KR930006975A - 절연게이트형 전계효과 트랜지스터 - Google Patents

절연게이트형 전계효과 트랜지스터 Download PDF

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Publication number
KR930006975A
KR930006975A KR1019920014740A KR920014740A KR930006975A KR 930006975 A KR930006975 A KR 930006975A KR 1019920014740 A KR1019920014740 A KR 1019920014740A KR 920014740 A KR920014740 A KR 920014740A KR 930006975 A KR930006975 A KR 930006975A
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KR
South Korea
Prior art keywords
electrode
gate
drain
field effect
effect transistor
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KR1019920014740A
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English (en)
Inventor
도시유끼 사메시마
나오끼 사노
파루 고사인 다라무
세쓰오 우스이
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오가 노리오
소니 가부시기가이샤
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Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR930006975A publication Critical patent/KR930006975A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Abstract

절연게이트형 전계효과트랜지스터에 있어서, 소스 영역 및 드레인 여역을 요하지 않고, 제조공정의 간략화를 도모한다.
활성층을 구성하는 진성(眞性)의 다결정 Si 박막(2)상에 소스전극 S 및 드레인전극 D을 형성한다. 소스전극 S과 드레인전극 D과의 사이의 부분의 게이트절연막(3)상에 주계이트전극 GM을 형성한다. 또한, 소스전극 S과 주게이트전극 GM과의 사이의 부분 및 드레인전극 D과 주게이트전극 GM과의 사이의 부분의 게이트절연막(3)상에 각각 부게이트전극 Gs1, Gs2을 형성하고, 이들 부게이트 전극 Gs1, Gs2에 게이트 전압을 인가한다.

Description

절연게이트형 전계효과 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (1)

  1. 진성(眞性) 또는 저불순물농도의 반도체로 이루어지는 활성층과, 상기 활성층상에 배설된 소스전극 및 드레인전극과, 상기 소스전극과 상기 드레인전극과의 사이에 게이트 절연막을 통해 상기 활성층과 대항하여 배설된 주게이트전극과, 최소한 상기 드레인전극과 상기 주게이트전극과의 사이에 상기 게이트절연막을 통해 상기 활성층과 대향하여 배설된 부게이트전극을 구비하는 절연게이트형 전계효과트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920014740A 1991-09-30 1992-08-17 절연게이트형 전계효과 트랜지스터 KR930006975A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3278716A JPH0590587A (ja) 1991-09-30 1991-09-30 絶縁ゲート型電界効果トランジスタ
JP91-278,716 1991-09-30

Publications (1)

Publication Number Publication Date
KR930006975A true KR930006975A (ko) 1993-04-22

Family

ID=17601201

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920014740A KR930006975A (ko) 1991-09-30 1992-08-17 절연게이트형 전계효과 트랜지스터

Country Status (3)

Country Link
US (1) US5446304A (ko)
JP (1) JPH0590587A (ko)
KR (1) KR930006975A (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9325984D0 (en) * 1993-12-20 1994-02-23 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film transistors
KR0151195B1 (ko) * 1994-09-13 1998-10-01 문정환 박막 트랜지스터의 구조 및 제조방법
US5920085A (en) * 1996-02-03 1999-07-06 Samsung Electronics Co., Ltd. Multiple floating gate field effect transistors and methods of operating same
KR0177785B1 (ko) * 1996-02-03 1999-03-20 김광호 오프셋 구조를 가지는 트랜지스터 및 그 제조방법
US5953596A (en) 1996-12-19 1999-09-14 Micron Technology, Inc. Methods of forming thin film transistors
US5898198A (en) * 1997-08-04 1999-04-27 Spectrian RF power device having voltage controlled linearity
US6744082B1 (en) 2000-05-30 2004-06-01 Micron Technology, Inc. Static pass transistor logic with transistors with multiple vertical gates
KR100571827B1 (ko) * 2003-12-17 2006-04-17 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
US9299848B2 (en) * 2014-03-14 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RF tag, and electronic device
US10297694B2 (en) * 2015-10-14 2019-05-21 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
CN110212035B (zh) * 2018-08-10 2023-12-19 友达光电股份有限公司 晶体管结构及其操作方法
KR20220117971A (ko) * 2021-02-17 2022-08-25 삼성디스플레이 주식회사 표시 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1136569A (en) * 1965-12-22 1968-12-11 Mullard Ltd Insulated gate field effect transistors
US4319263A (en) * 1978-05-18 1982-03-09 Texas Instruments Incorporated Double level polysilicon series transistor devices
JPS60226180A (ja) * 1984-04-25 1985-11-11 Nec Corp 半導体装置及びその製造方法
JPS60233859A (ja) * 1984-05-04 1985-11-20 Nec Corp 高耐圧半導体スイツチ
EP0197531B1 (en) * 1985-04-08 1993-07-28 Hitachi, Ltd. Thin film transistor formed on insulating substrate
US5124769A (en) * 1990-03-02 1992-06-23 Nippon Telegraph And Telephone Corporation Thin film transistor

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Publication number Publication date
JPH0590587A (ja) 1993-04-09
US5446304A (en) 1995-08-29

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