KR940007591A - 액정표시장치 - Google Patents

액정표시장치 Download PDF

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KR940007591A
KR940007591A KR1019930019576A KR930019576A KR940007591A KR 940007591 A KR940007591 A KR 940007591A KR 1019930019576 A KR1019930019576 A KR 1019930019576A KR 930019576 A KR930019576 A KR 930019576A KR 940007591 A KR940007591 A KR 940007591A
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low concentration
concentration impurity
region
thin film
liquid crystal
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KR100292767B1 (ko
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마사후미 구니이
유지 하야시
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오가 노리오
소니 가부시기가이샤
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Abstract

본 발명은 화소스위칭소자로서 사용되는 박막트랜지스터의 리크전류를 억제하여 한계치전압을 안정화시키고, 게이트용량커플링의 불균일을 억제하여 채널길이의 단축화를 도모하는 액티브매트릭스형 액정표시장치의 박막트랜지스터구조에 관한 것이다. 액정표시장치는 매트릭스형으로 배열한 화소전극과, 이 화소전극을 구동하는 스위칭소자를 구비한 하나의 기판과, 대향전극을 가지며 상기 하나의 기판에 대향배치된 다른 하나의 기판과, 양쪽의 기판에 협지된 액정층을 구비하고 있다. 이 스위칭소자는 복수개 예를 들면 2개의 박막트랜지스터를 직렬 접속하고, 또한 각 게이트전극을 서로 전기접속한 멀티게이트구조를 가진다. 각 박막트랜지스터는 최소한 소스영역 또는 드레인영역과 채널영역과의 사이에 소스영역 또는 드레인영역과 동일 도전형의 저농도 불순물영역을 구비한 LDD 구조를 가진다. 경우에 따라서는, 복수개의 저농도 불순물 영역중 최소한 1개는 다른 저농도 불순물영역과 다른 길이 또는 농도가 되도록 하고, 리크전류를 억제하면서 충분한 온전류를 확보한다.

Description

액정표시장치.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 액티브매트릭스형 액정표시장치의 제1실시예의 요부로 되는 TFT를 도시한 모식적인 부분단면도,
제2도는 제1도에 도시한 TFT의 변형예를 도시한 모식적인 단면도, 제3도는 역시 제1도에 도시한 TFT의 다른 변형예를 도시한 모식적인 단면도,
제9도는 본 발명에 관한 n채널형 멀티게이트 LDD TFT의 게이트 전압/드레인전류곡선을 도시한 그래프, 제11도는 본 발명에 관한 멀티게이트 구조 LDD TFT를 사용하여 구성된 액티브매트릭스형 액정표시장치의 일예를 도시한 사시도.

Claims (11)

  1. 제1기판과, 제1기판상에 매트릭스형으로 배열한 복수의 화소전극으로서, 스위칭소자는 복수의 박막트랜지스터를 직렬접속하고, 또한 각 박막트랜지스터의 게이트전극은 서로 전기접속되며, 각 박막트랜지스터는 소스/드레인영역과 채널영역과의 사이에 소스/드레인영역과 동일 도전형의 저농도 불순물영역을 가지는 스위칭소자와 결합된 화소전극과, 제1기판에 대항 배치되고, 그 내표면에 대향전극을 가지는 제2기판과, 제1기판과 제2기판의 사이에 협지된 액정층으로 이루어지는 것을 특징으로 하는 액정표시장치.
  2. 제1항에있어서, 상기 박막트랜지스터는 소스영역과 채널영역의 사이에 제1저농도 불순물영역을 가지고, 채널영역과 드레인영역의 사이에 제2저농도 불순물영역을 가지는 것을 특징으로 하는 액정표시장치.
  3. 제1항에 있어서, 상기 스위칭소자는 직렬접속된 1쌍의 박막트랜지스터로 이루어지는 것을 특징으로 하는 액정표시장치.
  4. 제3항에 있어서, 상기 박막트랜지스터중 하나는 소스영역과 채널영역의 사이에만 제1저농도 불순물영역을 가지고, 다른 박막 트랜지스터는 드레인영역과 채널영역의 사이에만 제2저농도 불순물영역을 가지는 것을 특징으로 하는 액정표시장치.
  5. 제3항에 있어서, 상기 1쌍의 박막트랜지스터는 소스/드레인영역의 양단부에 2개의 저농도 불순물영역을 가지는 것을 특징으로 하는 액정표시장치.
  6. 제3항에 있어서, 상기 1쌍의 박막트랜지스터는 드레인영역 단부에 제1저농도 불순물영역을 가지고, 소스/드레인영역의 드레인측 단부에 제2저농도 불순물영역을 가지는 것을 특징으로 하는 액정표시장치.
  7. 제1항에 있어서, 각 박막트랜지스터는 5μm이하의 채널길이을 가지는 것을 특징으로 하는 액정표시장치.
  8. 제1항에 있어서, 상기 복수개의 박막트랜지스터에 배설된 복수개의 저농도 불순물영역중 최소한 1개는 다른 저농도 불순물영역과 다른 길이를 가지는 것을 특징으로 하는 액정표시장치.
  9. 제8항에 있어서, 화소전극에 가장 가까운 상기 다른 길이를 가지는 저농도 불순물영역은 다른 저농도 불순물 영역보다 긴 것을 특징으로 하는 액정표시장치.
  10. 제1항에 있어서, 상기 복수개의 박막트랜지스터에 배설된 복수개의 저농도 불순물영역중 최소한 1개는 다른 저농도 불순물영역과 다른 농도를 가지는 것을 특징으로 하는 액정 표시장치.
  11. 제10항에 있어서, 화소전극에 가장 가까운 상기 다른 농도를 가지는 저농도 불순물영역은 다른 저농도 불순물영역보다 낮은 농도를 가지는 것을 특징으로 하는 액정표시장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930019576A 1992-09-25 1993-09-24 액정표시장치 KR100292767B1 (ko)

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Application Number Priority Date Filing Date Title
JP92-280,462 1992-09-25
JP28046292 1992-09-25
JP93-21,996 1993-01-14
JP2199693 1993-01-14

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KR940007591A true KR940007591A (ko) 1994-04-27
KR100292767B1 KR100292767B1 (ko) 2001-09-17

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US (1) US5412493A (ko)
EP (1) EP0589478B1 (ko)
KR (1) KR100292767B1 (ko)
DE (1) DE69327028T2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR100355713B1 (ko) * 1999-05-28 2002-10-12 삼성전자 주식회사 탑 게이트 방식 티에프티 엘시디 및 제조방법
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