KR970030914A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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KR970030914A
KR970030914A KR1019960059386A KR19960059386A KR970030914A KR 970030914 A KR970030914 A KR 970030914A KR 1019960059386 A KR1019960059386 A KR 1019960059386A KR 19960059386 A KR19960059386 A KR 19960059386A KR 970030914 A KR970030914 A KR 970030914A
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thin film
impurity region
concentration impurity
driving circuit
semiconductor
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KR1019960059386A
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마스미쯔 이노
도시까즈 마에까와
유끼 다시로
야스시 시모가이찌
신따로 모리따
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이데이 노부유끼
소니 가부시끼가이샤
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Publication of KR970030914A publication Critical patent/KR970030914A/ko

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Shift Register Type Memory (AREA)

Abstract

표시용 반도체 장치에 내장되는 구동 회로를 구성하는 박막 트랜지스터의 특성 열화를 방지한다.
반도체 장치는 화소 전극의 집합과, 화소 전극을 각각 구동하는 스위칭 소자의 집합과, 이 스위칭 소자를 구동시키는 구동 회로가 절연 기판(1) 상에 집적 형성된 것이다. 스위칭 소자 및 구동 회로는 박막 트랜지스터(0)로 구성되어 있다. 박막 트랜지스터(0)는 보텀 게이트 구조를 갖고, 절연 기판(1)에 패터닝 형성된 게이트 전극(2)과, 이것을 피복하는 게이트 절연막(3)과, 그 위에 형성된 반도체 박막(4)을 구비하고 있다. 반도체 박막(4)에는 채널 영역(5) 및 드레인(D)/소스(S)로 이루어지는 고농도 불순물 영역(6)이 형성되어 있다. 구동 회로에 속하는 박막 트랜지스터(0)는 드래인 (D)측의 고농도 불순물 영역(6)과 채널 영역(5) 사이에 저농도 불순물 영역(7)이 형성되어 있다. 이 저농도 불순물 영역(7)은 드레인 단( 端 )의 전계 집중을 완화하여 반도체 박막(4)의 상하에 접하는 층간 절연막(8, 9) 및 게이트절연막(6)에 발생하는 유해한 전하를 억제한다.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도1은 본 발명에 의한 반도체 장치를 도시한 모식적인 단면도.

Claims (4)

  1. 화소 전극의 집합과, 화소 전극을 개별적으로 구동하는 스위치 소자의 집합과, 상기 스위칭 소자를 동작시키는 구동 회로가 절연 기판상에 집적 형성된 반도체 장치에 있어서, 상기 스위칭 소자 및 구동 회로는 박막 트랜지스터로 구성되어 있고, 상기 박막 트랜지스터는 절연 기판에 패터닝 형성된 게이트 전극과, 이것을 피복하는 게이트 절연막과, 그 위에 성막되어 채널 영역 및 드레인/소스로 이루어진 고농도 불순물 영역이 형성되는 반도체 박막을 구비한 보텀(bottom) 게이트 구조를 갖고, 적어도 상기 구동 회로에 속하는 박막 트랜지스터는 적어도 드레인측의 고농도 불순물 영역과 채널 영역과의 사이에 저농도 불순물 영역이 형성되어 있는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 반도체 박막은 레이저 광의 조사에 의해 재결정화 한 다결정 실리콘으로 이루어지는 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 저농도 불순물 영역은 드레인 단(端)의 전계 집중을 완하하여 상기 반도체 박막의 상하(上下)에 접하는 층간 절연막 및 게이트 절연막에 발생하는 전하를 억제하는 것을 특징으로 하는 반도체 장치.
  4. 소정의 간극을 통하여 서로 접합된 1쌍의 절연 기판과, 상기 간극에 보존된 전기 광학 물질을 구비한 패널 구조를 갖고, 한쪽 절연 기판에는 대향 전극이 형성되고, 다른 쪽 절연 기판에는 화소 전극의 집합과, 화소 전극을 개별적으로 구동하는 스위칭 소자의 집합과, 상기 스위칭 소자를 동작시키는 구동 회로가 집적 형성된 전기 광학 장치에 잇어서, 상기 스위칭 소자 및 구동 회로는 박막 트랜지스터로 구성되어 있고, 상기 박막 트랜지스터는 절연 기판에 패터닝 형성된 게이트 전극과, 이것을 피복하는 게이트 절연막과, 그 위에 성막되어 채널 영역 및 드레인/소스로 이루어진 고농도 불순물 영역이 형성되는 반도체 박막을 구비한 보텀 게이트 구조를 갖고, 적어도 상기 구동 회로에 속하는 박막 트랜지스터는 적어도 드레인측의 고농도 불순물 영역과 채널 영역과의 사이에 저농도 불순물 영역이 형성되어 있는 것을 특징으로 하는 전기 광학 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960059386A 1995-11-30 1996-11-29 반도체 장치 KR970030914A (ko)

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JP95-335772 1995-11-30
JP33577295A JPH09153624A (ja) 1995-11-30 1995-11-30 半導体装置

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JPH05183164A (ja) * 1991-12-28 1993-07-23 Nec Corp 半導体素子
JP3378280B2 (ja) * 1992-11-27 2003-02-17 株式会社東芝 薄膜トランジスタおよびその製造方法
JP3157985B2 (ja) * 1993-06-10 2001-04-23 三菱電機株式会社 薄膜トランジスタおよびその製造方法
KR970010685B1 (ko) * 1993-10-30 1997-06-30 삼성전자 주식회사 누설전류가 감소된 박막 트랜지스터 및 그 제조방법
JP2734962B2 (ja) * 1993-12-27 1998-04-02 日本電気株式会社 薄膜トランジスタ及びその製造方法

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