NL8303339A - Halfgeleider-laserinrichting. - Google Patents
Halfgeleider-laserinrichting. Download PDFInfo
- Publication number
- NL8303339A NL8303339A NL8303339A NL8303339A NL8303339A NL 8303339 A NL8303339 A NL 8303339A NL 8303339 A NL8303339 A NL 8303339A NL 8303339 A NL8303339 A NL 8303339A NL 8303339 A NL8303339 A NL 8303339A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- light emission
- semiconductor laser
- laser device
- active layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 72
- 239000010410 layer Substances 0.000 claims description 99
- 230000031700 light absorption Effects 0.000 claims description 22
- 239000011247 coating layer Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 125000005842 heteroatom Chemical group 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000000356 contaminant Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 11
- 238000005253 cladding Methods 0.000 description 8
- 230000012010 growth Effects 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172201A JPS5961981A (ja) | 1982-09-30 | 1982-09-30 | 半導体レ−ザ− |
| JP17220182 | 1982-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8303339A true NL8303339A (nl) | 1984-04-16 |
Family
ID=15937454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8303339A NL8303339A (nl) | 1982-09-30 | 1983-09-29 | Halfgeleider-laserinrichting. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4606033A (ko) |
| JP (1) | JPS5961981A (ko) |
| KR (1) | KR850002705A (ko) |
| CA (1) | CA1239464A (ko) |
| DE (1) | DE3335372A1 (ko) |
| FR (1) | FR2534078B1 (ko) |
| GB (1) | GB2129212B (ko) |
| NL (1) | NL8303339A (ko) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5136601A (en) * | 1984-11-19 | 1992-08-04 | Hitachi, Ltd. | Semiconductor laser |
| JPS61121381A (ja) * | 1984-11-19 | 1986-06-09 | Hitachi Ltd | 半導体レ−ザ装置 |
| JPS61289689A (ja) * | 1985-06-18 | 1986-12-19 | Mitsubishi Electric Corp | 半導体発光装置 |
| JPS6218783A (ja) * | 1985-07-17 | 1987-01-27 | Sharp Corp | 半導体レ−ザ素子 |
| EP0213826A3 (en) * | 1985-08-12 | 1988-03-16 | Hitachi, Ltd. | Semiconductor laser device and method of fabricating the same |
| JPS62130586A (ja) * | 1985-12-03 | 1987-06-12 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| DE3604295A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
| DE3604293A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
| JPS6348888A (ja) * | 1986-08-19 | 1988-03-01 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| US4821278A (en) * | 1987-04-02 | 1989-04-11 | Trw Inc. | Inverted channel substrate planar semiconductor laser |
| JPH04155988A (ja) * | 1990-10-19 | 1992-05-28 | Rohm Co Ltd | 半導体レーザ |
| JP3714984B2 (ja) * | 1995-03-06 | 2005-11-09 | シャープ株式会社 | 分布帰還型半導体レーザ装置 |
| JP2017050318A (ja) * | 2015-08-31 | 2017-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3838359A (en) * | 1973-11-23 | 1974-09-24 | Bell Telephone Labor Inc | Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode |
| US4309668A (en) * | 1978-02-20 | 1982-01-05 | Nippon Electric Co., Ltd. | Stripe-geometry double heterojunction laser device |
-
1982
- 1982-09-30 JP JP57172201A patent/JPS5961981A/ja active Pending
-
1983
- 1983-09-26 CA CA000437553A patent/CA1239464A/en not_active Expired
- 1983-09-26 FR FR8315256A patent/FR2534078B1/fr not_active Expired
- 1983-09-26 US US06/535,789 patent/US4606033A/en not_active Expired - Fee Related
- 1983-09-28 KR KR1019830004536A patent/KR850002705A/ko not_active Application Discontinuation
- 1983-09-29 NL NL8303339A patent/NL8303339A/nl not_active Application Discontinuation
- 1983-09-29 DE DE19833335372 patent/DE3335372A1/de not_active Withdrawn
- 1983-09-29 GB GB08326054A patent/GB2129212B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB8326054D0 (en) | 1983-11-02 |
| GB2129212A (en) | 1984-05-10 |
| FR2534078B1 (fr) | 1987-11-13 |
| CA1239464A (en) | 1988-07-19 |
| GB2129212B (en) | 1986-07-16 |
| JPS5961981A (ja) | 1984-04-09 |
| FR2534078A1 (fr) | 1984-04-06 |
| DE3335372A1 (de) | 1984-07-12 |
| US4606033A (en) | 1986-08-12 |
| KR850002705A (ko) | 1985-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |