KR900005656A - 반도체 레이저 장치 - Google Patents

반도체 레이저 장치 Download PDF

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Publication number
KR900005656A
KR900005656A KR1019890013061A KR890013061A KR900005656A KR 900005656 A KR900005656 A KR 900005656A KR 1019890013061 A KR1019890013061 A KR 1019890013061A KR 890013061 A KR890013061 A KR 890013061A KR 900005656 A KR900005656 A KR 900005656A
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KR
South Korea
Prior art keywords
type cladding
semiconductor laser
cladding layer
laser device
semiconductor substrate
Prior art date
Application number
KR1019890013061A
Other languages
English (en)
Other versions
KR930000553B1 (ko
Inventor
히데아키 기노시타
나오히로 시마다
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900005656A publication Critical patent/KR900005656A/ko
Application granted granted Critical
Publication of KR930000553B1 publication Critical patent/KR930000553B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음

Description

반도체 레이저 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명에 따른 실시예의 주요부를 나타낸 단면도,
제3도는 각 도면에 나타낸 반도체 레이저 장치의 특성을 나타낸 도면.

Claims (1)

  1. 반도체기판(1)에 형성된 활성층(4) 및 n,p형 크래드층(3,5)을 InCaAlP로 형성하는 2중 헤테로구조의 반도체 레이저에 있어서, p형 반도체기판(1)에 형성되는 p형 크래드층(3)과, 상기 활성층(4)을 사이에 두고 형성되는 n형 크래드층(5)의 밴드캡 에너지에 의해 구성되는 비대칭형 2중 헤테로구조를 구비해서, 상기 활성층(4)으로부터의 발광광이 상기 n형 크래드층(5)측으로 도파되도록 된 것을 특징으로 하는 반도체 레이저 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890013061A 1988-09-09 1989-09-09 반도체 레이저장치 KR930000553B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63225979A JPH069282B2 (ja) 1988-09-09 1988-09-09 半導体レーザ装置
JP88-225979 1988-09-09

Publications (2)

Publication Number Publication Date
KR900005656A true KR900005656A (ko) 1990-04-14
KR930000553B1 KR930000553B1 (ko) 1993-01-25

Family

ID=16837888

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890013061A KR930000553B1 (ko) 1988-09-09 1989-09-09 반도체 레이저장치

Country Status (5)

Country Link
US (1) US4982409A (ko)
EP (1) EP0358227B1 (ko)
JP (1) JPH069282B2 (ko)
KR (1) KR930000553B1 (ko)
DE (1) DE68912852T2 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5146466A (en) * 1988-09-29 1992-09-08 Sanyo Electric Co., Ltd. Semiconductor laser device
JP2778178B2 (ja) * 1990-01-31 1998-07-23 日本電気株式会社 半導体レーザ
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
JPH03289187A (ja) * 1990-04-06 1991-12-19 Nec Corp 半導体レーザ
JP2553731B2 (ja) * 1990-04-13 1996-11-13 三菱電機株式会社 半導体光素子
US5190891A (en) * 1990-06-05 1993-03-02 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor laser device in which the p-type clad layer and the active layer are grown at different rates
US5210767A (en) * 1990-09-20 1993-05-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
JP2757578B2 (ja) * 1991-04-08 1998-05-25 日本電気株式会社 半導体レーザおよびその製造方法
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
US5596591A (en) * 1993-03-03 1997-01-21 Nec Corporation Gain-guided type laser diode
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
EP0788203B1 (en) * 1994-10-18 2000-05-17 Mitsui Chemicals, Inc. Semiconductor laser device
US5727012A (en) * 1996-03-07 1998-03-10 Lucent Technologies Inc. Heterostructure laser
EP0847117B1 (en) * 1996-06-24 2004-04-07 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US6577658B1 (en) * 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
JP2001210910A (ja) * 1999-11-17 2001-08-03 Mitsubishi Electric Corp 半導体レーザ
US6650671B1 (en) * 2000-01-20 2003-11-18 Trumpf Photonics, Inc. Semiconductor diode lasers with improved beam divergence
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
JP4721924B2 (ja) * 2005-12-09 2011-07-13 富士通株式会社 光導波路を伝搬する光と回折格子とを結合させた光素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511310A (en) * 1978-07-10 1980-01-26 Hitachi Ltd Semiconductor laser element
JPS574189A (en) * 1980-06-10 1982-01-09 Matsushita Electric Ind Co Ltd Semiconductor laser device
US4635263A (en) * 1983-07-29 1987-01-06 At&T Bell Laboratories Soliton laser
JPH0632334B2 (ja) * 1984-09-20 1994-04-27 ソニー株式会社 半導体レ−ザ−
JPH0728084B2 (ja) * 1985-07-26 1995-03-29 ソニー株式会社 半導体レーザー
JPS6273687A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 半導体レ−ザ装置
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
JPS62269373A (ja) * 1986-05-19 1987-11-21 Nec Corp 半導体レ−ザ
US5034957A (en) * 1988-02-10 1991-07-23 Kabushiki Kaisha Toshiba Semiconductor laser device

Also Published As

Publication number Publication date
EP0358227A3 (en) 1990-10-17
DE68912852D1 (de) 1994-03-17
JPH069282B2 (ja) 1994-02-02
US4982409A (en) 1991-01-01
EP0358227A2 (en) 1990-03-14
EP0358227B1 (en) 1994-02-02
DE68912852T2 (de) 1994-06-30
KR930000553B1 (ko) 1993-01-25
JPH0274088A (ja) 1990-03-14

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