KR880013255A - 바이폴라트랜지스터 - Google Patents
바이폴라트랜지스터 Download PDFInfo
- Publication number
- KR880013255A KR880013255A KR1019880002429A KR880002429A KR880013255A KR 880013255 A KR880013255 A KR 880013255A KR 1019880002429 A KR1019880002429 A KR 1019880002429A KR 880002429 A KR880002429 A KR 880002429A KR 880013255 A KR880013255 A KR 880013255A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- bipolar transistor
- base extraction
- disposed
- element isolation
- Prior art date
Links
- 238000000605 extraction Methods 0.000 claims 3
- 238000002955 isolation Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본원 발명의 일실시예를 나타내는 개략 단면도, 제 2 도는 제 1 도의 실시예의 요부를 확대하여 나타낸 개략 단면도, 제 4 도는 본원 발명의 다른 실시예를 나타내는 개략 단면도.
Claims (1)
- 고농도의 베이스취출영역이 에미터영역과 소자분리영역과의 사이에 배설되고, 상기 베이스취출영역상에 베이스전극이 배설되어 이루어지는 바이폴라트랜지스터에 있어서, 동작시에, 상기 베이스취출영역과 상기 소자분리영역과의 사이에 걸치는 기판표면 근방에 공핍영역을 갖는 것을 특징으로 하는 바이폴라트랜지스터.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP87-88353 | 1987-04-10 | ||
| JP62088353A JPS63253664A (ja) | 1987-04-10 | 1987-04-10 | バイポ−ラトランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR880013255A true KR880013255A (ko) | 1988-11-30 |
| KR0118111B1 KR0118111B1 (ko) | 1997-09-30 |
Family
ID=13940455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880002429A KR0118111B1 (ko) | 1987-04-10 | 1988-03-09 | 바이폴라트랜지스터 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4984053A (ko) |
| EP (1) | EP0286117B1 (ko) |
| JP (1) | JPS63253664A (ko) |
| KR (1) | KR0118111B1 (ko) |
| CA (1) | CA1307357C (ko) |
| DE (1) | DE3882565T2 (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2579999B2 (ja) * | 1988-05-13 | 1997-02-12 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US5468989A (en) * | 1988-06-02 | 1995-11-21 | Hitachi, Ltd. | Semiconductor integrated circuit device having an improved vertical bipolar transistor structure |
| JP2861006B2 (ja) * | 1988-12-08 | 1999-02-24 | ソニー株式会社 | バイポーラトランジスタの製造方法 |
| DE69031784D1 (de) * | 1989-04-05 | 1998-01-22 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem Kollektorbereich, einem Basisbereich und einem Emitterbereich, und Verfahren zu deren Herstellung |
| US5221856A (en) * | 1989-04-05 | 1993-06-22 | U.S. Philips Corp. | Bipolar transistor with floating guard region under extrinsic base |
| US5410175A (en) * | 1989-08-31 | 1995-04-25 | Hamamatsu Photonics K.K. | Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate |
| JP2746289B2 (ja) * | 1989-09-09 | 1998-05-06 | 忠弘 大見 | 素子の作製方法並びに半導体素子およびその作製方法 |
| JP2825169B2 (ja) * | 1990-09-17 | 1998-11-18 | キヤノン株式会社 | 半導体装置 |
| US5302535A (en) * | 1991-09-20 | 1994-04-12 | Nec Corporation | Method of manufacturing high speed bipolar transistor |
| JPH0831841A (ja) | 1994-07-12 | 1996-02-02 | Sony Corp | 半導体装置及びその製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE27045E (en) * | 1963-11-08 | 1971-02-02 | Transistor with limited area base-collector junction | |
| US4003072A (en) * | 1972-04-20 | 1977-01-11 | Sony Corporation | Semiconductor device with high voltage breakdown resistance |
| NL185484C (nl) * | 1975-04-28 | 1990-04-17 | Philips Nv | Halfgeleiderinrichting met een halfgeleiderlichaam bevattende tenminste een transistor. |
| US4153904A (en) * | 1977-10-03 | 1979-05-08 | Texas Instruments Incorporated | Semiconductor device having a high breakdown voltage junction characteristic |
| CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
| US4868624A (en) * | 1980-05-09 | 1989-09-19 | Regents Of The University Of Minnesota | Channel collector transistor |
| JPS57201062A (en) * | 1981-06-05 | 1982-12-09 | Nec Corp | Semiconductor device |
| NL8302092A (nl) * | 1983-06-13 | 1985-01-02 | Philips Nv | Halfgeleiderinrichting bevattende een veldeffekttransistor. |
| JPS60247940A (ja) * | 1984-05-23 | 1985-12-07 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JPS6146063A (ja) * | 1984-08-10 | 1986-03-06 | Hitachi Ltd | 半導体装置の製造方法 |
| JPH0622238B2 (ja) * | 1985-10-02 | 1994-03-23 | 沖電気工業株式会社 | バイポ−ラ型半導体集積回路装置の製造方法 |
-
1987
- 1987-04-10 JP JP62088353A patent/JPS63253664A/ja active Pending
-
1988
- 1988-03-09 KR KR1019880002429A patent/KR0118111B1/ko not_active IP Right Cessation
- 1988-03-30 CA CA000562891A patent/CA1307357C/en not_active Expired - Lifetime
- 1988-03-30 US US07/175,263 patent/US4984053A/en not_active Expired - Lifetime
- 1988-04-08 DE DE88105630T patent/DE3882565T2/de not_active Expired - Lifetime
- 1988-04-08 EP EP88105630A patent/EP0286117B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0286117A1 (en) | 1988-10-12 |
| CA1307357C (en) | 1992-09-08 |
| DE3882565T2 (de) | 1994-02-24 |
| US4984053A (en) | 1991-01-08 |
| DE3882565D1 (de) | 1993-09-02 |
| JPS63253664A (ja) | 1988-10-20 |
| KR0118111B1 (ko) | 1997-09-30 |
| EP0286117B1 (en) | 1993-07-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20110706 Year of fee payment: 15 |
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| EXPY | Expiration of term |