KR910017676A - 박막트랜지스터 - Google Patents

박막트랜지스터 Download PDF

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Publication number
KR910017676A
KR910017676A KR1019910004740A KR910004740A KR910017676A KR 910017676 A KR910017676 A KR 910017676A KR 1019910004740 A KR1019910004740 A KR 1019910004740A KR 910004740 A KR910004740 A KR 910004740A KR 910017676 A KR910017676 A KR 910017676A
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South Korea
Prior art keywords
thin film
film transistor
active layer
auxiliary
silicon
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KR1019910004740A
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English (en)
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KR940004420B1 (ko
Inventor
마사토 히라마츠
다카아키 가미무라
미츠오 나카지마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910017676A publication Critical patent/KR910017676A/ko
Application granted granted Critical
Publication of KR940004420B1 publication Critical patent/KR940004420B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors

Abstract

내용 없음

Description

박막트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 제 1 실시예에 관한 박막 트랜지스터의 단면도, 제 2A~E도는 제 1 도에 도시한 박막트랜지스터에 제조공정 단면도.

Claims (10)

  1. 실리콘활성층(5)과, 이 실리콘활성층(5)의 소스영역 및 드레인영역의표면에 형성되모가 더불어 질소 도핑된 실리콘막으로 구성되는 보조막수단, 이 보조막수단에 접속되는 소스오믹접속층 및 드레인오믹접속층, 각 오믹접속층(8)에 접속되는 소스전극(9) 및 드레인전극(10) 및, 상기 실리콘활성층(5)의 채널영역과 게이트절연막을 통해서 대향하는 게이트전극을 구비하여 구성된 것을 특징으로 하는 박막트랜지스터.
  2. 제 1항에 있어서, 상기 보조막수단의 질소농도가 5×1017atoms/cc 내지 1×1020atoms/cc인 것을 특징으로 하는 박막트랜지스터.
  3. 제 1항에 있어서, 상기 보조막수단과 실질적으로 동일한 조성의 보조막수단이 상기 활성층의 채널영역의 표면에도 형성되고, 이것이 상기 활성층의 소스영역 및 드레인영역의 상기 보조막수단과 일체적으로 형성되어지는 것을 특징으로 하는 박막트랜지스터.
  4. 제 1항에 있어서, 상기 보조막수단과 상기 활성층의 소스영역과 드레인영역으로 분리되어 형성되는 것을 특징으로 하는 박막트랜지스터.
  5. 제 1항에 있어서, 상기 활성층이 마이크로 크리스탈실리콘으로 형성되는 것을 특징으로 하는 박막트랜지스터.
  6. 제 1항에 있어서, 상기 활성층이 비결정실리콘으로 형성되는 것을 특징으로 하는 박막트랜지스터.
  7. 제 3항에 있어서, 상기 박막트랜지스터가 역스태거형 트랜지스터인 것을 특징으로 하는 박막트랜지스터.
  8. 제 1항에 있어서, 상기 활성층의 채널영역의 상기 보조막수단을 피복하는 실리콘산화막을 추가로 포함하여 구성된 것을 특징으로 하는 박막트랜지스터.
  9. 제 3항에 있어서, 상기 박막트랜지스터가 동일 평면형 트랜지스터인 것을 특징으로 하는 박막트랜지스터.
  10. 제 4항에 있어서, 상기 박막트랜지스터가 스태거형 트랜지스터인 것을 특징으로 하는 박막트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910004740A 1990-03-27 1991-03-27 박막트랜지스터 KR940004420B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2-77385 1990-03-27
JP02-077385 1990-03-27
JP7738590 1990-03-27
JP02-215491 1990-08-15
JP2215491A JPH03278466A (ja) 1990-03-27 1990-08-15 薄膜トランジスタおよびその製造方法
JP2-215491 1990-08-15

Publications (2)

Publication Number Publication Date
KR910017676A true KR910017676A (ko) 1991-11-05
KR940004420B1 KR940004420B1 (ko) 1994-05-25

Family

ID=13632424

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910004740A KR940004420B1 (ko) 1990-03-27 1991-03-27 박막트랜지스터

Country Status (3)

Country Link
US (1) US5311040A (ko)
JP (1) JPH03278466A (ko)
KR (1) KR940004420B1 (ko)

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KR20110023888A (ko) * 2008-06-27 2011-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
KR20110126745A (ko) * 2009-03-09 2011-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터

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KR20110126745A (ko) * 2009-03-09 2011-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터

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Publication number Publication date
JPH03278466A (ja) 1991-12-10
US5311040A (en) 1994-05-10
KR940004420B1 (ko) 1994-05-25

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