KR950007022A - 개선된 소오스-하이 성능을 갖는 실리콘 절연체의 트랜지스터 - Google Patents

개선된 소오스-하이 성능을 갖는 실리콘 절연체의 트랜지스터 Download PDF

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KR950007022A
KR950007022A KR1019940019445A KR19940019445A KR950007022A KR 950007022 A KR950007022 A KR 950007022A KR 1019940019445 A KR1019940019445 A KR 1019940019445A KR 19940019445 A KR19940019445 A KR 19940019445A KR 950007022 A KR950007022 A KR 950007022A
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drift region
silicon
silicon layer
layer
region
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KR100348668B1 (ko
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엘. 머천트 스티븐
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제이.에프.에. 페닝
필립스 일렉트로닉스 엔.브이.
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Abstract

본 발명은 브릿지형 회로용으로 개선된 소오스-하이성능을 갖는 박막 실리콘 SOI 장치에 관한 것이다. 본 장치는 소오스-하이 작동중에 순방향 전류 포화를 방지하며, 길이의 1/3 내지 2/3로 두께를 감소시키면서 얇은 부분과 두꺼운 부분 모두를 갖는 트랜지스터의 드리프트 영역을 제공함으로써 제조된다. 또한 게이트 전극을 분리시키고 드리프트 영역의 얇은 부분위로 연장하는 필드 플레이트가 제공된다. 게이트 전극과 필드 플레이트는 금속 접속부에 의하여 단락된다.

Description

개선된 소오스-하이 성능을 갖는 실리콘 절연체의 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 개선된 장치의 단면도,
3A도 및 제3B도는 제1도의 장치와 제2도의 본 발명에 따른 장치의 역특성의 비교예.

Claims (5)

  1. 매입 절연층과, 상기 매입 절연층상에 있으며 측방향으로 연장하는 드리프트 영역을 갖는 실리콘층과 상기 실리콘층상에 있는 상부 절연층과, 상기 드리프트 영역의 한단부에서 실리콘층위에 게이트 전극을 갖는 게이트 영역과, 상기 드리프트 영역의 대향 단부에 있는 드레인 영역 및, 상기 게이트 영역으로부터 측방향으로 분리되어 있는 소오스 영역을 포함하는 박막 실리콘 절연체 장치에 있어서, 상기 드리프트 영역은 두꺼운 부분과 얇은 부분 모두를 구비하는 것을 특징으로 하는 박막 실리콘 절연체 장치.
  2. 제1항에 있어서, 상기 드리프트 영역은 측방향 선형 도핑 영역을 구비하고, 상기 얇은 부분은 드리프트 영역의 길이 중 1/3 내지 2/3 길이에 걸쳐 연장하며, 상기 상부 절연층위에는 필드 플레이트(field plate)가 제공되어 있으며, 이것은 게이트 전극과 단락되어 있고 상기 얇은 부분위로 연장하는 것을 특징으로 하는 박막 실리콘 절연체 장치.
  3. 제1항에 있어서, 상기 얇은 부분은 0.1 내지 0.4㎛의 두께를 갖는 것을 특징으로 하는 박막 실리콘 절연체 장치.
  4. 제1항에 있어서, 상기 실리콘층은 얇은 부분에 인접한 드리프트 영역에 약 1 내지 2㎛의 두께를 갖는 것을 특징으로 하는 박막 실리콘 절연체 장치.
  5. 기판상에 있는 매입 산화물층상에 실리콘층을 형성시키는 단계와, 상기 실리콘층의 일부를 얇게 하는 단계와, 상기 실리콘층위에 산화물층을 형성하는 단계와, 상기 부분이 결여되어 있는 실리콘층상에 게이트 전극을 제공하는 단계와, 상기 산화물층상에 있는 상기 부분위로 필드 플레이트를 연장시키는 단계 및, 상기 게이트 전극과 필드 플레이트를 단락시키는 단계를 포함하는 것을 특징으로 하는 박막 실리콘 절연체 장치 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940019445A 1993-08-10 1994-08-08 박막soi장치및그제조방법 KR100348668B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/105,213 US5362979A (en) 1991-02-01 1993-08-10 SOI transistor with improved source-high performance
US105,213 1993-08-10

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KR950007022A true KR950007022A (ko) 1995-03-21
KR100348668B1 KR100348668B1 (ko) 2002-11-23

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US (1) US5362979A (ko)
EP (1) EP0638938B1 (ko)
JP (1) JP3871352B2 (ko)
KR (1) KR100348668B1 (ko)
DE (1) DE69408605T2 (ko)

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KR100847990B1 (ko) * 2001-02-27 2008-07-22 엔엑스피 비 브이 횡형 박막 ｓｏｉ 디바이스 및 이 디바이스에서의 에너지 소모 감소 방법

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2654268B2 (ja) * 1991-05-13 1997-09-17 株式会社東芝 半導体装置の使用方法
US5648671A (en) * 1995-12-13 1997-07-15 U S Philips Corporation Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile
TW360982B (en) * 1996-01-26 1999-06-11 Matsushita Electric Works Ltd Thin film transistor of silicon-on-insulator type
US5710451A (en) * 1996-04-10 1998-01-20 Philips Electronics North America Corporation High-voltage lateral MOSFET SOI device having a semiconductor linkup region
SE513284C2 (sv) * 1996-07-26 2000-08-14 Ericsson Telefon Ab L M Halvledarkomponent med linjär ström-till-spänningskarasterik
US5912490A (en) * 1997-08-04 1999-06-15 Spectrian MOSFET having buried shield plate for reduced gate/drain capacitance
US6346451B1 (en) 1997-12-24 2002-02-12 Philips Electronics North America Corporation Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode
DE19800647C1 (de) * 1998-01-09 1999-05-27 Siemens Ag SOI-Hochspannungsschalter
US5969387A (en) * 1998-06-19 1999-10-19 Philips Electronics North America Corporation Lateral thin-film SOI devices with graded top oxide and graded drift region
US6621121B2 (en) 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US6545316B1 (en) 2000-06-23 2003-04-08 Silicon Wireless Corporation MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same
US6191453B1 (en) * 1999-12-13 2001-02-20 Philips Electronics North America Corporation Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology
US7277402B2 (en) * 2000-01-27 2007-10-02 Thomson Licensing Method for isochronous resource management in a network based on hiperlan 2 technology
US6781194B2 (en) * 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
US6784486B2 (en) * 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
GB0107405D0 (en) * 2001-03-23 2001-05-16 Koninkl Philips Electronics Nv Field effect transistor structure and method of manufacture
JP4198469B2 (ja) * 2001-04-11 2008-12-17 シリコン・セミコンダクター・コーポレイション パワーデバイスとその製造方法
GB0126215D0 (en) * 2001-11-01 2002-01-02 Koninkl Philips Electronics Nv Field effect transistor on insulating layer and manufacturing method
US20040262685A1 (en) * 2001-11-01 2004-12-30 Zingg Rene Paul Thin film lateral soi power device
US6847081B2 (en) * 2001-12-10 2005-01-25 Koninklijke Philips Electronics N.V. Dual gate oxide high-voltage semiconductor device
US20050274985A1 (en) * 2004-05-26 2005-12-15 Adlerstein Michael G RF decoupled field plate for FETs
US7829400B2 (en) * 2005-01-12 2010-11-09 Sharp Kabushiki Kaisha Semiconductor device fabrication method and semiconductor device
JP4282625B2 (ja) * 2005-03-10 2009-06-24 株式会社東芝 半導体装置及びその製造方法
TWI387106B (zh) * 2008-10-16 2013-02-21 Vanguard Int Semiconduct Corp 閘極絕緣雙接面電晶體（ｉｇｂｔ）靜電放電防護元件
US8049307B2 (en) 2009-01-23 2011-11-01 Vanguard International Semiconductor Corporation Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices
US10529866B2 (en) * 2012-05-30 2020-01-07 X-Fab Semiconductor Foundries Gmbh Semiconductor device
JP6327747B2 (ja) * 2014-04-23 2018-05-23 株式会社 日立パワーデバイス 半導体装置
US9590053B2 (en) 2014-11-25 2017-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Methodology and structure for field plate design
US10756208B2 (en) 2014-11-25 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated chip and method of forming the same
US11164970B2 (en) 2014-11-25 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Contact field plate
KR102286013B1 (ko) * 2015-10-07 2021-08-05 에스케이하이닉스 시스템아이씨 주식회사 트랜치 절연 필드플레이트 및 금속 필드플레이트를 갖는 수평형 고전압 집적소자
US11195915B2 (en) * 2019-04-15 2021-12-07 Texas Instruments Incorporated Semiconductor devices with a sloped surface
US11876118B2 (en) * 2020-02-14 2024-01-16 Vanguard International Semiconductor Corporation Semiconductor structure with gate metal layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619673A (en) * 1979-07-27 1981-02-24 Nec Corp Manufacture of high voltage withsanding mos transistor
JPS5710266A (en) * 1980-06-23 1982-01-19 Fujitsu Ltd Mis field effect semiconductor device
JPS57126131A (en) * 1981-01-28 1982-08-05 Toshiba Corp Manufacture of semiconductor device
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
JPS5978557A (ja) * 1982-10-27 1984-05-07 Toshiba Corp 相補型ｍｏｓ半導体装置の製造方法
JPS6376379A (ja) * 1986-09-18 1988-04-06 Fujitsu Ltd Ｍｉｓ型半導体装置
JPH03119733A (ja) * 1989-10-02 1991-05-22 Fujitsu Ltd 高耐電圧半導体装置
US5246870A (en) * 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100847990B1 (ko) * 2001-02-27 2008-07-22 엔엑스피 비 브이 횡형 박막 ｓｏｉ 디바이스 및 이 디바이스에서의 에너지 소모 감소 방법

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US5362979A (en) 1994-11-08
KR100348668B1 (ko) 2002-11-23
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EP0638938A3 (en) 1995-05-03

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