KR870002669A - 반도체 레이저다이오드 - Google Patents

반도체 레이저다이오드 Download PDF

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Publication number
KR870002669A
KR870002669A KR1019860006998A KR860006998A KR870002669A KR 870002669 A KR870002669 A KR 870002669A KR 1019860006998 A KR1019860006998 A KR 1019860006998A KR 860006998 A KR860006998 A KR 860006998A KR 870002669 A KR870002669 A KR 870002669A
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South Korea
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layer
laser diode
current blocking
refractive index
semiconductor laser
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KR1019860006998A
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English (en)
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KR900000075B1 (ko
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히로코 나가사카
게니치 히타코시
나오히로 시마다
모토유키 야마모토
마사키 오카지마
요시오 이즈카
하츠미 가와타
히데아키 기노시타
노브유키 마츠우라
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와타리 스기이찌로
가부시끼이샤 도오시바
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Priority claimed from JP18553285A external-priority patent/JPH0644661B2/ja
Priority claimed from JP18553185A external-priority patent/JPH0644660B2/ja
Application filed by 와타리 스기이찌로, 가부시끼이샤 도오시바 filed Critical 와타리 스기이찌로
Publication of KR870002669A publication Critical patent/KR870002669A/ko
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Publication of KR900000075B1 publication Critical patent/KR900000075B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음

Description

반도체 레이저다이오드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 따라 슬랩결합도파층이 구비된 안정한 가로모우드 GaAlAs 레이저다이오드의 사시도.
제2a 내지 제2도c도는 다층 레이저다이오드구조의 단면도를 나타내는 것으로, 제1도에 도시된 반도체레이저다이오드를 형성시키는 순차적인 주요공정을 나타낸다.
제3도는 제1도에 도시된 반도체레이저다이오드에서의 광출력제한계수 대 도파층의 두께(t), 도파층활성층간의 거리(h), 유효굴절률차(Δneff)의 계산곡선을 나타낸다.

Claims (8)

  1. 제1도전형의 반도체기판(12)과, 상기 반도체기판(12)위에 차례로 설치되어 제1, 제2도전형을 각각 갖는 제1, 제2클래딩층(14)(18),상기 제1,제2클래딩층(14)(18)에 샌드위치되는 비도우핑반도체막으로 이루어지는 활성층(16), 제1도전형으로 된 전류블로킹층(20)(상기 제2클래딩층(18)과 전류블로킹층(20)에는 챈널도랑(22)이 상기 전류블로킹층(20)을 2개부분으로 분할시킨 만큼 깊이 형성됨), 제2도전형이면서 상기 챈널도랑(22)과 전류블로킹층(20)을 피복시켜서 가로모우드레이저발진용 슬랩결합도파구조를 형성시키는 반도체 도파층(24), 제2도전형으로 상기 도파층(24)위에 형성되는 피막층(26)과 접촉층(28)을 구비하면서 된 반도체레이저다이오드에 있어서, 상기 제2클래딩(18)과 상기 전류블로킹층(20) 및 상기 도파층(24)이 알루미늄을 함유하는 화합물반도체로 구성되므로써 상기 층들간의 격자정합성을 개선해주도록 된 것을 특징으로 하는 반도체 레이저다이오드.
  2. 제1항에 있어서, 상기 전류블로킹층(20)은 상기 도파층(24)보다 알루미늄의 함유량이 많도록 된 것을 특징으로 하는 반도체 레이저다이오드.
  3. 제2항에 있어서, 상기 전류블로킹층(20)은 상기 제2클래딩층(18)과 실제로 동일하게 알루미늄을 함유하도록 된 것을 특징으로 하는 반도체 레이저다이오드.
  4. 제2항에 있어서, 상기 전류블로킹층(20)과 상기 제2클래딩층(18)에는 저면의 폭이 2[㎛]이하인 챈널도랑(22)이 형성된 것을 특징으로 하는 반도체 레이저다이오드.
  5. 제2항에 있어서, 제2클래딩층(18)과 전류블로킹층(20) 및 도파층(24)은 알루미늄을 함유하는 갈륨아세나이드 반도체물질로 구성된 것을 특징으로 하는 반도체레이저다이오드.
  6. 제6항에 있어서, 상기 제2클래딩층(18)과 전류블로킹층(20) 및 도파층(24)은 챈널도랑(24)에서 측정되는 제1굴절률과 레이저다이오드의 나머지영역에서 측정되는 제2굴절률을 설정하되 제1유효굴절률과 제2유효굴절률은 6×10-3이상으로 설정된 것을 특징으로 하는 반도체레이저다이오드.
  7. 제2항에 있어서, 상기 제2클래딩층(18)은 제1굴절률을 갖는 한편, 상기 도파층(24)은 상기 제1굴절률보다 큰 제2굴절률을 갖도록 된 것을 특징으로 하는 반도체레이저다이오드.
  8. 제7항에 있어서, 상기 피막층(26)은 상기 제2굴절률보다 작은 제3굴절률을 갖도록 된 것을 특징으로 하는 반도체레이저다이오드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860006998A 1985-08-23 1986-08-23 반도체레이저 다이오드 KR900000075B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP60-185532 1985-08-23
JP60-185531 1985-08-23
JP18553285A JPH0644661B2 (ja) 1985-08-23 1985-08-23 半導体レ−ザ装置
JP18553185A JPH0644660B2 (ja) 1985-08-23 1985-08-23 半導体レ−ザ装置

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KR870002669A true KR870002669A (ko) 1987-04-06
KR900000075B1 KR900000075B1 (ko) 1990-01-19

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US (1) US4799228A (ko)
EP (1) EP0214534A3 (ko)
KR (1) KR900000075B1 (ko)

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EP0328393B1 (en) * 1988-02-09 1993-10-06 Kabushiki Kaisha Toshiba Semiconductor laser device and the manufacturing method thereof
US4893313A (en) * 1988-03-14 1990-01-09 Kabushiki Kaisha Toshiba Semiconductor laser device which has a double-hetero structure having an optimal layer thickness
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
JP2831667B2 (ja) * 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
EP0456429B1 (en) * 1990-05-07 1995-12-20 Kabushiki Kaisha Toshiba Semiconductor laser device
JP2624881B2 (ja) * 1990-08-23 1997-06-25 株式会社東芝 半導体レーザ素子およびその製造方法
US6590918B1 (en) * 1999-11-17 2003-07-08 Matsushita Electronics Corporation Semiconductor laser device and method for producing the same
WO2002006866A2 (en) * 2000-07-14 2002-01-24 Massachusetts Institute Of Technology Slab-coupled optical waveguide laser and amplifier
CN1204665C (zh) * 2000-09-08 2005-06-01 三井化学株式会社 半导体激光器装置
JP2006222187A (ja) * 2005-02-09 2006-08-24 Mitsubishi Electric Corp 半導体レーザ
US8571080B2 (en) * 2009-12-02 2013-10-29 Massachusetts Institute Of Technology High efficiency slab-coupled optical waveguide laser and amplifier

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JPH067618B2 (ja) * 1983-12-26 1994-01-26 株式会社東芝 半導体レ−ザ装置

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EP0214534A3 (en) 1988-04-20
KR900000075B1 (ko) 1990-01-19
EP0214534A2 (en) 1987-03-18
US4799228A (en) 1989-01-17

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