KR890008966A - 반도체장치의 배선접속부 - Google Patents

반도체장치의 배선접속부 Download PDF

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Publication number
KR890008966A
KR890008966A KR1019880014840A KR880014840A KR890008966A KR 890008966 A KR890008966 A KR 890008966A KR 1019880014840 A KR1019880014840 A KR 1019880014840A KR 880014840 A KR880014840 A KR 880014840A KR 890008966 A KR890008966 A KR 890008966A
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KR
South Korea
Prior art keywords
polysilicon layer
semiconductor device
wiring connection
wiring
connection
Prior art date
Application number
KR1019880014840A
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English (en)
Other versions
KR910007513B1 (ko
Inventor
가즈히코 다카하시
마코토 세가와
기요시 고바야시
기요후미 오치이
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이콤 엔지니어링 가부시키 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이콤 엔지니어링 가부시키 가이샤 filed Critical 아오이 죠이치
Publication of KR890008966A publication Critical patent/KR890008966A/ko
Application granted granted Critical
Publication of KR910007513B1 publication Critical patent/KR910007513B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체장치의 배선접속부
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a도는 본 발명에 따른 1실시예에 대한 단면도.
제1b도는 1실시예에 따른 패턴평면도.
* 도면의 주요부분에 대한 부호의 설명
1 : Si기판 2 : 절연막
3, 5, 12 : 다결정실리콘층 4 : 금속배선층
6 : 확산층 7, 8, 10 : 접촉구멍
11 : n+확산층 13 : 단락장소

Claims (2)

  1. 고저항 배선재료로서 사용되는 얇은 다결정실리콘층(5)과 금속배선층(4)이 접촉구멍(8)을 통해 접속되는 접속장소에 있어서, 그 접속장소의 아래에 두꺼운 다결정실리콘층(3)이 설치되고, 이 두꺼운 다결정실리콘층(3)이 상기 접속장소의 아래에서 접촉구멍(7)을 통해 상기 얇은 다결정실리콘층(5)과 전기적으로 접속되도록 되어 있는 것을 특징으로 하는 반도체장치의 배선접속부.
  2. 제1항에 있어서 상기 두꺼운 다결정실리콘층(3)이 MOS트랜지스터의 게이트를 구성하는 다결정실리콘과 몰리브덴등과 같은 배선재료로 구성되어 있는 것을 특징으로 하는 반도체장치의 배선접속부.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880014840A 1987-11-12 1988-11-11 반도체장치의 배선접속부 KR910007513B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62284322A JPH0680733B2 (ja) 1987-11-12 1987-11-12 半導体装置の配線接続部
JP62-284322 1987-11-12

Publications (2)

Publication Number Publication Date
KR890008966A true KR890008966A (ko) 1989-07-13
KR910007513B1 KR910007513B1 (ko) 1991-09-26

Family

ID=17677051

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014840A KR910007513B1 (ko) 1987-11-12 1988-11-11 반도체장치의 배선접속부

Country Status (3)

Country Link
EP (1) EP0315980A3 (ko)
JP (1) JPH0680733B2 (ko)
KR (1) KR910007513B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940000504B1 (ko) * 1991-03-20 1994-01-21 삼성전자 주식회사 반도체장치의 층간콘택구조 및 그 제조방법
US6509625B1 (en) * 1998-04-03 2003-01-21 Zetex Plc Guard structure for bipolar semiconductor device
JP2001118927A (ja) * 1999-10-22 2001-04-27 Mitsubishi Electric Corp 半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736844A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Semiconductor device
JPS57143853A (en) * 1981-03-03 1982-09-06 Toshiba Corp Semiconductor device
JPS58130554A (ja) * 1982-01-28 1983-08-04 Toshiba Corp 半導体装置の製造方法
JPS6276653A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 半導体集積回路
JPS62286252A (ja) * 1986-06-04 1987-12-12 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
EP0315980A2 (en) 1989-05-17
JPH01128448A (ja) 1989-05-22
KR910007513B1 (ko) 1991-09-26
JPH0680733B2 (ja) 1994-10-12
EP0315980A3 (en) 1989-07-26

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