JPS5316585A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5316585A
JPS5316585A JP9097876A JP9097876A JPS5316585A JP S5316585 A JPS5316585 A JP S5316585A JP 9097876 A JP9097876 A JP 9097876A JP 9097876 A JP9097876 A JP 9097876A JP S5316585 A JPS5316585 A JP S5316585A
Authority
JP
Japan
Prior art keywords
semiconductor device
thyristor
making
make
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9097876A
Other languages
Japanese (ja)
Inventor
Kozo Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9097876A priority Critical patent/JPS5316585A/en
Publication of JPS5316585A publication Critical patent/JPS5316585A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To make a thyristor of a high breakdown voltage by making the surface shape of the main junction exposed to the inside walls of mesa grooves to a regular bevel shape.
JP9097876A 1976-07-29 1976-07-29 Semiconductor device Pending JPS5316585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9097876A JPS5316585A (en) 1976-07-29 1976-07-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9097876A JPS5316585A (en) 1976-07-29 1976-07-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5316585A true JPS5316585A (en) 1978-02-15

Family

ID=14013595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9097876A Pending JPS5316585A (en) 1976-07-29 1976-07-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5316585A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132964U (en) * 1979-03-14 1980-09-20
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133978A (en) * 1974-09-18 1976-03-23 Hitachi Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133978A (en) * 1974-09-18 1976-03-23 Hitachi Ltd

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132964U (en) * 1979-03-14 1980-09-20
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same

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