KR870001687A - 반도체 레이저 - Google Patents

반도체 레이저 Download PDF

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Publication number
KR870001687A
KR870001687A KR1019860005967A KR860005967A KR870001687A KR 870001687 A KR870001687 A KR 870001687A KR 1019860005967 A KR1019860005967 A KR 1019860005967A KR 860005967 A KR860005967 A KR 860005967A KR 870001687 A KR870001687 A KR 870001687A
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KR
South Korea
Prior art keywords
layer
active layer
semiconductor laser
algainp
trapping
Prior art date
Application number
KR1019860005967A
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English (en)
Other versions
KR950000115B1 (ko
Inventor
마사오 이께다
Original Assignee
쏘니 가부시기가이샤
오오가 노리오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쏘니 가부시기가이샤, 오오가 노리오 filed Critical 쏘니 가부시기가이샤
Publication of KR870001687A publication Critical patent/KR870001687A/ko
Application granted granted Critical
Publication of KR950000115B1 publication Critical patent/KR950000115B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음.

Description

반도체 레이저
제1도는 본원 발명에 의한 바도체 레이저의 일례의 약선적 확대 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : GaAs 기판 2,4 : 제1 및 제2의 클래드층
4a : AlGaInp층 4b : 저굴절률 고열전도도의 AlGaAs 층
3 : 활성층 5 : 캡층
6,7 : 전극 9 : 히이트싱크

Claims (1)

  1. 최소한 히이트싱크(heat sink)측에서 활성층에 인접하는 클래드층(clad 層)이, 상기 활성층에 대한 캐리어를 가두어 넣는 효과를 나타내는 범위에서 작은 두께를 가지며, 상기 활성층에 비해 큰 에너지 밴드갭폭을 갖는 AlGaInP층과, 이 AlGaInP층에 비해 열전도도가 높으며 상기 활성층에 비해 굴절들이 작고 주로 빛을 가두어 넣는 기능을 갖는 AlGaAs층으로 이루어진 것을 특징으로 하는 반도체 레이저.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860005967A 1985-07-26 1986-07-23 반도체 레이저 KR950000115B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP85-166325 1985-07-26
JP60166325A JPH0728084B2 (ja) 1985-07-26 1985-07-26 半導体レーザー

Publications (2)

Publication Number Publication Date
KR870001687A true KR870001687A (ko) 1987-03-17
KR950000115B1 KR950000115B1 (ko) 1995-01-09

Family

ID=15829263

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860005967A KR950000115B1 (ko) 1985-07-26 1986-07-23 반도체 레이저

Country Status (7)

Country Link
US (1) US4740977A (ko)
JP (1) JPH0728084B2 (ko)
KR (1) KR950000115B1 (ko)
DE (1) DE3625145C2 (ko)
FR (1) FR2585522B1 (ko)
GB (1) GB2178595B (ko)
NL (1) NL194185C (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9664470B2 (en) 2012-08-31 2017-05-30 Kci Co., Ltd. Drum-type magazine
KR20220093804A (ko) * 2020-12-28 2022-07-05 배주환 총열 교체형 소총에 사용되는 드럼 탄창

Families Citing this family (20)

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JPH0766976B2 (ja) * 1987-02-27 1995-07-19 三菱電機株式会社 赤外線検知器
GB2226447B (en) * 1987-02-27 1990-10-31 Mitsubishi Electric Corp An infrared ray detector
EP0397691B1 (en) * 1988-01-06 2000-02-09 Telstra Corporation Limited Current injection laser
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置
US4924471A (en) * 1989-03-13 1990-05-08 Amoco Corporation Method for increasing the output power of a laser diode
US5048036A (en) * 1989-09-18 1991-09-10 Spectra Diode Laboratories, Inc. Heterostructure laser with lattice mismatch
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
EP0695006B1 (en) * 1990-05-09 1998-03-04 Sharp Kabushiki Kaisha A method for producing a compound semiconductor laser device
US5200972A (en) * 1991-06-17 1993-04-06 The United States Of America As Represented By The Secretary Of The Navy ND laser with co-doped ion(s) pumped by visible laser diodes
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
US5559819A (en) * 1994-04-19 1996-09-24 Nippondenso Co., Ltd. Semiconductor laser device
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
JPH08264898A (ja) * 1995-03-23 1996-10-11 Mitsubishi Electric Corp 半導体レーザ装置
US6298078B1 (en) * 1999-02-25 2001-10-02 Opto Power Corporation Laser diodes with composite material systems which decouple refractive index and band gap profiles
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US6646777B2 (en) 2002-02-27 2003-11-11 Jds Uniphase Corporation Optical isolator with improved mounting characteristics
US6773532B2 (en) * 2002-02-27 2004-08-10 Jds Uniphase Corporation Method for improving heat dissipation in optical transmitter
JP2005167137A (ja) * 2003-12-05 2005-06-23 Mitsubishi Electric Corp 半導体レーザ装置
KR100689501B1 (ko) * 2005-02-03 2007-03-02 삼성전자주식회사 광대역 반도체 광소자
JP2007053242A (ja) * 2005-08-18 2007-03-01 Fuji Xerox Co Ltd 半導体レーザ装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1263835A (en) * 1970-10-15 1972-02-16 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
US3946334A (en) * 1973-11-14 1976-03-23 Nippon Electric Company, Limited Injection semiconductor laser device
CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser
JPS5627987A (en) * 1979-08-15 1981-03-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS5637687A (en) * 1979-09-04 1981-04-11 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5688388A (en) * 1979-12-19 1981-07-17 Matsushita Electric Ind Co Ltd Semiconductor laser device
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
JPH0654821B2 (ja) * 1985-06-05 1994-07-20 日本電気株式会社 半導体発光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9664470B2 (en) 2012-08-31 2017-05-30 Kci Co., Ltd. Drum-type magazine
KR20220093804A (ko) * 2020-12-28 2022-07-05 배주환 총열 교체형 소총에 사용되는 드럼 탄창

Also Published As

Publication number Publication date
US4740977A (en) 1988-04-26
DE3625145A1 (de) 1987-01-29
KR950000115B1 (ko) 1995-01-09
FR2585522A1 (fr) 1987-01-30
FR2585522B1 (fr) 1994-07-08
GB2178595A (en) 1987-02-11
DE3625145C2 (de) 1999-12-16
JPH0728084B2 (ja) 1995-03-29
NL194185B (nl) 2001-04-02
GB2178595B (en) 1988-07-20
NL8601929A (nl) 1987-02-16
NL194185C (nl) 2001-08-03
GB8618049D0 (en) 1986-09-03
JPS6226885A (ja) 1987-02-04

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