric Corp 半導体レーザ
US6650671B1 (en) * 2000-01-20 2003-11-18 Trumpf Photonics, Inc. Semiconductor diode lasers with improved beam divergence
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
JP4721924B2 (ja) * 2005-12-09 2011-07-13 富士通株式会社 光導波路を伝搬する光と回折格子とを結合させた光素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511310A (en) * 1978-07-10 1980-01-26 Hitachi Ltd Semiconductor laser element
JPS574189A (en) * 1980-06-10 1982-01-09 Matsushita Electric Ind Co Ltd Semiconductor laser device
US4635263A (en) * 1983-07-29 1987-01-06 At&T Bell Laboratories Soliton laser
JPH0632334B2 (ja) * 1984-09-20 1994-04-27 ソニー株式会社 半導体レ−ザ−
JPH0728084B2 (ja) * 1985-07-26 1995-03-29 ソニー株式会社 半導体レーザー
JPS6273687A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 半導体レ−ザ装置
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
JPS62269373A (ja) * 1986-05-19 1987-11-21 Nec Corp 半導体レ−ザ
US5034957A (en) * 1988-02-10 1991-07-23 Kabushiki Kaisha Toshiba Semiconductor laser device

Also Published As

Publication number Publication date
JPH0274088A (ja) 1990-03-14
DE68912852T2 (de) 1994-06-30
JPH069282B2 (ja) 1994-02-02
EP0358227A3 (en) 1990-10-17
EP0358227B1 (de) 1994-02-02
KR900005656A (ko) 1990-04-14
KR930000553B1 (ko) 1993-01-25
EP0358227A2 (de) 1990-03-14
US4982409A (en) 1991-01-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee