JPS52100885A - Production of semiconductor device by liquid epitaxial growth - Google Patents
Production of semiconductor device by liquid epitaxial growthInfo
- Publication number
- JPS52100885A JPS52100885A JP1739376A JP1739376A JPS52100885A JP S52100885 A JPS52100885 A JP S52100885A JP 1739376 A JP1739376 A JP 1739376A JP 1739376 A JP1739376 A JP 1739376A JP S52100885 A JPS52100885 A JP S52100885A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- production
- semiconductor device
- liquid epitaxial
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To fabricate semiconductor laser by such an epitaxial growth technique as to form active region surrounded by and buried inside the heterojunction on the protruded part.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1739376A JPS52100885A (en) | 1976-02-19 | 1976-02-19 | Production of semiconductor device by liquid epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1739376A JPS52100885A (en) | 1976-02-19 | 1976-02-19 | Production of semiconductor device by liquid epitaxial growth |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52100885A true JPS52100885A (en) | 1977-08-24 |
Family
ID=11942745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1739376A Pending JPS52100885A (en) | 1976-02-19 | 1976-02-19 | Production of semiconductor device by liquid epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52100885A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152879A (en) * | 1978-05-23 | 1979-12-01 | Sharp Corp | Structure of semiconductor laser element and its manufacture |
JPS5516484A (en) * | 1978-07-24 | 1980-02-05 | Tokyo Inst Of Technol | Band semiconductor laser |
JPS55158689A (en) * | 1979-05-30 | 1980-12-10 | Sumitomo Electric Ind Ltd | Semiconductor light emitting device and manufacture thereof |
JPS55158691A (en) * | 1979-05-30 | 1980-12-10 | Sumitomo Electric Ind Ltd | Semiconductor light emitting device manufacture thereof |
JPS56110288A (en) * | 1980-02-05 | 1981-09-01 | Mitsubishi Electric Corp | Semiconductor laser element |
JPS5735391A (en) * | 1980-06-26 | 1982-02-25 | Nec Corp | Manufacture of semiconductor laser |
JPS57160186A (en) * | 1981-03-27 | 1982-10-02 | Nec Corp | Manufacture of semiconductor laser |
JPS5864085A (en) * | 1981-10-13 | 1983-04-16 | Nec Corp | Semiconductor laser and manufacture thereof |
JPS5880889A (en) * | 1981-11-09 | 1983-05-16 | Nec Corp | Semiconductor laser |
JPS5886790A (en) * | 1981-11-19 | 1983-05-24 | Nec Corp | Semiconductor laser element |
JPS60116185A (en) * | 1983-11-28 | 1985-06-22 | Fujikura Ltd | Semiconductor laser |
-
1976
- 1976-02-19 JP JP1739376A patent/JPS52100885A/en active Pending
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5733878B2 (en) * | 1978-05-23 | 1982-07-20 | ||
JPS54152879A (en) * | 1978-05-23 | 1979-12-01 | Sharp Corp | Structure of semiconductor laser element and its manufacture |
JPS5516484A (en) * | 1978-07-24 | 1980-02-05 | Tokyo Inst Of Technol | Band semiconductor laser |
JPS55158689A (en) * | 1979-05-30 | 1980-12-10 | Sumitomo Electric Ind Ltd | Semiconductor light emitting device and manufacture thereof |
JPS55158691A (en) * | 1979-05-30 | 1980-12-10 | Sumitomo Electric Ind Ltd | Semiconductor light emitting device manufacture thereof |
JPS589592B2 (en) * | 1979-05-30 | 1983-02-22 | 住友電気工業株式会社 | Method for manufacturing semiconductor light emitting device |
JPS56110288A (en) * | 1980-02-05 | 1981-09-01 | Mitsubishi Electric Corp | Semiconductor laser element |
JPS5735391A (en) * | 1980-06-26 | 1982-02-25 | Nec Corp | Manufacture of semiconductor laser |
JPH0213834B2 (en) * | 1980-06-26 | 1990-04-05 | Nippon Electric Co | |
JPS57160186A (en) * | 1981-03-27 | 1982-10-02 | Nec Corp | Manufacture of semiconductor laser |
JPS5864085A (en) * | 1981-10-13 | 1983-04-16 | Nec Corp | Semiconductor laser and manufacture thereof |
JPS5880889A (en) * | 1981-11-09 | 1983-05-16 | Nec Corp | Semiconductor laser |
JPS6358390B2 (en) * | 1981-11-09 | 1988-11-15 | Nippon Electric Co | |
JPS5886790A (en) * | 1981-11-19 | 1983-05-24 | Nec Corp | Semiconductor laser element |
JPS622479B2 (en) * | 1981-11-19 | 1987-01-20 | Nippon Electric Co | |
JPS60116185A (en) * | 1983-11-28 | 1985-06-22 | Fujikura Ltd | Semiconductor laser |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |