DE3485698D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE3485698D1
DE3485698D1 DE8484900883T DE3485698T DE3485698D1 DE 3485698 D1 DE3485698 D1 DE 3485698D1 DE 8484900883 T DE8484900883 T DE 8484900883T DE 3485698 T DE3485698 T DE 3485698T DE 3485698 D1 DE3485698 D1 DE 3485698D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484900883T
Other languages
English (en)
Inventor
Takayoshi Sony Corporat Mamine
Osamu Sony Corporatio Yoneyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE3485698D1 publication Critical patent/DE3485698D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H01S2301/185—Semiconductor lasers with special structural design for influencing the near- or far-field for reduction of Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
DE8484900883T 1983-02-22 1984-02-22 Halbleiterlaser. Expired - Lifetime DE3485698D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58028379A JPS59154089A (ja) 1983-02-22 1983-02-22 半導体レ−ザ−
PCT/JP1984/000063 WO1984003398A1 (fr) 1983-02-22 1984-02-22 Laser a semiconducteur

Publications (1)

Publication Number Publication Date
DE3485698D1 true DE3485698D1 (de) 1992-06-11

Family

ID=12247003

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484900883T Expired - Lifetime DE3485698D1 (de) 1983-02-22 1984-02-22 Halbleiterlaser.

Country Status (5)

Country Link
EP (1) EP0135594B1 (de)
JP (1) JPS59154089A (de)
KR (1) KR930003844B1 (de)
DE (1) DE3485698D1 (de)
WO (1) WO1984003398A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63305580A (ja) * 1987-06-05 1988-12-13 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ
GB2195822B (en) * 1986-09-30 1990-01-24 Stc Plc Injection lasers
GB9425729D0 (en) * 1994-09-14 1995-02-22 British Telecomm Otical device
JPH1075011A (ja) * 1996-08-30 1998-03-17 Sony Corp 半導体レーザ
JP2002076512A (ja) * 2000-09-05 2002-03-15 Hitachi Ltd 半導体レーザ装置及び光システム装置
JP2004214226A (ja) * 2002-12-26 2004-07-29 Toshiba Corp 半導体レーザ装置
JP5715332B2 (ja) * 2009-08-31 2015-05-07 株式会社東芝 半導体発光素子
US20230011072A1 (en) * 2020-02-28 2023-01-12 Mitsubishi Electric Corporation Semiconductor laser device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51100686A (ja) * 1975-03-03 1976-09-06 Nippon Telegraph & Telephone Handotaisochi
JPS5373090A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
US4349905A (en) * 1980-07-22 1982-09-14 Hewlett-Packard Company Tapered stripe semiconductor laser

Also Published As

Publication number Publication date
KR930003844B1 (ko) 1993-05-13
JPS59154089A (ja) 1984-09-03
WO1984003398A1 (fr) 1984-08-30
EP0135594A1 (de) 1985-04-03
EP0135594B1 (de) 1992-05-06
KR840007804A (ko) 1984-12-10
EP0135594A4 (de) 1987-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition