KR880013279A - 반도체레이저 - Google Patents

반도체레이저 Download PDF

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Publication number
KR880013279A
KR880013279A KR1019880004381A KR880004381A KR880013279A KR 880013279 A KR880013279 A KR 880013279A KR 1019880004381 A KR1019880004381 A KR 1019880004381A KR 880004381 A KR880004381 A KR 880004381A KR 880013279 A KR880013279 A KR 880013279A
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KR
South Korea
Prior art keywords
semiconductor laser
layer
cladding layer
region
center
Prior art date
Application number
KR1019880004381A
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English (en)
Other versions
KR960009304B1 (en
Inventor
쇼지 히라타
Original Assignee
오가 노리오
소니 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시키가이샤 filed Critical 오가 노리오
Publication of KR880013279A publication Critical patent/KR880013279A/ko
Application granted granted Critical
Publication of KR960009304B1 publication Critical patent/KR960009304B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Abstract

내용 없음

Description

반도체레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 반도체레이저의 일예를 나타내는 약선적 확대단면도, 제2도는 제1도의 A-A선상의 단면도, 제3도는 본원 발명에 의한 반도체레이저의 다른 예를 나타내는 약선적 확대면적도.

Claims (1)

  1. 제1의 클래드층과 활성층과 가이드층과 제2의 클래드층을 가지는 반도체레이저에 있어서, 상기 가이드층의 중앙의 영역이 스트라이프형상으로 두껍게 형성되고, 또한 상기 제2의 클래드층이 상기 중앙에 대응하는 영역을 제외하고는 얇게 형성되어 이루어지는 반도체레이저.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR88004381A 1987-04-23 1988-04-18 Semiconductor laser devices KR960009304B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP87-100763 1987-04-23
JP62100763A JPS63265485A (ja) 1987-04-23 1987-04-23 半導体レ−ザ

Publications (2)

Publication Number Publication Date
KR880013279A true KR880013279A (ko) 1988-11-30
KR960009304B1 KR960009304B1 (en) 1996-07-18

Family

ID=14282545

Family Applications (1)

Application Number Title Priority Date Filing Date
KR88004381A KR960009304B1 (en) 1987-04-23 1988-04-18 Semiconductor laser devices

Country Status (6)

Country Link
US (1) US4888784A (ko)
EP (1) EP0288224B1 (ko)
JP (1) JPS63265485A (ko)
KR (1) KR960009304B1 (ko)
CA (1) CA1298641C (ko)
DE (1) DE3875273T2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2555197B2 (ja) * 1989-09-09 1996-11-20 三菱電機株式会社 半導体レーザ装置
US5329134A (en) * 1992-01-10 1994-07-12 International Business Machines Corporation Superluminescent diode having a quantum well and cavity length dependent threshold current
US5206877A (en) * 1992-02-18 1993-04-27 Eastman Kodak Company Distributed feedback laser diodes with selectively placed lossy sections
US5311539A (en) * 1992-11-25 1994-05-10 International Business Machines Corporation Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation
KR100345452B1 (ko) * 2000-12-14 2002-07-26 한국전자통신연구원 상부거울층 양단부에 확산영역을 구비하는 장파장표면방출 레이저 소자 및 그 제조 방법
US6600864B2 (en) * 2000-12-20 2003-07-29 Intel Corporation Method and apparatus for switching an optical beam using an optical rib waveguide
US7558307B2 (en) * 2004-02-16 2009-07-07 Sharp Kabushiki Kaisha Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system
JP4951267B2 (ja) * 2006-04-27 2012-06-13 日本オプネクスト株式会社 半導体レーザ素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5980984A (ja) * 1982-11-01 1984-05-10 Hitachi Ltd 面発光分布帰還形半導体レ−ザ素子
JPS59129486A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 半導体レーザ装置の製造方法
JPS60164383A (ja) * 1984-02-06 1985-08-27 Nec Corp 半導体レ−ザの製造方法
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser

Also Published As

Publication number Publication date
EP0288224B1 (en) 1992-10-14
EP0288224A2 (en) 1988-10-26
DE3875273T2 (de) 1993-04-08
JPS63265485A (ja) 1988-11-01
KR960009304B1 (en) 1996-07-18
US4888784A (en) 1989-12-19
CA1298641C (en) 1992-04-07
DE3875273D1 (de) 1992-11-19
EP0288224A3 (en) 1990-05-30

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