KR880011965A - 분포 귀환형 반도체 레이저 - Google Patents

분포 귀환형 반도체 레이저 Download PDF

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Publication number
KR880011965A
KR880011965A KR1019880001304A KR880001304A KR880011965A KR 880011965 A KR880011965 A KR 880011965A KR 1019880001304 A KR1019880001304 A KR 1019880001304A KR 880001304 A KR880001304 A KR 880001304A KR 880011965 A KR880011965 A KR 880011965A
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South Korea
Prior art keywords
distributed feedback
feedback laser
waveguide
layer
cladding layer
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KR1019880001304A
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English (en)
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KR960009303B1 (en
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쇼지 히라타
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오가 노리오
소니 가부시키가이샤
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Application filed by 오가 노리오, 소니 가부시키가이샤 filed Critical 오가 노리오
Publication of KR880011965A publication Critical patent/KR880011965A/ko
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Publication of KR960009303B1 publication Critical patent/KR960009303B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용없음

Description

분포 귀환형 반도체 레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 분포 귀환형 반도체 레이저의 일례를 나타내는 약선적 확대 단면도,
제2도는 제1도의 A-A선상의 단면도,
제3도는 회절격자(回折格子)의 일례를 나타내는 요부의 확대 단면도.

Claims (1)

  1. 제1의 클래드층과 활성층과 회절격자가 형성된 가이드층과 제2의 클래드층을 가지며, 도파로가 스트라이프 형상으로 형성되어 이루어지는 분포 귀환형 반도체 헤이저에 있어서, 상기 도파로방향에 있어서의 상기 희절격자의 가이드층 두께를 다르게 하므로써 도파광의 위상을 변화시키는 것을 특징으로 하는 분포 귀환형 반도체 레이저.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR88001304A 1987-03-30 1988-02-11 Distributed feedback semiconductor laser KR960009303B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62078763A JPS63244694A (ja) 1987-03-30 1987-03-30 分布帰還形半導体レ−ザ
JP62-78763 1987-03-30

Publications (2)

Publication Number Publication Date
KR880011965A true KR880011965A (ko) 1988-10-31
KR960009303B1 KR960009303B1 (en) 1996-07-18

Family

ID=13670940

Family Applications (1)

Application Number Title Priority Date Filing Date
KR88001304A KR960009303B1 (en) 1987-03-30 1988-02-11 Distributed feedback semiconductor laser

Country Status (6)

Country Link
US (1) US4896331A (ko)
EP (1) EP0285104B1 (ko)
JP (1) JPS63244694A (ko)
KR (1) KR960009303B1 (ko)
CA (1) CA1303195C (ko)
DE (1) DE3875768T2 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
JP2553217B2 (ja) * 1990-04-19 1996-11-13 株式会社東芝 レーザ素子及びその製造方法
US5272714A (en) * 1991-12-12 1993-12-21 Wisconsin Alumni Research Foundation Distributed phase shift semiconductor laser
JP2546135B2 (ja) * 1993-05-31 1996-10-23 日本電気株式会社 半導体微細形状の形成方法、ＩｎＰ回折格子の製造方法および分布帰還型レーザの製造方法
DE4322164A1 (de) * 1993-07-03 1995-01-12 Ant Nachrichtentech Optoelektronisches Bauelement mit Rückkopplungsgitter, mit axial quasi-kontinuierlich und nahezu beliebig variierbarem Gitterkopplungs-Koeffizienten, mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, sowie mit axial nahezu beliebig verteilbarer und variierbarer Phasenverschiebung
DE4322163A1 (de) * 1993-07-03 1995-01-12 Ant Nachrichtentech Auf DFB- oder DBR-Gitter basierendes optoelektronisches Bauelement mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, mit axial beliebig verteilbarer und variierbarer Phasenverschiebung, sowie mit axial quasi-kontinuierlich variierbarem Gitter-Kopplungskoeffizienten
JP4786024B2 (ja) * 2000-11-20 2011-10-05 三菱電機株式会社 分布帰還型レーザおよびその製造方法
US7649916B2 (en) * 2004-06-30 2010-01-19 Finisar Corporation Semiconductor laser with side mode suppression
US8509582B2 (en) * 2005-08-30 2013-08-13 Rambus Delaware Llc Reducing light leakage and improving contrast ratio performance in FTIR display devices
JP2007311522A (ja) * 2006-05-18 2007-11-29 Mitsubishi Electric Corp 半導体レーザ
CN113937616B (zh) * 2021-09-26 2023-03-07 中国科学院长春光学精密机械与物理研究所 半导体激光器阵列、半导体激光器单管及其制备方法
CN117498148A (zh) * 2023-12-29 2024-02-02 江苏华兴激光科技有限公司 一种基于光栅结构相移的方法及dfb激光器

Family Cites Families (13)

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US4096446A (en) * 1976-02-02 1978-06-20 Bell Telephone Laboratories, Incorporated Distributed feedback devices with perturbations deviating from uniformity for removing mode degeneracy
JPS5346712A (en) * 1976-10-12 1978-04-26 Hitachi Ltd Magnetic memory device
JPS5980984A (ja) * 1982-11-01 1984-05-10 Hitachi Ltd 面発光分布帰還形半導体レ−ザ素子
US4775980A (en) * 1983-12-14 1988-10-04 Hitachi, Ltd. Distributed-feedback semiconductor laser device
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置
JPS60152086A (ja) * 1984-01-20 1985-08-10 Hitachi Ltd 半導体レ−ザ装置
US4751710A (en) * 1984-07-26 1988-06-14 Nec Corporation Semiconductor laser device
JPS6147685A (ja) * 1984-08-15 1986-03-08 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS6189690A (ja) * 1984-10-09 1986-05-07 Fujitsu Ltd 半導体レ−ザ
JPS61216383A (ja) * 1985-03-20 1986-09-26 Nec Corp 分布帰還型半導体レ−ザ
JPS61220493A (ja) * 1985-03-27 1986-09-30 Nec Corp 光増幅素子
JPS62189785A (ja) * 1986-02-17 1987-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布ブラツグ反射器を有する半導体装置
US4740987A (en) * 1986-06-30 1988-04-26 American Telephone And Telegraph Company, At&T Bell Laboratories Distributed-feedback laser having enhanced mode selectivity

Also Published As

Publication number Publication date
CA1303195C (en) 1992-06-09
DE3875768T2 (de) 1993-05-27
KR960009303B1 (en) 1996-07-18
EP0285104A3 (en) 1990-05-16
US4896331A (en) 1990-01-23
EP0285104A2 (en) 1988-10-05
JPS63244694A (ja) 1988-10-12
DE3875768D1 (de) 1992-12-17
EP0285104B1 (en) 1992-11-11

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