KR950007022A - 개선된 소오스-하이 성능을 갖는 실리콘 절연체의 트랜지스터 - Google Patents

개선된 소오스-하이 성능을 갖는 실리콘 절연체의 트랜지스터 Download PDF

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KR950007022A
KR950007022A KR1019940019445A KR19940019445A KR950007022A KR 950007022 A KR950007022 A KR 950007022A KR 1019940019445 A KR1019940019445 A KR 1019940019445A KR 19940019445 A KR19940019445 A KR 19940019445A KR 950007022 A KR950007022 A KR 950007022A
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drift region
silicon
silicon layer
layer
region
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KR100348668B1 (ko
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엘. 머천트 스티븐
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제이.에프.에. 페닝
필립스 일렉트로닉스 엔.브이.
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Abstract

본 발명은 브릿지형 회로용으로 개선된 소오스-하이성능을 갖는 박막 실리콘 SOI 장치에 관한 것이다. 본 장치는 소오스-하이 작동중에 순방향 전류 포화를 방지하며, 길이의 1/3 내지 2/3로 두께를 감소시키면서 얇은 부분과 두꺼운 부분 모두를 갖는 트랜지스터의 드리프트 영역을 제공함으로써 제조된다. 또한 게이트 전극을 분리시키고 드리프트 영역의 얇은 부분위로 연장하는 필드 플레이트가 제공된다. 게이트 전극과 필드 플레이트는 금속 접속부에 의하여 단락된다.

Description

개선된 소오스-하이 성능을 갖는 실리콘 절연체의 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 개선된 장치의 단면도,
3A도 및 제3B도는 제1도의 장치와 제2도의 본 발명에 따른 장치의 역특성의 비교예.

Claims (5)

  1. 매입 절연층과, 상기 매입 절연층상에 있으며 측방향으로 연장하는 드리프트 영역을 갖는 실리콘층과 상기 실리콘층상에 있는 상부 절연층과, 상기 드리프트 영역의 한단부에서 실리콘층위에 게이트 전극을 갖는 게이트 영역과, 상기 드리프트 영역의 대향 단부에 있는 드레인 영역 및, 상기 게이트 영역으로부터 측방향으로 분리되어 있는 소오스 영역을 포함하는 박막 실리콘 절연체 장치에 있어서, 상기 드리프트 영역은 두꺼운 부분과 얇은 부분 모두를 구비하는 것을 특징으로 하는 박막 실리콘 절연체 장치.
  2. 제1항에 있어서, 상기 드리프트 영역은 측방향 선형 도핑 영역을 구비하고, 상기 얇은 부분은 드리프트 영역의 길이 중 1/3 내지 2/3 길이에 걸쳐 연장하며, 상기 상부 절연층위에는 필드 플레이트(field plate)가 제공되어 있으며, 이것은 게이트 전극과 단락되어 있고 상기 얇은 부분위로 연장하는 것을 특징으로 하는 박막 실리콘 절연체 장치.
  3. 제1항에 있어서, 상기 얇은 부분은 0.1 내지 0.4㎛의 두께를 갖는 것을 특징으로 하는 박막 실리콘 절연체 장치.
  4. 제1항에 있어서, 상기 실리콘층은 얇은 부분에 인접한 드리프트 영역에 약 1 내지 2㎛의 두께를 갖는 것을 특징으로 하는 박막 실리콘 절연체 장치.
  5. 기판상에 있는 매입 산화물층상에 실리콘층을 형성시키는 단계와, 상기 실리콘층의 일부를 얇게 하는 단계와, 상기 실리콘층위에 산화물층을 형성하는 단계와, 상기 부분이 결여되어 있는 실리콘층상에 게이트 전극을 제공하는 단계와, 상기 산화물층상에 있는 상기 부분위로 필드 플레이트를 연장시키는 단계 및, 상기 게이트 전극과 필드 플레이트를 단락시키는 단계를 포함하는 것을 특징으로 하는 박막 실리콘 절연체 장치 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940019445A 1993-08-10 1994-08-08 박막soi장치및그제조방법 KR100348668B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/105,213 US5362979A (en) 1991-02-01 1993-08-10 SOI transistor with improved source-high performance
US105,213 1993-08-10

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KR950007022A true KR950007022A (ko) 1995-03-21
KR100348668B1 KR100348668B1 (ko) 2002-11-23

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US (1) US5362979A (ko)
EP (1) EP0638938B1 (ko)
JP (1) JP3871352B2 (ko)
KR (1) KR100348668B1 (ko)
DE (1) DE69408605T2 (ko)

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KR100847990B1 (ko) * 2001-02-27 2008-07-22 엔엑스피 비 브이 횡형 박막 ｓｏｉ 디바이스 및 이 디바이스에서의 에너지 소모 감소 방법

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EP0638938B1 (en) 1998-02-25
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US5362979A (en) 1994-11-08
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