KR930020790A - 면발광형 반도체레이저 - Google Patents

면발광형 반도체레이저 Download PDF

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KR930020790A
KR930020790A KR1019930004813A KR930004813A KR930020790A KR 930020790 A KR930020790 A KR 930020790A KR 1019930004813 A KR1019930004813 A KR 1019930004813A KR 930004813 A KR930004813 A KR 930004813A KR 930020790 A KR930020790 A KR 930020790A
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multilayer film
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가즈히사 우오미
미스즈 사가와
아쯔시 다까이
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가나이 쯔또무
가부시끼가이샤 히다찌세이사꾸쇼
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Abstract

면발광형 반도체레이저에 관한 것으로써, 소자저항의 감소 및 신뢰성의 향상을 위해, 반도체기판상에 적어도 광을 발생하는 활성층을 p형의 반도체다층막 반사경과 n형의 반도체 다층막 반사경 사이에 마련한 적층구조체를 갖는 면발광형 반도체레이저에 있어서, p형의 반도체다층막 반사경을 형성하는 굴절율이 다른 적어도 2종류의 반도체층간의 전도대측 밴드끝 불연속에너지 값이 가전자대측 밴드끝 불연속 에너지 값보다도 크며, 또한 n형의 반도체다층막 반사경을 형성하는 굴절율이 다른 적어도 2종류의 반도체층간의 가전자대측 밴드끝 불연속 에너지값이 전도대측 밴드끝 불연속에너지 값보다도 크게 한다.
이러한 면발광형 반도체레이저를 채용하는 것에 의해, 소자저항의 감소 및 신뢰성이 향상된다.

Description

면발광형 반도체레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 작용을 도시한 원리도.
제2도는 본 발명의 실시예를 도시한 구조도.
제3도는 본 발명의 실시예를 도시한 구조도.

Claims (11)

  1. 반도체가판상에 적어도 광을 발생하는 활성층을 p형의 반도체다층막 반사경과 n형의 반도체다층막 반사경 사이에 마련한 적층 구조체를 갖는 면발광형 반도체레이저에 있어서, 상기 p형의 반도체다층막 반사경과 n형의 반도체다층막 반사경을 구성하는 반도체재료가 다른 것을 특징으로 하는 면발광형 반도체레이저.
  2. 반도체기판상에 적어도 광을 발생하는 활성층을 p형의 반도체다층막 반사경과 n형의 반도체다층막 반사경을 사이에 마련한 적층구조체를 갖는 면발광형 반도체레이저에 있어서, 상기 p형의 반도체다층막 반사경을 형성하는 굴절율이 다른 적어도 2종류의 반도체층간의 전도대측 밴드끝 불연속에너지값이 가전자대측 밴드끝 불연속 에너지값 보다도 크며, 또한 상기 n형의 반도체 다층막 반사경 형성하는 굴절율이 다른 적어도 2종류의 반도체 층간의 가전자대측 밴드끝 불연속에너지값이 전도대측 밴드끝 불연속에너지 값보다도 큰 것을 특징으로 하는 면발광형 반도체레이저.
  3. 반도체기판상에 적어도 광을 발생하는 활성층을 유전체막 다층막 반사경과 p형의 반도체다층막 반사경 사이에 마련한 적층구 조체를 갖는 면발광형 반도체레이저에 있어서, 상기 p형의 반도체다층막 반사경을 형성하는 굴절율이 다른 적어도 2종류의 반도체층간이 전도대측 밴드끝 불연속에너저값이 가전자대측 밴드끝 불연속에너지 값보다도 큰 것을 특징으로 하는 면발광형 반도체레이저.
  4. 반도체기판상에 적어도 광을 발생하는 활성층을 p형의 반도체다층막 반사경과 n형의 반도체다층막 반사경 사이에 마련한 적층구조체를 갖는 면발광형 반도체레이저에 있어서, 상기 p형의 반도체다층막 반사경이 Ⅲ족 원소만이 치환된 굴절율이 다른 적어도 2종류의 Ⅲ-Ⅴ족 반도체층을 형성되며, 또한 상기 n형의 반도체다층막 반사경이 Ⅴ족 원소만이 치환된 굴절율이 다른 적어도 2종류의 Ⅲ-Ⅴ족 반도체층으로 형성되어 있는 것을 특징으로 하는 면발광형 반도체레이저.
  5. 특허청구의 범위 제1항~제4항중 어느 한 항에 있어서, 상기 p형의 반도체다층막 반사경을 형성하는 적어도 2종류의 반도체장치중에서 가장 에너지갭이 큰 반도체층의 p형 불순물농도가 다른 반도체다층막영역의 p형 불순물농도보다도 크며, 또한 상기 n형의 반도체다층막 반사경을 형성하는 적어도 2종류의 반도체층중에서 가장 에너지갭이 큰 반도체층의 n형 불순물농도가 다른 반도체 다층막영역의 n형 불순물농도보다 큰 것을 특징으로 하는 면발광형 반도체레이저.
  6. 반도체기판상에 적어도 광을 발생하는 활성층을 p형의 반도체다층막 반사경과 n형의 반도체다층막 반사경 사이에 마련한 적층구조체를 갖는 면발광형 반도체레이저에 있어서, 상기 p형의 반도체다층막 반사경이 InGaAsP 와 InAlAs의 조합, InGaAsP 와 InGaAlAs의 조합, InAlAs와 InGaAlAs의 조합, InGaAsP와 InAlAsP의 조합, Al조성이 다른 InGaAlAs와 InAlAs의 조합중 어느 것인가로 형성되며, 또한 상기 n형의 반도체다층막 반사경이 InP와 InGaAsP의 조합, 조성이 다른 InGaAsP와 InGaAsP의 조합중 어느 것인가로 형성되어 있는 것을 특징으로 하는 면발광형 반도체레이저.
  7. 특허청구의 범위 제1항~제6항중 어느 한 항에 있어서, 상기 반도체기판은 InP인 것을 특징으로 하는 면발광형 반도체레이저.
  8. 특허청구의 범위 제1항~제7항중 어느 한 항에 있어서, 상기 반도체기판의 도전형의 p형인 것을 특징으로 하는 면발광형 반도체레이저.
  9. 특허청구의 범위 제1항~제8항중 어느 한 항에 있어서, 상기 활성층의 적어도 하나의 층이 양자웰구조로 형성되어 있는 것을 특징으로 하는 면발광형 반도체레이저.
  10. GaAs기판상에 적어도 광을 발생하는 InGaAs양자 웰형 활성층을 p형의 반도체다층막 반사경과 n형의 반도체다층막 반사경 사이에 마련한 적층구조체를 갖는 면발광형 반도체레이저에 있어서, 상기 p형 및 n형의 반도체다층막 반사경이 Al을 포함하고 있지 않으며, 또한 굴절율이 다른 적어도 2종류의 반도체층으로 형성되어 있는 것을 특징으로 하는 면발광형 반도체레이저.
  11. 특허청구의 범위 제10항에 있어서, 상기 p형 및 n형의 반도체다층막 반사경은 InGaP 와 GaAs의 조합 또는 InGaAsP와 GaAs조합으로 구성되어 있는 것을 특징으로 하는 면발광형 반도체레이저.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930004813A 1992-03-31 1993-03-26 면발광형 반도체레이저 KR100271700B1 (ko)

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US5363393A (en) 1994-11-08
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JPH05283791A (ja) 1993-10-29

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