JPS5512787A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5512787A JPS5512787A JP8624278A JP8624278A JPS5512787A JP S5512787 A JPS5512787 A JP S5512787A JP 8624278 A JP8624278 A JP 8624278A JP 8624278 A JP8624278 A JP 8624278A JP S5512787 A JPS5512787 A JP S5512787A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type
- layer
- area
- strive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To make possible a unit basic traverse mode oscillation at high output by separating the strive structure area performing photoconductive wave effect from a strive area giving light redoubling gain, and by restricting the location of the latter within the part of the center of the former.
CONSTITUTION: On an n type base plate 1 is formed a dual hetero structure by employing the stride board liquid phase growing method to successively grow the second semiconductor layer 2 composed of n type Al0.3Ga0.7As, the first semiconductor layer 3 composed of n type GaAs, and the third semiconductor layer 4 composed of p type Al0.3Ga0.7As. The photoconductive wave with width W' is formed by first etching the dual hetero layer with the part for this conductive wave being remained, then by growing the fourth semiconductor layer 5 that has a larger prohibition width and the lower refractive index than the first semiconductor layer 3. The gain area 8 is formed by diversing the p type impurities into the second semiconductor layer 2 through the window of dielectric film 7 set on the surface of the dual hetero layer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8624278A JPS6054796B2 (en) | 1978-07-14 | 1978-07-14 | semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8624278A JPS6054796B2 (en) | 1978-07-14 | 1978-07-14 | semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5512787A true JPS5512787A (en) | 1980-01-29 |
JPS6054796B2 JPS6054796B2 (en) | 1985-12-02 |
Family
ID=13881329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8624278A Expired JPS6054796B2 (en) | 1978-07-14 | 1978-07-14 | semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6054796B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5881385A (en) * | 1981-11-11 | 1983-05-16 | Matsushita Electric Ind Co Ltd | Driving method for pyroelectric type heat image pick-up tube |
US5394425A (en) * | 1993-02-25 | 1995-02-28 | Fuji Xerox Co., Ltd. | Method of manufacturing a semiconductor laser device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439498U (en) * | 1987-09-04 | 1989-03-09 |
-
1978
- 1978-07-14 JP JP8624278A patent/JPS6054796B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5881385A (en) * | 1981-11-11 | 1983-05-16 | Matsushita Electric Ind Co Ltd | Driving method for pyroelectric type heat image pick-up tube |
US5394425A (en) * | 1993-02-25 | 1995-02-28 | Fuji Xerox Co., Ltd. | Method of manufacturing a semiconductor laser device |
Also Published As
Publication number | Publication date |
---|---|
JPS6054796B2 (en) | 1985-12-02 |
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