KR900005561A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR900005561A KR900005561A KR1019890013912A KR890013912A KR900005561A KR 900005561 A KR900005561 A KR 900005561A KR 1019890013912 A KR1019890013912 A KR 1019890013912A KR 890013912 A KR890013912 A KR 890013912A KR 900005561 A KR900005561 A KR 900005561A
- Authority
- KR
- South Korea
- Prior art keywords
- guard ring
- wiring layer
- substrate
- semiconductor device
- insulating film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a도는 본 발명의 1실시예의 패턴 평면도,
제1b도는 제1a도를 B-B선으로 자른 단면도,
제2도는 실시예의 효과를 설명하기 위한 특성도,
Claims (2)
- 고내압소자를 형성하는 반도체기판(7)과, 이 기판(7)에 설치되며 그 전도형이 기판(7)과 같으면서 불순물농도는 높은 가드링(2), 이 가드링(2) 위를 지나는 배선층(1)을 갖추고, 그중 상기 배선층(1)이 지나는 부분(21)에서의 상기 가드링(2)위의 절연막(81) 두께는 소자영역의 게이트절연막(8)두께 보다 두껍게 되어 있으며, 상기 가드링(2)중 상기 배선층(1)이 지나는 부분(21)의 불순물농도는 다른 부분(22)보다 높게 되어 있는 것을 특징으로 하는 반도체장치.
- 제1항에 있어서, 상기 배선층(1)이 폴리실리콘으로 이루어져 있는 것을 특징으로 하는 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-241501 | 1988-09-27 | ||
JP63241501A JPH0691250B2 (ja) | 1988-09-27 | 1988-09-27 | 半導体装置 |
JP88-241501 | 1988-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900005561A true KR900005561A (ko) | 1990-04-14 |
KR920009980B1 KR920009980B1 (ko) | 1992-11-09 |
Family
ID=17075265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890013912A KR920009980B1 (ko) | 1988-09-27 | 1989-09-27 | 반도체장치 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0360998B1 (ko) |
JP (1) | JPH0691250B2 (ko) |
KR (1) | KR920009980B1 (ko) |
DE (1) | DE68911815T2 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3143592B2 (ja) * | 1995-09-14 | 2001-03-07 | キヤノン株式会社 | 表示装置 |
JP3689505B2 (ja) * | 1995-11-01 | 2005-08-31 | キヤノン株式会社 | 半導体装置の作製方法 |
JP2019096839A (ja) * | 2017-11-28 | 2019-06-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1131675A (en) * | 1966-07-11 | 1968-10-23 | Hitachi Ltd | Semiconductor device |
GB1312299A (en) * | 1969-08-04 | 1973-04-04 | Matsushita Electronics Corp | Insulated gate semiconductor device |
JPS59215742A (ja) * | 1983-05-24 | 1984-12-05 | Toshiba Corp | 半導体装置 |
-
1988
- 1988-09-27 JP JP63241501A patent/JPH0691250B2/ja not_active Expired - Fee Related
-
1989
- 1989-07-19 DE DE68911815T patent/DE68911815T2/de not_active Expired - Fee Related
- 1989-07-19 EP EP89113245A patent/EP0360998B1/en not_active Expired - Lifetime
- 1989-09-27 KR KR1019890013912A patent/KR920009980B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE68911815T2 (de) | 1994-06-09 |
EP0360998A2 (en) | 1990-04-04 |
EP0360998B1 (en) | 1993-12-29 |
KR920009980B1 (ko) | 1992-11-09 |
EP0360998A3 (en) | 1990-06-06 |
DE68911815D1 (de) | 1994-02-10 |
JPH0691250B2 (ja) | 1994-11-14 |
JPH0289371A (ja) | 1990-03-29 |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20081027 Year of fee payment: 17 |
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EXPY | Expiration of term |