JPS5516484A - Band semiconductor laser - Google Patents

Band semiconductor laser

Info

Publication number
JPS5516484A
JPS5516484A JP9017278A JP9017278A JPS5516484A JP S5516484 A JPS5516484 A JP S5516484A JP 9017278 A JP9017278 A JP 9017278A JP 9017278 A JP9017278 A JP 9017278A JP S5516484 A JPS5516484 A JP S5516484A
Authority
JP
Japan
Prior art keywords
projection
active layer
band
photowave
thin films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9017278A
Other languages
Japanese (ja)
Inventor
Yasuharu Suematsu
Katsumi Kishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO KOGYO DAIGAKUCHO
Tokyo Institute of Technology NUC
Original Assignee
TOKYO KOGYO DAIGAKUCHO
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO KOGYO DAIGAKUCHO, Tokyo Institute of Technology NUC filed Critical TOKYO KOGYO DAIGAKUCHO
Priority to JP9017278A priority Critical patent/JPS5516484A/en
Publication of JPS5516484A publication Critical patent/JPS5516484A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To stabilize laser operation through confining injection current and oscillation photowave effectively in an active area by creating the active area on the top of a band projection of semiconductor substrate and giving electrode only on the top of the said projection.
CONSTITUTION: Semiconductor thin films 2∼5 varying in composition are created in heteroconstruction on a semiconductor substrate 1 having a band projection 8 along the said projection 8, and an electrode 7 is formed on the projection 8 at the same time. The thin films 2∼5 comprise an active layer 3 having laser gain and clad layers 2, 4 to confine injection carrier and laser beam in the active layer 3, and there is formed PN junction at the interface of the active layer 3 and the clad layers 2, 4. The active layer 3 formed on the projection 8 therefore becomes a band photoconductor horizontally which is surrounded by the clad layer 4 and confines both photowave and carrier accordingly, thus stabilizing the oscillation mode.
COPYRIGHT: (C)1980,JPO&Japio
JP9017278A 1978-07-24 1978-07-24 Band semiconductor laser Pending JPS5516484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9017278A JPS5516484A (en) 1978-07-24 1978-07-24 Band semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9017278A JPS5516484A (en) 1978-07-24 1978-07-24 Band semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5516484A true JPS5516484A (en) 1980-02-05

Family

ID=13991063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9017278A Pending JPS5516484A (en) 1978-07-24 1978-07-24 Band semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5516484A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170993A (en) * 1984-02-16 1985-09-04 Fujikura Ltd Semiconductor laser
JPS6118191A (en) * 1984-07-05 1986-01-27 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
EP0662784A4 (en) * 1993-08-03 1995-06-07 Univ Iowa State Res Found Inc Preemergence weed control using natural herbicides.
KR20190028646A (en) 2016-07-08 2019-03-19 에이지씨 가부시키가이샤 Photosensitive composition, method for producing polymer, method for producing photosensitive composition, method for producing laminate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298487A (en) * 1976-02-16 1977-08-18 Nec Corp Semiconductor junction laser
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth
JPS5316590A (en) * 1976-07-29 1978-02-15 Nec Corp Multilayer thin film optical guide of rib guide stripe type semiconductor and its production

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298487A (en) * 1976-02-16 1977-08-18 Nec Corp Semiconductor junction laser
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth
JPS5316590A (en) * 1976-07-29 1978-02-15 Nec Corp Multilayer thin film optical guide of rib guide stripe type semiconductor and its production

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170993A (en) * 1984-02-16 1985-09-04 Fujikura Ltd Semiconductor laser
JPS6118191A (en) * 1984-07-05 1986-01-27 Matsushita Electric Ind Co Ltd Semiconductor laser device and manufacture thereof
EP0662784A4 (en) * 1993-08-03 1995-06-07 Univ Iowa State Res Found Inc Preemergence weed control using natural herbicides.
KR20190028646A (en) 2016-07-08 2019-03-19 에이지씨 가부시키가이샤 Photosensitive composition, method for producing polymer, method for producing photosensitive composition, method for producing laminate

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