KR960015962A - 박막트랜지스터 - Google Patents

박막트랜지스터 Download PDF

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Publication number
KR960015962A
KR960015962A KR1019950035061A KR19950035061A KR960015962A KR 960015962 A KR960015962 A KR 960015962A KR 1019950035061 A KR1019950035061 A KR 1019950035061A KR 19950035061 A KR19950035061 A KR 19950035061A KR 960015962 A KR960015962 A KR 960015962A
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KR
South Korea
Prior art keywords
semiconductor layer
layer
electrode
thin film
film transistor
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KR1019950035061A
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English (en)
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KR100294350B1 (ko
Inventor
히로유끼 헤비구찌
Original Assignee
아베 아끼라
가부시키가이샤 프론테크
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Publication of KR960015962A publication Critical patent/KR960015962A/ko
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Publication of KR100294350B1 publication Critical patent/KR100294350B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

본 발명의 목적은 반도체층에 빛이 입사하지 않는 구조로 하여 반도체층의 누실전류를 억제하고, 박막트랜지스터의 오프전류를 낮게 할 수 있는 박막트랜지스터를 제공하는데 있다.
기판(14)상에 게이트전극(30)이 형성되고, 기판상면과 게이트전극을 덮고 게이트형성된층(16)이 형성되고, 게이트형성된층상에 반도체층(36)이 형성되고, 반도체층상에 이격되어 대향상태에서 소스전극(34) 및 드레인전극(32)이 형성되어 이루어지고, 상기 게이트전극이 반도체층보다 넓게 형성되고, 상기 게이트절연층상이고 반도제층의 근방에는 소스전극 및 또는 드레인전극이 형성되어 있지 않은 것을 특징으로 한다.

Description

박막트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 실시예의 박막트랜지스터의 측단면도이고,
제2도는 본 실시예의 박막트랜지스터의 게이트전압과 드레인전압의 관제를 나타내는 그래프이다.

Claims (3)

  1. 기판상에 게이트전극이 형성되고, 기판상면과 게이트전극을 덮어 게이트형성된층이 형성되고, 상기 게이트형성된층상에 반도체층이 형성되고, 상기 반도체층상에 대향상태로 이격되어 있는 소스전극 및 드레인전극이 형성되어 이루어지고, 상기 게이트전극이 반도체층보다 넓게 형성되고, 상기 게이트절연층상에서 반도체층 근방에는 소스전극 및/또는 드레인전극이 형성되어 있지 않은 것을 특징으로 하는 박막트랜지스터.
  2. 제1형에 있어이, 상기 소스전극 및/또는 상기 드레인전극과 상기 반보체용 사이에, 오믹콘택트층이 형성되어 있는 것을 특징으로 하는 박막트랜지스터.
  3. 제1항 또는 제2항에 있어서, 상기 기판의 하방에 백라이트가 부설되어 있는 것을 특징으로 하는 박막트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950035061A 1994-10-13 1995-10-12 박막트랜지스터 및 액정표시장치 KR100294350B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6248184A JP3002099B2 (ja) 1994-10-13 1994-10-13 薄膜トランジスタおよびそれを用いた液晶表示装置
JP94-248184 1994-10-13

Publications (2)

Publication Number Publication Date
KR960015962A true KR960015962A (ko) 1996-05-22
KR100294350B1 KR100294350B1 (ko) 2001-09-17

Family

ID=17174458

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950035061A KR100294350B1 (ko) 1994-10-13 1995-10-12 박막트랜지스터 및 액정표시장치

Country Status (4)

Country Link
US (1) US5598012A (ko)
JP (1) JP3002099B2 (ko)
KR (1) KR100294350B1 (ko)
DE (1) DE19538050C2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101708906B1 (ko) 2016-10-05 2017-02-21 배진철 의자용 받침대 및 그를 구비하는 의자

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* Cited by examiner, † Cited by third party
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US5835177A (en) * 1995-10-05 1998-11-10 Kabushiki Kaisha Toshiba Array substrate with bus lines takeout/terminal sections having multiple conductive layers
US5808317A (en) * 1996-07-24 1998-09-15 International Business Machines Corporation Split-gate, horizontally redundant, and self-aligned thin film transistors
KR100230595B1 (ko) * 1996-12-28 1999-11-15 김영환 액정 표시 장치 및 그 제조방법
JP3883641B2 (ja) * 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP2002368228A (ja) * 2001-06-13 2002-12-20 Matsushita Electric Ind Co Ltd 液晶表示装置とその駆動方法
US20030120539A1 (en) * 2001-12-24 2003-06-26 Nicolas Kourim System for monitoring and analyzing the performance of information systems and their impact on business processes
JP4604440B2 (ja) * 2002-02-22 2011-01-05 日本電気株式会社 チャネルエッチ型薄膜トランジスタ
JP4551049B2 (ja) * 2002-03-19 2010-09-22 三菱電機株式会社 表示装置
KR20040006555A (ko) * 2002-07-12 2004-01-24 삼성전자주식회사 액정 표시 장치
US8681140B2 (en) * 2004-05-21 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus having the same
KR100703467B1 (ko) * 2005-01-07 2007-04-03 삼성에스디아이 주식회사 박막트랜지스터
KR101152528B1 (ko) 2005-06-27 2012-06-01 엘지디스플레이 주식회사 누설전류를 줄일 수 있는 액정표시소자 및 그 제조방법
JP5023465B2 (ja) * 2005-10-20 2012-09-12 カシオ計算機株式会社 薄膜トランジスタパネル
TWI275184B (en) * 2006-05-18 2007-03-01 Au Optronics Corp Thin film transistor and fabrication method thereof
KR101409704B1 (ko) * 2006-12-26 2014-06-19 엘지디스플레이 주식회사 액정표시장치 및 그 제조 방법
JP2009071289A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR101367129B1 (ko) * 2008-07-08 2014-02-25 삼성전자주식회사 씬 필름 트랜지스터 및 그 제조 방법
JP5615605B2 (ja) * 2010-07-05 2014-10-29 三菱電機株式会社 Ｆｆｓモード液晶装置
JP2012053372A (ja) * 2010-09-03 2012-03-15 Hitachi Displays Ltd 液晶表示装置
JP2019050394A (ja) * 2018-10-31 2019-03-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
CN110400811B (zh) 2019-08-30 2021-12-17 合肥鑫晟光电科技有限公司 阵列基板和显示装置

Family Cites Families (5)

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JPS61203484A (ja) * 1985-03-06 1986-09-09 株式会社東芝 表示装置用駆動回路基板及びその製造方法
JPS62209514A (ja) * 1986-03-11 1987-09-14 Seiko Epson Corp アクテイブマトリクス基板
JP2672524B2 (ja) * 1987-10-02 1997-11-05 株式会社日立製作所 薄膜トランジスタ
JPH01217423A (ja) * 1988-02-26 1989-08-31 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタアレイ基板
US5355002A (en) * 1993-01-19 1994-10-11 Industrial Technology Research Institute Structure of high yield thin film transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101708906B1 (ko) 2016-10-05 2017-02-21 배진철 의자용 받침대 및 그를 구비하는 의자

Also Published As

Publication number Publication date
DE19538050A1 (de) 1996-04-18
JPH08116062A (ja) 1996-05-07
KR100294350B1 (ko) 2001-09-17
US5598012A (en) 1997-01-28
DE19538050C2 (de) 2003-12-11
JP3002099B2 (ja) 2000-01-24

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