JPS5783082A - Two wave length semiconductor laser device - Google Patents

Two wave length semiconductor laser device

Info

Publication number
JPS5783082A
JPS5783082A JP55158732A JP15873280A JPS5783082A JP S5783082 A JPS5783082 A JP S5783082A JP 55158732 A JP55158732 A JP 55158732A JP 15873280 A JP15873280 A JP 15873280A JP S5783082 A JPS5783082 A JP S5783082A
Authority
JP
Japan
Prior art keywords
layer
type inp
gainasp
type
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55158732A
Other languages
English (en)
Inventor
Haruo Nagai
Etsuo Noguchi
Kenichiro Takahei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55158732A priority Critical patent/JPS5783082A/ja
Priority to US06/317,592 priority patent/US4426704A/en
Priority to GB8133931A priority patent/GB2089108B/en
Priority to FR8121087A priority patent/FR2494049A1/fr
Priority to DE19813144628 priority patent/DE3144628A1/de
Priority to NL8105069A priority patent/NL190943C/xx
Priority to CA000389957A priority patent/CA1171506A/en
Publication of JPS5783082A publication Critical patent/JPS5783082A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
JP55158732A 1980-11-11 1980-11-11 Two wave length semiconductor laser device Pending JPS5783082A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP55158732A JPS5783082A (en) 1980-11-11 1980-11-11 Two wave length semiconductor laser device
US06/317,592 US4426704A (en) 1980-11-11 1981-11-02 Semiconductor laser with two active layers
GB8133931A GB2089108B (en) 1980-11-11 1981-11-10 Semiconductor laser
FR8121087A FR2494049A1 (fr) 1980-11-11 1981-11-10 Laser a semiconducteurs
DE19813144628 DE3144628A1 (de) 1980-11-11 1981-11-10 "halbleiterlaser"
NL8105069A NL190943C (nl) 1980-11-11 1981-11-10 Halfgeleiderlaser.
CA000389957A CA1171506A (en) 1980-11-11 1981-11-12 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55158732A JPS5783082A (en) 1980-11-11 1980-11-11 Two wave length semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5783082A true JPS5783082A (en) 1982-05-24

Family

ID=15678115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55158732A Pending JPS5783082A (en) 1980-11-11 1980-11-11 Two wave length semiconductor laser device

Country Status (7)

Country Link
US (1) US4426704A (ja)
JP (1) JPS5783082A (ja)
CA (1) CA1171506A (ja)
DE (1) DE3144628A1 (ja)
FR (1) FR2494049A1 (ja)
GB (1) GB2089108B (ja)
NL (1) NL190943C (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01255285A (ja) * 1988-02-29 1989-10-12 Philips Gloeilampenfab:Nv ２次元レーザーアレー

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525033B1 (fr) * 1982-04-08 1986-01-17 Bouadma Noureddine Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation
GB8325320D0 (en) * 1983-09-21 1983-10-26 Plessey Co Plc Diamond heatsink assemblies
US4607370A (en) * 1984-02-29 1986-08-19 California Institute Of Technology Paired, separately controlled, and coupled or uncoupled stripe geometry semiconductor lasers
US4747107A (en) * 1985-09-06 1988-05-24 Bell Communications Research, Inc. Single mode injection laser
FR2605801B1 (fr) * 1986-10-23 1989-03-03 Menigaux Louis Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu
DE3708666C2 (de) * 1987-03-17 1997-11-27 Siemens Ag Laseranordnung mit getrennt ansteuerbaren gekoppelten Halbleiterlasern
EP0360011B1 (de) * 1988-09-22 1994-02-16 Siemens Aktiengesellschaft Abstimmbarer DFB-Laser
FR2706091B1 (fr) * 1993-06-04 1995-07-21 Thomson Csf Laser semiconducteur bicolore.
US6834068B2 (en) * 2001-06-29 2004-12-21 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
US7382512B2 (en) * 2005-10-26 2008-06-03 Zhizhang Chen Resistivity phase change material
US10389090B2 (en) 2017-11-21 2019-08-20 International Business Machines Corporation Lateral growth of edge-emitting lasers
JP7073121B2 (ja) * 2018-01-31 2022-05-23 日本ルメンタム株式会社 光送信サブアセンブリ及び光モジュール

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01255285A (ja) * 1988-02-29 1989-10-12 Philips Gloeilampenfab:Nv ２次元レーザーアレー

Also Published As

Publication number Publication date
NL190943C (nl) 1994-11-01
DE3144628C2 (ja) 1987-10-15
GB2089108B (en) 1984-03-21
DE3144628A1 (de) 1982-06-16
CA1171506A (en) 1984-07-24
FR2494049B1 (ja) 1984-12-07
US4426704A (en) 1984-01-17
FR2494049A1 (fr) 1982-05-14
GB2089108A (en) 1982-06-16
NL190943B (nl) 1994-06-01
NL8105069A (nl) 1982-06-01

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