JPS5512787A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5512787A
JPS5512787A JP8624278A JP8624278A JPS5512787A JP S5512787 A JPS5512787 A JP S5512787A JP 8624278 A JP8624278 A JP 8624278A JP 8624278 A JP8624278 A JP 8624278A JP S5512787 A JPS5512787 A JP S5512787A
Authority
JP
Japan
Prior art keywords
semiconductor layer
type
layer
area
strive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8624278A
Other languages
Japanese (ja)
Other versions
JPS6054796B2 (en
Inventor
Itsuo Hayashi
Hiroyoshi Kangu
Hiroo Yonezu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8624278A priority Critical patent/JPS6054796B2/en
Publication of JPS5512787A publication Critical patent/JPS5512787A/en
Publication of JPS6054796B2 publication Critical patent/JPS6054796B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To make possible a unit basic traverse mode oscillation at high output by separating the strive structure area performing photoconductive wave effect from a strive area giving light redoubling gain, and by restricting the location of the latter within the part of the center of the former.
CONSTITUTION: On an n type base plate 1 is formed a dual hetero structure by employing the stride board liquid phase growing method to successively grow the second semiconductor layer 2 composed of n type Al0.3Ga0.7As, the first semiconductor layer 3 composed of n type GaAs, and the third semiconductor layer 4 composed of p type Al0.3Ga0.7As. The photoconductive wave with width W' is formed by first etching the dual hetero layer with the part for this conductive wave being remained, then by growing the fourth semiconductor layer 5 that has a larger prohibition width and the lower refractive index than the first semiconductor layer 3. The gain area 8 is formed by diversing the p type impurities into the second semiconductor layer 2 through the window of dielectric film 7 set on the surface of the dual hetero layer.
COPYRIGHT: (C)1980,JPO&Japio
JP8624278A 1978-07-14 1978-07-14 semiconductor laser Expired JPS6054796B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8624278A JPS6054796B2 (en) 1978-07-14 1978-07-14 semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8624278A JPS6054796B2 (en) 1978-07-14 1978-07-14 semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5512787A true JPS5512787A (en) 1980-01-29
JPS6054796B2 JPS6054796B2 (en) 1985-12-02

Family

ID=13881329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8624278A Expired JPS6054796B2 (en) 1978-07-14 1978-07-14 semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6054796B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5881385A (en) * 1981-11-11 1983-05-16 Matsushita Electric Ind Co Ltd Driving method for pyroelectric type heat image pick-up tube
US5394425A (en) * 1993-02-25 1995-02-28 Fuji Xerox Co., Ltd. Method of manufacturing a semiconductor laser device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439498U (en) * 1987-09-04 1989-03-09

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5881385A (en) * 1981-11-11 1983-05-16 Matsushita Electric Ind Co Ltd Driving method for pyroelectric type heat image pick-up tube
US5394425A (en) * 1993-02-25 1995-02-28 Fuji Xerox Co., Ltd. Method of manufacturing a semiconductor laser device

Also Published As

Publication number Publication date
JPS6054796B2 (en) 1985-12-02

Similar Documents

Publication Publication Date Title
JPS5649587A (en) Semiconductor laser device
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS57202791A (en) Laser device
JPS56104488A (en) Semiconductor laser element
JPS5681994A (en) Field effect type semiconductor laser and manufacture thereof
JPS5783082A (en) Two wave length semiconductor laser device
JPS5512787A (en) Semiconductor laser
JPS5269285A (en) Semiconductor laser device
JPS5333050A (en) Production of semiconductor element
JPS5572091A (en) Hall element
JPS55140285A (en) Semiconductor laser
JPS5313423A (en) Photosensitive element of selenium for electronic photography
JPS5524418A (en) Light integrated circuit
JPS5575264A (en) Charge transfer element
JPS5512907A (en) Light waveguide
JPS5522807A (en) Semiconductor laser element and manufacturing of the same
JPS577978A (en) Opto-electronic switch
JPS57167693A (en) Manufacture of optical semiconductor element
JPS5516484A (en) Band semiconductor laser
JPS55125692A (en) Semiconductor laser
JPS5474686A (en) Visible semiconductor laser and its manufacture
JPS5317084A (en) Buried hetero type semiconductor laser device
JPS5493381A (en) Semiconductor light emitting device
JPS5773983A (en) Semiconductor photodetector
JPS5669885A (en) Semiconductor laser device