KR910007159A - Mos형 반도체장치 - Google Patents
Mos형 반도체장치 Download PDFInfo
- Publication number
- KR910007159A KR910007159A KR1019900013909A KR900013909A KR910007159A KR 910007159 A KR910007159 A KR 910007159A KR 1019900013909 A KR1019900013909 A KR 1019900013909A KR 900013909 A KR900013909 A KR 900013909A KR 910007159 A KR910007159 A KR 910007159A
- Authority
- KR
- South Korea
- Prior art keywords
- melting point
- high melting
- point metal
- silicide layer
- metal silicide
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 230000008018 melting Effects 0.000 claims 12
- 238000002844 melting Methods 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 11
- 229910021332 silicide Inorganic materials 0.000 claims 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 MOS형 반도체장치의 단면도.
Claims (2)
- 반도체기판(11)의 게이트영역상에 게이트절연막(12)을 매개해서 설치된 고융점금속실리사이드층(13)과, 이 고융점금속실리사이드층(13)상에 설치된 고융점금속층(14)으로 구성된 게이트전극(16)을 구비하여 구성되고, 상기 고융점금속층(14)의 폭이 상기 고융점금속실리사이드층(13)의 폭보다 크게 되어 있는 것을 특징으로 하는 MOS형 반도체장치.
- 반도체기판(11)의 게이트영역상에 게이트절연막(12)을 매개해서 설치된 제1고융점금속실리사이드층(13)과, 이 제1고융점금속실리사이드층(13)상에 설치된 고융점금속층(14) 및 이 고융점금속층(14)상에 설치된 제2고융점실리사이드층(15)으로 구성된 게이트전극(16)을 구비하여 구성되고, 상기 고융점금속층(14)의 폭이 상기 제1고융점금속층실리사이드층(13)의 폭보다 크게 되어 있는 것을 특징으로 하는 MOS형 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-230642 | 1989-09-06 | ||
JP01-230642 | 1989-09-06 | ||
JP1230642A JP2695014B2 (ja) | 1989-09-06 | 1989-09-06 | Mos型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910007159A true KR910007159A (ko) | 1991-04-30 |
KR930011800B1 KR930011800B1 (ko) | 1993-12-21 |
Family
ID=16910987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900013909A KR930011800B1 (ko) | 1989-09-06 | 1990-09-04 | Mos형 반도체장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5115290A (ko) |
EP (1) | EP0417646B1 (ko) |
JP (1) | JP2695014B2 (ko) |
KR (1) | KR930011800B1 (ko) |
DE (1) | DE69027566T2 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2702338B2 (ja) * | 1991-10-14 | 1998-01-21 | 三菱電機株式会社 | 半導体装置、及びその製造方法 |
US5334545A (en) * | 1993-02-01 | 1994-08-02 | Allied Signal Inc. | Process for forming self-aligning cobalt silicide T-gates of silicon MOS devices |
KR0161380B1 (ko) * | 1994-12-28 | 1998-12-01 | 김광호 | 반도체장치의 트랜지스터 및 그 제조방법 |
US5858867A (en) * | 1996-05-20 | 1999-01-12 | Mosel Vitelic, Inc. | Method of making an inverse-T tungsten gate |
KR100207472B1 (ko) * | 1996-06-07 | 1999-07-15 | 윤종용 | 티타늄 질화막 적층 구조의 게이트 전극을 갖춘 반도체장치 및 그 제조 방법 |
US5981367A (en) * | 1996-10-17 | 1999-11-09 | Micron Technology, Inc. | Method for making an access transistor |
US5969394A (en) * | 1997-12-18 | 1999-10-19 | Advanced Micro Devices, Inc. | Method and structure for high aspect gate and short channel length insulated gate field effect transistors |
KR100430950B1 (ko) * | 1998-09-01 | 2004-06-16 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 및 그 제조방법 |
US6596598B1 (en) * | 2000-02-23 | 2003-07-22 | Advanced Micro Devices, Inc. | T-shaped gate device and method for making |
US7674697B2 (en) * | 2005-07-06 | 2010-03-09 | International Business Machines Corporation | MOSFET with multiple fully silicided gate and method for making the same |
US20090212332A1 (en) * | 2008-02-21 | 2009-08-27 | International Business Machines Corporation | Field effect transistor with reduced overlap capacitance |
US8541296B2 (en) * | 2011-09-01 | 2013-09-24 | The Institute of Microelectronics Chinese Academy of Science | Method of manufacturing dummy gates in gate last process |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5225582A (en) * | 1975-08-22 | 1977-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Production method of semiconductor device |
JPS5447489A (en) * | 1977-09-21 | 1979-04-14 | Hitachi Ltd | Production of mos semiconductor device |
US4319395A (en) * | 1979-06-28 | 1982-03-16 | Motorola, Inc. | Method of making self-aligned device |
JPS5685866A (en) * | 1979-12-14 | 1981-07-13 | Hitachi Ltd | Mos semiconductor device and manufacture thereof |
US4434013A (en) * | 1980-02-19 | 1984-02-28 | Xerox Corporation | Method of making a self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain |
JPS5933880A (ja) * | 1982-08-19 | 1984-02-23 | Nec Corp | 半導体装置の製造方法 |
JPS5984472A (ja) * | 1982-11-04 | 1984-05-16 | Nec Corp | Mos型半導体装置のゲ−ト電極配線 |
JPS6163058A (ja) * | 1984-09-05 | 1986-04-01 | Hitachi Ltd | Mos形電界効果トランジスタおよびその製造方法 |
JPH0697693B2 (ja) * | 1984-12-05 | 1994-11-30 | 株式会社東芝 | Mos型fetのゲート構造の製造方法 |
JPS61168264A (ja) * | 1985-01-21 | 1986-07-29 | Nec Corp | 金属ゲ−トmos型電界効果トランジスタの製造方法 |
JPS61206243A (ja) * | 1985-03-08 | 1986-09-12 | Mitsubishi Electric Corp | 高融点金属電極・配線膜を用いた半導体装置 |
US4843033A (en) * | 1985-09-27 | 1989-06-27 | Texas Instruments Incorporated | Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source |
JPS62105473A (ja) * | 1985-10-31 | 1987-05-15 | Mitsubishi Electric Corp | 半導体装置 |
US4735913A (en) * | 1986-05-06 | 1988-04-05 | Bell Communications Research, Inc. | Self-aligned fabrication process for GaAs MESFET devices |
JPS6344768A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 電界効果型トランジスタ及びその製造方法 |
US4849376A (en) * | 1987-01-12 | 1989-07-18 | Itt A Division Of Itt Corporation Gallium Arsenide Technology Center | Self-aligned refractory gate process with self-limiting undercut of an implant mask |
-
1989
- 1989-09-06 JP JP1230642A patent/JP2695014B2/ja not_active Expired - Fee Related
-
1990
- 1990-09-04 KR KR1019900013909A patent/KR930011800B1/ko not_active IP Right Cessation
- 1990-09-05 US US07/577,749 patent/US5115290A/en not_active Expired - Lifetime
- 1990-09-06 EP EP90117179A patent/EP0417646B1/en not_active Expired - Lifetime
- 1990-09-06 DE DE69027566T patent/DE69027566T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0417646A3 (en) | 1991-04-10 |
EP0417646A2 (en) | 1991-03-20 |
DE69027566T2 (de) | 1996-12-05 |
KR930011800B1 (ko) | 1993-12-21 |
JP2695014B2 (ja) | 1997-12-24 |
DE69027566D1 (de) | 1996-08-01 |
JPH0393271A (ja) | 1991-04-18 |
US5115290A (en) | 1992-05-19 |
EP0417646B1 (en) | 1996-06-26 |
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E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20051130 Year of fee payment: 13 |
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LAPS | Lapse due to unpaid annual fee |