GB2195822B - Injection lasers - Google Patents
Injection lasersInfo
- Publication number
- GB2195822B GB2195822B GB8623441A GB8623441A GB2195822B GB 2195822 B GB2195822 B GB 2195822B GB 8623441 A GB8623441 A GB 8623441A GB 8623441 A GB8623441 A GB 8623441A GB 2195822 B GB2195822 B GB 2195822B
- Authority
- GB
- United Kingdom
- Prior art keywords
- injection lasers
- lasers
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
- G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Optical Couplings Of Light Guides (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8623441A GB2195822B (en) | 1986-09-30 | 1986-09-30 | Injection lasers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8623441A GB2195822B (en) | 1986-09-30 | 1986-09-30 | Injection lasers |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8623441D0 GB8623441D0 (en) | 1986-11-05 |
GB2195822A GB2195822A (en) | 1988-04-13 |
GB2195822B true GB2195822B (en) | 1990-01-24 |
Family
ID=10605002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8623441A Expired - Fee Related GB2195822B (en) | 1986-09-30 | 1986-09-30 | Injection lasers |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2195822B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5185759A (en) * | 1990-06-12 | 1993-02-09 | Kabushiki Kaisha Toshiba | Phase-shifted distributed feedback type semiconductor laser device |
US5058121A (en) * | 1990-06-13 | 1991-10-15 | Xerox Corporation | Coupling structures for a phase-locked laser array |
US5228047A (en) * | 1990-09-21 | 1993-07-13 | Sharp Kabushiki Kaisha | Semiconductor laser device and a method for producing the same |
US5844929A (en) * | 1994-02-24 | 1998-12-01 | British Telecommunications Public Limited Company | Optical device with composite passive and tapered active waveguide regions |
DE69519286T2 (en) * | 1994-02-24 | 2001-05-23 | British Telecommunications P.L.C., London | SEMICONDUCTOR DEVICE |
JP3140788B2 (en) * | 1995-12-28 | 2001-03-05 | 松下電器産業株式会社 | Semiconductor laser device |
JPH11307862A (en) * | 1998-04-21 | 1999-11-05 | Nec Corp | Semiconductor laser |
US6590920B1 (en) | 1998-10-08 | 2003-07-08 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
DE202005015673U1 (en) * | 2005-10-03 | 2005-12-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Monolithic integrated BH-laser structure, has diffusion active laser layer exhibiting integrated tapering in lateral direction towards on front facet in formation of structure as reinforcement unit |
FR2897726A1 (en) * | 2006-06-29 | 2007-08-24 | France Telecom | Optical laser source e.g. distributed Bragg reflector laser, for forming e.g. light transmitter module, has deflecting surface deflecting light beam formed in mode adaptation zone whose thickness is less than that of active layer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4251780A (en) * | 1978-07-03 | 1981-02-17 | Xerox Corporation | Stripe offset geometry in injection lasers to achieve transverse mode control |
GB2080609A (en) * | 1980-07-22 | 1982-02-03 | Hewlett Packard Co | Tapered stripe semiconductor laser |
EP0135594A1 (en) * | 1983-02-22 | 1985-04-03 | Sony Corporation | Semiconductor laser |
-
1986
- 1986-09-30 GB GB8623441A patent/GB2195822B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4251780A (en) * | 1978-07-03 | 1981-02-17 | Xerox Corporation | Stripe offset geometry in injection lasers to achieve transverse mode control |
GB2080609A (en) * | 1980-07-22 | 1982-02-03 | Hewlett Packard Co | Tapered stripe semiconductor laser |
EP0135594A1 (en) * | 1983-02-22 | 1985-04-03 | Sony Corporation | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
GB2195822A (en) | 1988-04-13 |
GB8623441D0 (en) | 1986-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19920930 |