KR960039436A - 박막트랜지스터 및 그것을 사용한 액정표시장치 - Google Patents

박막트랜지스터 및 그것을 사용한 액정표시장치 Download PDF

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KR960039436A
KR960039436A KR1019960010707A KR19960010707A KR960039436A KR 960039436 A KR960039436 A KR 960039436A KR 1019960010707 A KR1019960010707 A KR 1019960010707A KR 19960010707 A KR19960010707 A KR 19960010707A KR 960039436 A KR960039436 A KR 960039436A
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thin film
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슌수케 이노우에
타케시 이치카와
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미타라이 후지오
캐논 가부시끼가이샤
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
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Abstract

본 발명의 박막트랜지스터는 절연기판상의 박막실리콘영역내에 형성된 소스영역, 드레인영역 및 채널영역과 상기 채널영역상의 게이트절연막을 통해 형성된 게이트 전극을 구비하고; 상기 소스영역과, 상기 드레인영역중 적어도 하나는 고농도 불순물영역과, 저농도 불순물영역을 지니고; 상기 채널영역은 상기 저농도불순물영역과, 접촉하고, 있으며; 상기 저농도불순물영역은 상기 채널영역과, 두께가 거의 동일한 박막으로 구서된 제1영역과; 상기 제1영역보다도 두꺼운 상기 고농도불순물영역과 두께가 거의 동일한 박막으로 구성된 제2영역을 적어도 구비한다.
액정표시장치는 상기 박막트랜지스터가 매트릭스형태로 배치된 TFT기판을 지닌다. 액정표시장치는 상기 소스영역의 전극이나 상기 드레인영역의 전극이 투명전극에 접속된 복수의 박막 트랜지스터를 구비하고, 있다.

Description

박막트랜지스터 및 그것을 사용한 액정표시 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 TET의 일실시예의 단면도

Claims (6)

  1. 절연기판상의 박막실리콘영역내에 형성된 소스영역, 드레인영역 및 채널영역과, 상기 채널영역상의 게이트절연막을 통해 형성된 게이트전극을 구비하고; 상기 소스영역과, 상기 드레인영역중 적어도 하나는 고농도 불순물영역과 저농도불순물영역을 지니고; 상기 채널영역은 상기 저농도불순물영역과, 접촉하고 있으며; 상기 저농도불순물영역이 상기 채널영역과 두께가 거의 동일한 박막으로 구성된 제1영역과; 상기 제1영역보다도 두께가 상기 고농도불순물영역과 두께가 박막으로 구성된 제2영역을 적어도 구비한 것을 특징으로 하는 박막트랜지스터.
  2. 제1항에 있어서, 상기 게이트전극은 소스 · 드레인전류의 흐름방향으로 복수의 부분으로 분할되고, 분할된 게이트전극 모두는 등전위로 접속된 것을 특징으로 하는 박막트랜지스터.
  3. 제1항에 있어서, 상기 게이트전극의 일부는 상기 제2영역의 적어도 일부를 커버하는 것을 특징으로 하는 박막트랜지스터.
  4. 제1항에 있어서, 상기 게이트전극은 소스 · 드래인전류의 흐름방향으로 복수의 부분으로 분할되고 분할된 게이트전극 하부의 채널영역은 상기 저농도불순물영역을 통해 서로 접속되어 있는 것을 특징으로 하는 박막트랜지스터.
  5. 제1항내지 제3항 중 어느한 항에 기재된 박막트랜지스터가 매트릭스형태로 배열된 것을 특징으로 하는 TFT기판을 지닌 액정표시장치.
  6. 절연기판상의 박막실리콘영역내에 형성된 소스영역, 드레인영역 및 채널영역과 상기 채널영역상의 게이트절연막을 통해 형성된 게이트전극을 구비하고; 상기 소스영역과, 상기 드레인영역중 적어도 하나는 고농도불순물영역과, 저농도불순물영역을 지니고; 상기 채널 영역은 상기 저농도불순물영역과, 접촉하고 있으며: 상기 저농도불순물영역이 상기 채널영역과 두께가 거의 동일한 박막으로 구성된 제1영역과; 상기 제1영역보다 두꺼운 상기 고농도 불순물영역과 두께가 거의 동일한 박막으로 구성된 제2영역을 적어도 구비하고; 상기 소스영역의 전극 또는 상기 드레인영역의 전극이 투명전극에 접속되어 있는 것을 특징으로 하는 복수의 박막트랜지스터를 구비한 액정표시장치.
    ※참고사항: 최초출원 내용에 의하여 공개하는 것임.
KR1019960010707A 1995-04-10 1996-04-10 박막트랜지스터 및 그것을 사용한 액정표시장치 KR100261983B1 (ko)

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JP95-84106 1995-04-10
JP8410695 1995-04-10
JP96-81485 1996-04-03
JP8148596A JP3292657B2 (ja) 1995-04-10 1996-04-03 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法

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US (1) US5693959A (ko)
EP (1) EP0738012B1 (ko)
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DE (1) DE69618697D1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
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KR100532082B1 (ko) * 2001-12-28 2005-11-30 엘지.필립스 엘시디 주식회사 다결정 박막트랜지스터 및 그 제조방법
KR100793278B1 (ko) * 2005-02-25 2008-01-10 재단법인서울대학교산학협력재단 다결정 실리콘 박막트랜지스터의 제조 방법
KR100848338B1 (ko) * 2007-01-09 2008-07-25 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 포함하는평판표시장치

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KR100248200B1 (ko) * 1996-12-30 2000-03-15 김영환 Soi 반도체 소자 및 그의 제조방법
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