KR910018836A - 액티브매트릭스 표시장치 - Google Patents

액티브매트릭스 표시장치 Download PDF

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Publication number
KR910018836A
KR910018836A KR1019910006312A KR910006312A KR910018836A KR 910018836 A KR910018836 A KR 910018836A KR 1019910006312 A KR1019910006312 A KR 1019910006312A KR 910006312 A KR910006312 A KR 910006312A KR 910018836 A KR910018836 A KR 910018836A
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South Korea
Prior art keywords
pair
thin film
film transistors
electrode
gate
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KR1019910006312A
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English (en)
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KR940006989B1 (ko
Inventor
가다야마 미끼오
곤도 나오후미
가네모리 유주루
후지하라 도시아끼
후지끼 히로시
나가자와 기요시
Original Assignee
쓰지 하루오
샤프 가부시끼가이샤
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Publication of KR910018836A publication Critical patent/KR910018836A/ko
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Publication of KR940006989B1 publication Critical patent/KR940006989B1/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Abstract

내용 없음

Description

액티브매트릭스 표시장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 액티브매트릭스 표시장치에 사용된 액티브매트릭스기판의부위를 표시한 평면도. 제2도는 제1도의 기판의 TFT단면을 확대한 평면도. 제3도는 제2도의 III-III선을 따라 취한 단면도.

Claims (3)

  1. 한쌍의 절연기판과, 이 한쌍의 절연기판중 하나의 내측에 매트릭스로 배열된 픽셀전극과, 이 픽셀전극사이에 배열된 게이트버스와, 각 필셀전극용으로 배치된 적어도 한쌍의 박막트렌지스터를 포함하는 표시장치에 있어서, 상기의 각 박막트랜지스터는 게이트 전극과 드레인전극을 포함하되, 각 쌍의 박막트랜지스터의 게이트전극이 상기의 한쌍의 박막트랜지스터상이에 있는 중앙을 통과하는 중심면에 대하여 대칭적인 형상으로 형성되고, 상기의 게이트전극은 상기 게이트 버스의 방향에 수직으로 있으며, 그리고 상기 쌍의 드레인전극은 상기의 중심면에 대하여 대칭적인 형상으로 형성된 것을 특징으로 하는 액티브 매트릭스 표시장치.
  2. 제1항에 있어서, 상기의 게이트버스와 평행하게 열로 배열된 서로 정열되어 있고, 그리고 그 인접열의 픽셀전극은 상기의 게이트 버스를 따라 각 픽셀전극측의 절반에 의해 서로 대체되는 것을 특징으로 하는 액티브매트릭스 표시장치.
  3. 제1항에 있어서, 상기의 픽셀전극은 그 사이에 지그재그 형으로 배열된 소오스 버스에 연결되는 것을 특징으로 하는 액티브매트릭스 표시장치.
    ※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.
KR1019910006312A 1990-04-20 1991-04-19 액티브매트릭스 표시장치 KR940006989B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10598290A JPH0830825B2 (ja) 1990-04-20 1990-04-20 アクティブマトリクス表示装置
JP2-105982 1990-04-20

Publications (2)

Publication Number Publication Date
KR910018836A true KR910018836A (ko) 1991-11-30
KR940006989B1 KR940006989B1 (ko) 1994-08-03

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KR1019910006312A KR940006989B1 (ko) 1990-04-20 1991-04-19 액티브매트릭스 표시장치

Country Status (5)

Country Link
US (1) US5191451A (ko)
EP (1) EP0453324B1 (ko)
JP (1) JPH0830825B2 (ko)
KR (1) KR940006989B1 (ko)
DE (1) DE69110531T2 (ko)

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Also Published As

Publication number Publication date
DE69110531D1 (de) 1995-07-27
JPH043124A (ja) 1992-01-08
EP0453324B1 (en) 1995-06-21
JPH0830825B2 (ja) 1996-03-27
EP0453324A2 (en) 1991-10-23
KR940006989B1 (ko) 1994-08-03
DE69110531T2 (de) 1996-01-18
EP0453324A3 (en) 1992-04-15
US5191451A (en) 1993-03-02

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