NL190943C - Halfgeleiderlaser. - Google Patents

Halfgeleiderlaser.

Info

Publication number
NL190943C
NL190943C NL8105069A NL8105069A NL190943C NL 190943 C NL190943 C NL 190943C NL 8105069 A NL8105069 A NL 8105069A NL 8105069 A NL8105069 A NL 8105069A NL 190943 C NL190943 C NL 190943C
Authority
NL
Netherlands
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Application number
NL8105069A
Other languages
English (en)
Other versions
NL8105069A (nl
NL190943B (nl
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of NL8105069A publication Critical patent/NL8105069A/nl
Publication of NL190943B publication Critical patent/NL190943B/nl
Application granted granted Critical
Publication of NL190943C publication Critical patent/NL190943C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL8105069A 1980-11-11 1981-11-10 Halfgeleiderlaser. NL190943C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP55158732A JPS5783082A (en) 1980-11-11 1980-11-11 Two wave length semiconductor laser device
JP15873280 1980-11-11

Publications (3)

Publication Number Publication Date
NL8105069A NL8105069A (nl) 1982-06-01
NL190943B NL190943B (nl) 1994-06-01
NL190943C true NL190943C (nl) 1994-11-01

Family

ID=15678115

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8105069A NL190943C (nl) 1980-11-11 1981-11-10 Halfgeleiderlaser.

Country Status (7)

Country Link
US (1) US4426704A (nl)
JP (1) JPS5783082A (nl)
CA (1) CA1171506A (nl)
DE (1) DE3144628A1 (nl)
FR (1) FR2494049A1 (nl)
GB (1) GB2089108B (nl)
NL (1) NL190943C (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10389090B2 (en) 2017-11-21 2019-08-20 International Business Machines Corporation Lateral growth of edge-emitting lasers

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525033B1 (fr) * 1982-04-08 1986-01-17 Bouadma Noureddine Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation
GB8325320D0 (en) * 1983-09-21 1983-10-26 Plessey Co Plc Diamond heatsink assemblies
US4607370A (en) * 1984-02-29 1986-08-19 California Institute Of Technology Paired, separately controlled, and coupled or uncoupled stripe geometry semiconductor lasers
US4747107A (en) * 1985-09-06 1988-05-24 Bell Communications Research, Inc. Single mode injection laser
FR2605801B1 (fr) * 1986-10-23 1989-03-03 Menigaux Louis Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu
DE3708666C2 (de) * 1987-03-17 1997-11-27 Siemens Ag Laseranordnung mit getrennt ansteuerbaren gekoppelten Halbleiterlasern
NL8800509A (nl) * 1988-02-29 1989-09-18 Philips Nv Tweedimensionaal laser array.
DE58906978D1 (de) * 1988-09-22 1994-03-24 Siemens Ag Abstimmbarer DFB-Laser.
FR2706091B1 (fr) * 1993-06-04 1995-07-21 Thomson Csf Laser semiconducteur bicolore.
US6834068B2 (en) * 2001-06-29 2004-12-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
US7382512B2 (en) * 2005-10-26 2008-06-03 Zhizhang Chen Resistivity phase change material
JP7073121B2 (ja) * 2018-01-31 2022-05-23 日本ルメンタム株式会社 光送信サブアセンブリ及び光モジュール

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10389090B2 (en) 2017-11-21 2019-08-20 International Business Machines Corporation Lateral growth of edge-emitting lasers

Also Published As

Publication number Publication date
CA1171506A (en) 1984-07-24
US4426704A (en) 1984-01-17
GB2089108B (en) 1984-03-21
NL8105069A (nl) 1982-06-01
DE3144628A1 (de) 1982-06-16
FR2494049A1 (fr) 1982-05-14
NL190943B (nl) 1994-06-01
GB2089108A (en) 1982-06-16
JPS5783082A (en) 1982-05-24
FR2494049B1 (nl) 1984-12-07
DE3144628C2 (nl) 1987-10-15

Similar Documents

Publication Publication Date Title
NL185186C (nl) Halfgeleiderlaserelement.
DE3584702D1 (de) Halbleiterlaservorrichtung.
DE3584330D1 (de) Halbleiterlaservorrichtung.
NO152579C (no) Sekundaerbatteri.
NO160833C (no) Skjaereinnsats.
DE3482935D1 (de) Halbleiterlaservorrichtung.
DE3587748D1 (de) Halbleiterlaseranordnung.
DE3575501D1 (de) Halbleiterlaser.
DE3483450D1 (de) Halbleiterlaser.
DE3579991D1 (de) Halbleiterlaser.
NO152733C (no) Emulgeringsanordning.
DE3586934D1 (de) Halbleiterlaser.
NL188125C (nl) Halfgeleiderfotodiode.
DE3581557D1 (de) Halbleiterlaser.
NL190943C (nl) Halfgeleiderlaser.
DE3579826D1 (de) Halbleiterlaser.
DE3575243D1 (de) Halbleiterlaser.
IT8119473A0 (it) 3-amidino-ansamicine.
NO810938L (no) Veterinaervaksiner.
DE3485537D1 (de) Halbleiter-laservorrichtung.
DE3485698D1 (de) Halbleiterlaser.
DE3381832D1 (de) Halbleiterlaservorrichtung.
DE3586293D1 (de) Halbleiterlaser.
FI73925B (fi) Styrsystem foer fordon.
DE3482297D1 (de) Halbleiterlaser.

Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
A85 Still pending on 85-01-01
CNR Transfer of rights (patent application after its laying open for public inspection)

Free format text: NIPPON TELEGRAPH AND TELEPHONE CORPORATION

BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

Free format text: 20011110