KR850002705A - 반도체 레이저 - Google Patents
반도체 레이저 Download PDFInfo
- Publication number
- KR850002705A KR850002705A KR1019830004536A KR830004536A KR850002705A KR 850002705 A KR850002705 A KR 850002705A KR 1019830004536 A KR1019830004536 A KR 1019830004536A KR 830004536 A KR830004536 A KR 830004536A KR 850002705 A KR850002705 A KR 850002705A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting region
- semiconductor laser
- laser
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 230000003287 optical effect Effects 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도 및 제4도는 본원 발명에 의한 반도체 레이저의 일례의 확대사시도 및 그 일부를 절단한 확대사시도.
Claims (1)
- 대충 평탄한 활성층에 스트라이프상의 발광영역이 형성되며, 이 발광영역의 광단면부에 있어서 굴절율 가이드적으로 동작시키는 수단을 갖는 동시에, 상기 발광영역의 중앙부에 있어서 이득가이드적으로 동작시키는 수단을 구비한 반도체 레이저.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP82-172201 | 1982-09-30 | ||
| JP57172201A JPS5961981A (ja) | 1982-09-30 | 1982-09-30 | 半導体レ−ザ− |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR850002705A true KR850002705A (ko) | 1985-05-15 |
Family
ID=15937454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019830004536A KR850002705A (ko) | 1982-09-30 | 1983-09-28 | 반도체 레이저 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4606033A (ko) |
| JP (1) | JPS5961981A (ko) |
| KR (1) | KR850002705A (ko) |
| CA (1) | CA1239464A (ko) |
| DE (1) | DE3335372A1 (ko) |
| FR (1) | FR2534078B1 (ko) |
| GB (1) | GB2129212B (ko) |
| NL (1) | NL8303339A (ko) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61121381A (ja) * | 1984-11-19 | 1986-06-09 | Hitachi Ltd | 半導体レ−ザ装置 |
| US5136601A (en) * | 1984-11-19 | 1992-08-04 | Hitachi, Ltd. | Semiconductor laser |
| JPS61289689A (ja) * | 1985-06-18 | 1986-12-19 | Mitsubishi Electric Corp | 半導体発光装置 |
| JPS6218783A (ja) * | 1985-07-17 | 1987-01-27 | Sharp Corp | 半導体レ−ザ素子 |
| US4827483A (en) * | 1985-08-12 | 1989-05-02 | Hitachi, Ltd. | Semiconductor laser device and method of fabricating the same |
| JPS62130586A (ja) * | 1985-12-03 | 1987-06-12 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| DE3604293A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
| DE3604295A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
| JPS6348888A (ja) * | 1986-08-19 | 1988-03-01 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| US4821278A (en) * | 1987-04-02 | 1989-04-11 | Trw Inc. | Inverted channel substrate planar semiconductor laser |
| JPH04155988A (ja) * | 1990-10-19 | 1992-05-28 | Rohm Co Ltd | 半導体レーザ |
| JP3714984B2 (ja) * | 1995-03-06 | 2005-11-09 | シャープ株式会社 | 分布帰還型半導体レーザ装置 |
| JP2017050318A (ja) | 2015-08-31 | 2017-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3838359A (en) * | 1973-11-23 | 1974-09-24 | Bell Telephone Labor Inc | Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode |
| US4309668A (en) * | 1978-02-20 | 1982-01-05 | Nippon Electric Co., Ltd. | Stripe-geometry double heterojunction laser device |
-
1982
- 1982-09-30 JP JP57172201A patent/JPS5961981A/ja active Pending
-
1983
- 1983-09-26 US US06/535,789 patent/US4606033A/en not_active Expired - Fee Related
- 1983-09-26 FR FR8315256A patent/FR2534078B1/fr not_active Expired
- 1983-09-26 CA CA000437553A patent/CA1239464A/en not_active Expired
- 1983-09-28 KR KR1019830004536A patent/KR850002705A/ko not_active Application Discontinuation
- 1983-09-29 NL NL8303339A patent/NL8303339A/nl not_active Application Discontinuation
- 1983-09-29 DE DE19833335372 patent/DE3335372A1/de not_active Withdrawn
- 1983-09-29 GB GB08326054A patent/GB2129212B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2129212B (en) | 1986-07-16 |
| JPS5961981A (ja) | 1984-04-09 |
| DE3335372A1 (de) | 1984-07-12 |
| GB2129212A (en) | 1984-05-10 |
| FR2534078A1 (fr) | 1984-04-06 |
| GB8326054D0 (en) | 1983-11-02 |
| US4606033A (en) | 1986-08-12 |
| FR2534078B1 (fr) | 1987-11-13 |
| NL8303339A (nl) | 1984-04-16 |
| CA1239464A (en) | 1988-07-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |