KR880013257A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR880013257A
KR880013257A KR1019880004264A KR880004264A KR880013257A KR 880013257 A KR880013257 A KR 880013257A KR 1019880004264 A KR1019880004264 A KR 1019880004264A KR 880004264 A KR880004264 A KR 880004264A KR 880013257 A KR880013257 A KR 880013257A
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KR
South Korea
Prior art keywords
semiconductor device
melting point
high melting
crystal silicon
silicon layer
Prior art date
Application number
KR1019880004264A
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English (en)
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KR920000636B1 (ko
Inventor
유우이치 미가타
도시로 우사미
가츠노리 이시하라
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이콤 엔지니어링 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이콤 엔지니어링 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR880013257A publication Critical patent/KR880013257A/ko
Application granted granted Critical
Publication of KR920000636B1 publication Critical patent/KR920000636B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 실시예인 MOS 트랜지스터의 단면도, 제 2 도⒜ 및 ⒝는 제 1 도에 도시한 MOS트랜지스터의 제조공정일부를 나타낸 단면도, 제 3 도는 저항율과 불순물농도의 관계를 나타낸 그라프.

Claims (4)

  1. 비단결정실리콘층과, 이 비단결정실리콘층상에 형성시킨 고융점금속 또는 고융점금속규화물층으로 형성되는 적층구조를 반도체기판의 일주면상에 설치된 것을 특징으로 하는 반도체장치에 있어서, 비단결정실리콘층이 실리콘퇴적과 동시에 혼입된 불순물에 의해서 1×10-3Ω.㎝이하인 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 반도체장치가 절연게이트형 전계효과 트랜지스터이며, 상기 적층구조가 이 트랜지스터의 전극 또는 배선부를 구성시키는 것임을 특징으로 하는 반도체장치.
  3. 제1항 또는 제2항에 있어서, 상기 고융점금속규화물은 티타늄과 텅스텐, 몰리브덴 지르코늄 및 탄탄륨 중 어느 한종류와 실리콘과 결합된 금속규화물 또는 이들 금속 규화물의 혼합물인 것을 특징으로 하는 반도체장치.
  4. 제1항 내지 제3항에 있어서,비단결정실리콘층에 혼입된 불순물이 이, 비소, 보론 안티몬중 적어도 하나인 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880004264A 1987-04-14 1988-04-14 반도체장치 KR920000636B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-89772 1987-04-14
JP62089772A JPH0616556B2 (ja) 1987-04-14 1987-04-14 半導体装置

Publications (2)

Publication Number Publication Date
KR880013257A true KR880013257A (ko) 1988-11-30
KR920000636B1 KR920000636B1 (ko) 1992-01-17

Family

ID=13979972

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880004264A KR920000636B1 (ko) 1987-04-14 1988-04-14 반도체장치

Country Status (5)

Country Link
US (1) US5612236A (ko)
EP (1) EP0287931B1 (ko)
JP (1) JPH0616556B2 (ko)
KR (1) KR920000636B1 (ko)
DE (1) DE3850599T2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2016449C (en) * 1989-07-28 1996-06-25 Steven J. Hillenius Planar isolation technique for integrated circuits
KR0161735B1 (ko) * 1995-06-30 1999-02-01 김주용 반도체 소자의 제조방법
JP3523093B2 (ja) * 1997-11-28 2004-04-26 株式会社東芝 半導体装置およびその製造方法
JP4389359B2 (ja) * 2000-06-23 2009-12-24 日本電気株式会社 薄膜トランジスタ及びその製造方法
US7119112B2 (en) * 2002-02-28 2006-10-10 Icagen, Inc. Sulfonamides as potassium channel blockers
WO2003074038A1 (en) * 2002-02-28 2003-09-12 Icagen, Inc. Methods for treating diseases related to intraocular pressure
US20060197120A1 (en) * 2003-03-28 2006-09-07 Koninklijke Phillips Electonics N.C. Gate electrode for semiconductor devices
US20180158860A1 (en) * 2016-12-01 2018-06-07 Stmicroelectronics (Crolles 2) Sas Stacked image sensor with interconnects made of doped semiconductor material

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590471A (en) * 1969-02-04 1971-07-06 Bell Telephone Labor Inc Fabrication of insulated gate field-effect transistors involving ion implantation
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
JPS5488783A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
US4559694A (en) * 1978-09-13 1985-12-24 Hitachi, Ltd. Method of manufacturing a reference voltage generator device
US4285761A (en) * 1980-06-30 1981-08-25 International Business Machines Corporation Process for selectively forming refractory metal silicide layers on semiconductor devices
US4389257A (en) * 1981-07-30 1983-06-21 International Business Machines Corporation Fabrication method for high conductivity, void-free polysilicon-silicide integrated circuit electrodes
US4558507A (en) * 1982-11-12 1985-12-17 Nec Corporation Method of manufacturing semiconductor device
US4443930A (en) * 1982-11-30 1984-04-24 Ncr Corporation Manufacturing method of silicide gates and interconnects for integrated circuits
US4569122A (en) * 1983-03-09 1986-02-11 Advanced Micro Devices, Inc. Method of forming a low resistance quasi-buried contact
KR940006668B1 (ko) * 1984-11-22 1994-07-25 가부시끼가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치의 제조방법
JPS61191070A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0287931B1 (en) 1994-07-13
DE3850599T2 (de) 1994-12-15
JPS63255965A (ja) 1988-10-24
EP0287931A3 (en) 1989-11-02
KR920000636B1 (ko) 1992-01-17
US5612236A (en) 1997-03-18
JPH0616556B2 (ja) 1994-03-02
EP0287931A2 (en) 1988-10-26
DE3850599D1 (de) 1994-08-18

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