KR840007804A - 반도체 레이저 - Google Patents

반도체 레이저 Download PDF

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Publication number
KR840007804A
KR840007804A KR1019840000807A KR840000807A KR840007804A KR 840007804 A KR840007804 A KR 840007804A KR 1019840000807 A KR1019840000807 A KR 1019840000807A KR 840000807 A KR840000807 A KR 840000807A KR 840007804 A KR840007804 A KR 840007804A
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KR
South Korea
Prior art keywords
section
optical cross
light
distance
semiconductor laser
Prior art date
Application number
KR1019840000807A
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English (en)
Other versions
KR930003844B1 (ko
Inventor
다까요시(외1) 마미네
Original Assignee
오오가 노리,
쏘니 가부시기 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리,, 쏘니 가부시기 가이샤 filed Critical 오오가 노리,
Publication of KR840007804A publication Critical patent/KR840007804A/ko
Application granted granted Critical
Publication of KR930003844B1 publication Critical patent/KR930003844B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H01S2301/185—Semiconductor lasers with special structural design for influencing the near- or far-field for reduction of Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Radar Systems And Details Thereof (AREA)

Abstract

내용 없음.

Description

반도체 레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본원 발명 반도체 레이저의 스트라이프 구조의 패터언을 나타낸 도면.
제5도는 가상관원의 전방의 등위 상면의 곡률반경과 광원과 광단면으로 부터 거리와의 관계를 나타낸 도면.
제6도는 본원 발명의 설명을 위한 계산결과도.

Claims (1)

  1. 스트라이프폭이 광단면에서 떨어진 곳에서 S1, 광단면에서 S2이며, 그 사이에서 연속적으로 변화하는 플레이너스트 라이프 구조의 것에 있어서, 접합면에 평행인 빛의 가상적 광원의 상기 광단면으로 부터의 거리를 D, 이 광단면에서 출사하는 빛의 등위상면의 곡률반경을 R, 상기 광단면에서의 빛의 근시 야상의 반치폭을 W라고 하면, W를 파라미터로 하여 D가 R의 어느값에 있어서 극대로 되며, W가 클수록 D가 큰일로해서, 또 대충 독립적으로 S1이 클수록 R이 크며, S2가 클수록 W가 큰것에 의해, D를 작게하기 위해 S1을 D가 큰 값을 갖는 범위보다도 크거나 작게하고 S2를 작게하는 것을 특징으로 하는 반도체 레이적.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840000807A 1983-02-22 1984-02-20 반도체레이저 KR930003844B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP83-28379 1983-02-22
JP58028379A JPS59154089A (ja) 1983-02-22 1983-02-22 半導体レ−ザ−
JP28379 1983-02-22

Publications (2)

Publication Number Publication Date
KR840007804A true KR840007804A (ko) 1984-12-10
KR930003844B1 KR930003844B1 (ko) 1993-05-13

Family

ID=12247003

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840000807A KR930003844B1 (ko) 1983-02-22 1984-02-20 반도체레이저

Country Status (5)

Country Link
EP (1) EP0135594B1 (ko)
JP (1) JPS59154089A (ko)
KR (1) KR930003844B1 (ko)
DE (1) DE3485698D1 (ko)
WO (1) WO1984003398A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63305580A (ja) * 1987-06-05 1988-12-13 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
GB2195822B (en) * 1986-09-30 1990-01-24 Stc Plc Injection lasers
GB9425729D0 (en) * 1994-09-14 1995-02-22 British Telecomm Otical device
JPH1075011A (ja) * 1996-08-30 1998-03-17 Sony Corp 半導体レーザ
JP2002076512A (ja) * 2000-09-05 2002-03-15 Hitachi Ltd 半導体レーザ装置及び光システム装置
JP2004214226A (ja) * 2002-12-26 2004-07-29 Toshiba Corp 半導体レーザ装置
JP5715332B2 (ja) 2009-08-31 2015-05-07 株式会社東芝 半導体発光素子
US20230011072A1 (en) * 2020-02-28 2023-01-12 Mitsubishi Electric Corporation Semiconductor laser device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51100686A (ja) * 1975-03-03 1976-09-06 Nippon Telegraph & Telephone Handotaisochi
JPS5373090A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
US4349905A (en) * 1980-07-22 1982-09-14 Hewlett-Packard Company Tapered stripe semiconductor laser

Also Published As

Publication number Publication date
WO1984003398A1 (fr) 1984-08-30
EP0135594A1 (en) 1985-04-03
KR930003844B1 (ko) 1993-05-13
EP0135594B1 (en) 1992-05-06
EP0135594A4 (en) 1987-06-29
DE3485698D1 (de) 1992-06-11
JPS59154089A (ja) 1984-09-03

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