KR830004680A - 박막 트랜지스터 - Google Patents

박막 트랜지스터

Info

Publication number
KR830004680A
KR830004680A KR1019800004728A KR800004728A KR830004680A KR 830004680 A KR830004680 A KR 830004680A KR 1019800004728 A KR1019800004728 A KR 1019800004728A KR 800004728 A KR800004728 A KR 800004728A KR 830004680 A KR830004680 A KR 830004680A
Authority
KR
South Korea
Prior art keywords
thin film
gate insulator
film transistor
region
source region
Prior art date
Application number
KR1019800004728A
Other languages
English (en)
Other versions
KR840001605B1 (ko
Inventor
에이취. 홀름버그 스콧트
에이. 플라스크 리처드
Original Assignee
스탠포드 알. 오브신스키
에너지 컨버션 디바이스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스탠포드 알. 오브신스키, 에너지 컨버션 디바이스, 인코포레이티드 filed Critical 스탠포드 알. 오브신스키
Publication of KR830004680A publication Critical patent/KR830004680A/ko
Priority to KR1019840004146A priority Critical patent/KR850000902B1/ko
Application granted granted Critical
Publication of KR840001605B1 publication Critical patent/KR840001605B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

박막 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 평면 NOS형 트랜지스터와 비슷한 금속공급원과 배출영역을 지닌 본 발명에 따라 만든 박막증착장효과 트랜지스터 일예의 수직단면도. 제2도는 제1도 트랜지스터의 회로개략도. 제3도는 반도체 공급원과 배출영역을 지닌 제1도 트랜지스터와 비슷한 박막증착 장효과 트랜지스터 두번째예의 수직단면도. 제4도는 제3도 트랜지스터의 회로 개략도.

Claims (1)

  1. 본문에 상술하고 도면에 도시한 바와 같이, 공급원영역(Source region), 배출영역(Drain region), 게이트 절연체 및 이게이트 절연체에 접촉시키는 게이트 전극을 포함하는 것으로서, 최소한 실리콘과 불소를 포함하는 박막증착부정형 합금(thin-film deposited amorphous ally) (14;44;76;96;118)이 상술한 공급원 영역(22;52;78;98;114) 배출영역(24;54;74;94;116) 및 게이트 절연체(26;56;80;102; 120)에 결합됨을 특징으로 하는 박막 장효과 트랜지스터장치(tein film, field effecf transistor devic).
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019800004728A 1979-12-12 1980-12-12 박막 트랜지스터 KR840001605B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019840004146A KR850000902B1 (ko) 1979-12-12 1984-07-14 박막 트랜지스터

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US103011 1979-12-13
US103011179 1979-12-13
US20827880A 1980-11-19 1980-11-19
US208278180 1980-11-19
US208278 1980-11-19

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1019840004146A Division KR850000902B1 (ko) 1979-12-12 1984-07-14 박막 트랜지스터

Publications (2)

Publication Number Publication Date
KR830004680A true KR830004680A (ko) 1983-07-16
KR840001605B1 KR840001605B1 (ko) 1984-10-11

Family

ID=26799985

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019800004728A KR840001605B1 (ko) 1979-12-12 1980-12-12 박막 트랜지스터
KR1019840004146A KR850000902B1 (ko) 1979-12-12 1984-07-14 박막 트랜지스터

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019840004146A KR850000902B1 (ko) 1979-12-12 1984-07-14 박막 트랜지스터

Country Status (14)

Country Link
KR (2) KR840001605B1 (ko)
AU (2) AU538008B2 (ko)
BE (1) BE886630A (ko)
CA (3) CA1153480A (ko)
DE (2) DE3046358A1 (ko)
FR (1) FR2474763B1 (ko)
GB (2) GB2067353B (ko)
IE (1) IE51076B1 (ko)
IL (1) IL61679A (ko)
IT (1) IT1193999B (ko)
MX (1) MX151189A (ko)
NL (2) NL8006770A (ko)
SE (1) SE8008738L (ko)
SG (1) SG72684G (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
US6294796B1 (en) * 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5677547A (en) * 1982-04-30 1997-10-14 Seiko Epson Corporation Thin film transistor and display device including same
US5650637A (en) * 1982-04-30 1997-07-22 Seiko Epson Corporation Active matrix assembly
US5365079A (en) * 1982-04-30 1994-11-15 Seiko Epson Corporation Thin film transistor and display device including same
US4543320A (en) * 1983-11-08 1985-09-24 Energy Conversion Devices, Inc. Method of making a high performance, small area thin film transistor
US4633284A (en) * 1983-11-08 1986-12-30 Energy Conversion Devices, Inc. Thin film transistor having an annealed gate oxide and method of making same
US4620208A (en) * 1983-11-08 1986-10-28 Energy Conversion Devices, Inc. High performance, small area thin film transistor
US4547789A (en) * 1983-11-08 1985-10-15 Energy Conversion Devices, Inc. High current thin film transistor
US4752814A (en) * 1984-03-12 1988-06-21 Xerox Corporation High voltage thin film transistor
US4668968A (en) * 1984-05-14 1987-05-26 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4670763A (en) * 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4769338A (en) * 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4673957A (en) * 1984-05-14 1987-06-16 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
KR100741798B1 (ko) * 2004-12-30 2007-07-25 엘지전자 주식회사 건조기 일체형 세탁기
CN112420821B (zh) * 2020-10-29 2021-11-19 北京元芯碳基集成电路研究院 一种基于碳基材料的y型栅结构及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3384792A (en) * 1965-06-01 1968-05-21 Electro Optical Systems Inc Stacked electrode field effect triode
US4115799A (en) * 1977-01-26 1978-09-19 Westinghouse Electric Corp. Thin film copper transition between aluminum and indium copper films
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
DE2820331C3 (de) * 1978-05-10 1982-03-18 Lüder, Ernst, Prof. Dr.-Ing., 7000 Stuttgart Dünnschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung
GB2052853A (en) * 1979-06-29 1981-01-28 Ibm Vertical fet on an insulating substrate

Also Published As

Publication number Publication date
GB2131605A (en) 1984-06-20
DE3051063C2 (ko) 1991-04-11
GB2131605B (en) 1985-02-13
IT1193999B (it) 1988-08-31
CA1163377A (en) 1984-03-06
AU538008B2 (en) 1984-07-26
IL61679A0 (en) 1981-01-30
MX151189A (es) 1984-10-09
AU2845184A (en) 1984-09-13
SG72684G (en) 1985-03-29
FR2474763A1 (fr) 1981-07-31
DE3046358A1 (de) 1981-09-17
KR850001478A (ko) 1985-02-18
BE886630A (fr) 1981-04-01
NL8401928A (nl) 1984-10-01
CA1153480A (en) 1983-09-06
FR2474763B1 (fr) 1987-03-20
SE8008738L (sv) 1981-06-14
CA1188008A (en) 1985-05-28
KR850000902B1 (ko) 1985-06-26
GB2067353A (en) 1981-07-22
NL8006770A (nl) 1981-07-16
KR840001605B1 (ko) 1984-10-11
IL61679A (en) 1984-11-30
AU554058B2 (en) 1986-08-07
IE802615L (en) 1981-06-13
GB8326775D0 (en) 1983-11-09
GB2067353B (en) 1984-07-04
DE3046358C2 (ko) 1987-02-26
IE51076B1 (en) 1986-10-01
AU6531380A (en) 1981-06-18
IT8026642A0 (it) 1980-12-12

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