KR900015370A - 이중 게이트형 박막트랜지스터 - Google Patents
이중 게이트형 박막트랜지스터 Download PDFInfo
- Publication number
- KR900015370A KR900015370A KR1019890003759A KR890003759A KR900015370A KR 900015370 A KR900015370 A KR 900015370A KR 1019890003759 A KR1019890003759 A KR 1019890003759A KR 890003759 A KR890003759 A KR 890003759A KR 900015370 A KR900015370 A KR 900015370A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film transistor
- gate thin
- double gate
- layer
- Prior art date
Links
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 title claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 238000002161 passivation Methods 0.000 claims 2
- 230000009977 dual effect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명 박막트랜지스터의 단면도.
Claims (1)
- 유리기판(31) 상부에 길이의 비율이 1:10이 되게 고전압용 게이트전극(32a) 및 저전압용 게이트전극(32b)을 형성한 후 게이트절연층(33) 및 아몰퍼스실리콘층(34), 패시베이션층(35)을 형성하고, 그 패시베이선층(35)을 선택식식각하여 n+아몰퍼실리콘층(36) 및 드레인전극(37a), 소오스전극(37b)을 순차적층하여 형성되는 것을 특징으로 하는 이중 게이트형 박막 트랜지스터.※참고사항:최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890003759A KR0133537B1 (ko) | 1989-03-24 | 1989-03-24 | 이중 게이트형 박막트랜지스터 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890003759A KR0133537B1 (ko) | 1989-03-24 | 1989-03-24 | 이중 게이트형 박막트랜지스터 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900015370A true KR900015370A (ko) | 1990-10-26 |
| KR0133537B1 KR0133537B1 (ko) | 1998-04-22 |
Family
ID=19284779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890003759A KR0133537B1 (ko) | 1989-03-24 | 1989-03-24 | 이중 게이트형 박막트랜지스터 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0133537B1 (ko) |
-
1989
- 1989-03-24 KR KR1019890003759A patent/KR0133537B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0133537B1 (ko) | 1998-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR910017676A (ko) | 박막트랜지스터 | |
| KR960015929A (ko) | 반도체장치 및 그 제조공정 | |
| KR920010957A (ko) | 박막 반도체 장치 | |
| KR900019245A (ko) | 박막트랜지스터 및 그 제조방법 | |
| KR830004680A (ko) | 박막 트랜지스터 | |
| KR910019260A (ko) | 반도체장치및 그의 제조방법 | |
| KR890004444A (ko) | Mos트랜지스터 | |
| KR930006975A (ko) | 절연게이트형 전계효과 트랜지스터 | |
| KR900015311A (ko) | 반도체장치 및 그 제조방법 | |
| KR850005162A (ko) | 전계효과형 트랜지스터 | |
| KR900015370A (ko) | 이중 게이트형 박막트랜지스터 | |
| KR930022601A (ko) | 반도체 장치의 제조방법 | |
| KR900015350A (ko) | 비정질 규소 박막 트랜지스터 | |
| KR930005241A (ko) | Tft의 제조방법 | |
| KR900005561A (ko) | 반도체장치 | |
| KR890008966A (ko) | 반도체장치의 배선접속부 | |
| KR930005239A (ko) | Tft의 제조방법 | |
| KR950007148A (ko) | 다결정 실리콘 박막트랜지스터 | |
| KR910005390A (ko) | 고전압용 박막 트랜지스터 및 그 제조법 | |
| KR970054469A (ko) | 이중(double) 게이트를 갖는 소이 트랜지스터 | |
| KR920013751A (ko) | 박막 트랜지스터 | |
| JPS641275A (en) | Semiconductor device | |
| KR930005261A (ko) | 박막형 반도체소자 및 그 제작방법 | |
| KR900017150A (ko) | 다중 게이트 박막 트랜지스터 제조방법 | |
| KR920702028A (ko) | 반도체 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20081001 Year of fee payment: 12 |
|
| LAPS | Lapse due to unpaid annual fee |