JPS52100885A - Production of semiconductor device by liquid epitaxial growth - Google Patents

Production of semiconductor device by liquid epitaxial growth

Info

Publication number
JPS52100885A
JPS52100885A JP1739376A JP1739376A JPS52100885A JP S52100885 A JPS52100885 A JP S52100885A JP 1739376 A JP1739376 A JP 1739376A JP 1739376 A JP1739376 A JP 1739376A JP S52100885 A JPS52100885 A JP S52100885A
Authority
JP
Japan
Prior art keywords
epitaxial growth
production
semiconductor device
liquid epitaxial
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1739376A
Other languages
Japanese (ja)
Inventor
Masaaki Ayabe
Ario Mita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1739376A priority Critical patent/JPS52100885A/en
Publication of JPS52100885A publication Critical patent/JPS52100885A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To fabricate semiconductor laser by such an epitaxial growth technique as to form active region surrounded by and buried inside the heterojunction on the protruded part.
JP1739376A 1976-02-19 1976-02-19 Production of semiconductor device by liquid epitaxial growth Pending JPS52100885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1739376A JPS52100885A (en) 1976-02-19 1976-02-19 Production of semiconductor device by liquid epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1739376A JPS52100885A (en) 1976-02-19 1976-02-19 Production of semiconductor device by liquid epitaxial growth

Publications (1)

Publication Number Publication Date
JPS52100885A true JPS52100885A (en) 1977-08-24

Family

ID=11942745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1739376A Pending JPS52100885A (en) 1976-02-19 1976-02-19 Production of semiconductor device by liquid epitaxial growth

Country Status (1)

Country Link
JP (1) JPS52100885A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152879A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture
JPS5516484A (en) * 1978-07-24 1980-02-05 Tokyo Inst Of Technol Band semiconductor laser
JPS55158689A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device and manufacture thereof
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
JPS56110288A (en) * 1980-02-05 1981-09-01 Mitsubishi Electric Corp Semiconductor laser element
JPS5735391A (en) * 1980-06-26 1982-02-25 Nec Corp Manufacture of semiconductor laser
JPS57160186A (en) * 1981-03-27 1982-10-02 Nec Corp Manufacture of semiconductor laser
JPS5864085A (en) * 1981-10-13 1983-04-16 Nec Corp Semiconductor laser and manufacture thereof
JPS5880889A (en) * 1981-11-09 1983-05-16 Nec Corp Semiconductor laser
JPS5886790A (en) * 1981-11-19 1983-05-24 Nec Corp Semiconductor laser element
JPS60116185A (en) * 1983-11-28 1985-06-22 Fujikura Ltd Semiconductor laser

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5733878B2 (en) * 1978-05-23 1982-07-20
JPS54152879A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture
JPS5516484A (en) * 1978-07-24 1980-02-05 Tokyo Inst Of Technol Band semiconductor laser
JPS55158689A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device and manufacture thereof
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
JPS589592B2 (en) * 1979-05-30 1983-02-22 住友電気工業株式会社 Method for manufacturing semiconductor light emitting device
JPS56110288A (en) * 1980-02-05 1981-09-01 Mitsubishi Electric Corp Semiconductor laser element
JPS5735391A (en) * 1980-06-26 1982-02-25 Nec Corp Manufacture of semiconductor laser
JPH0213834B2 (en) * 1980-06-26 1990-04-05 Nippon Electric Co
JPS57160186A (en) * 1981-03-27 1982-10-02 Nec Corp Manufacture of semiconductor laser
JPS5864085A (en) * 1981-10-13 1983-04-16 Nec Corp Semiconductor laser and manufacture thereof
JPS5880889A (en) * 1981-11-09 1983-05-16 Nec Corp Semiconductor laser
JPS6358390B2 (en) * 1981-11-09 1988-11-15 Nippon Electric Co
JPS5886790A (en) * 1981-11-19 1983-05-24 Nec Corp Semiconductor laser element
JPS622479B2 (en) * 1981-11-19 1987-01-20 Nippon Electric Co
JPS60116185A (en) * 1983-11-28 1985-06-22 Fujikura Ltd Semiconductor laser

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees