KR890016626A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR890016626A KR890016626A KR1019890004996A KR890004996A KR890016626A KR 890016626 A KR890016626 A KR 890016626A KR 1019890004996 A KR1019890004996 A KR 1019890004996A KR 890004996 A KR890004996 A KR 890004996A KR 890016626 A KR890016626 A KR 890016626A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- layer
- polycrystalline silicon
- silicon layer
- silicide
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 반도체장치를 설명하기 위한 단면도, 제3도는 제1도에 도시된 반도체장치의 제조방법을 설명하기 위한 도면.
Claims (1)
- 동일 다결정실리콘층중에 p형영역(17a)과 n형영역(17b)이 혼재된 반도체장치에 있어서, 상기 다결정실리콘층상에 상기 다결정실리콘층으로의 불순물의 확산계수가 실리사이드보다 작은 도전체층(18)이 형성되고, 이 도전체층(18)상에 실리사이드층(19)이 형성된 것을 특징으로 하는 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-93111 | 1988-04-15 | ||
JP88-93111 | 1988-04-15 | ||
JP63093111A JPH01265542A (ja) | 1988-04-15 | 1988-04-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890016626A true KR890016626A (ko) | 1989-11-29 |
KR930002283B1 KR930002283B1 (ko) | 1993-03-29 |
Family
ID=14073414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890004996A KR930002283B1 (ko) | 1988-04-15 | 1989-04-15 | 반도체장치 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0337481B1 (ko) |
JP (1) | JPH01265542A (ko) |
KR (1) | KR930002283B1 (ko) |
DE (1) | DE68917971T2 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5355010A (en) * | 1991-06-21 | 1994-10-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide |
JP2833291B2 (ja) * | 1991-10-09 | 1998-12-09 | 日本電気株式会社 | Cmos型半導体集積回路装置 |
US5468669A (en) * | 1993-10-29 | 1995-11-21 | At&T Corp. | Integrated circuit fabrication |
US5652183A (en) * | 1994-01-18 | 1997-07-29 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device containing excessive silicon in metal silicide film |
JP3249292B2 (ja) * | 1994-04-28 | 2002-01-21 | 株式会社リコー | デュアルゲート構造の相補形mis半導体装置 |
US5543362A (en) * | 1995-03-28 | 1996-08-06 | Motorola, Inc. | Process for fabricating refractory-metal silicide layers in a semiconductor device |
US5550079A (en) * | 1995-06-15 | 1996-08-27 | Top Team/Microelectronics Corp. | Method for fabricating silicide shunt of dual-gate CMOS device |
DE19525069C1 (de) * | 1995-07-10 | 1996-10-24 | Siemens Ag | Verfahren zur Herstellung einer integrierten CMOS-Schaltung |
US6034401A (en) | 1998-02-06 | 2000-03-07 | Lsi Logic Corporation | Local interconnection process for preventing dopant cross diffusion in shared gate electrodes |
KR100399073B1 (ko) * | 2001-11-21 | 2003-09-26 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 및 그 제조방법 |
JP2017028219A (ja) * | 2015-07-28 | 2017-02-02 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62111466A (ja) * | 1985-11-09 | 1987-05-22 | Toshiba Corp | 半導体装置 |
JPH0194664A (ja) * | 1987-10-05 | 1989-04-13 | Nec Corp | 電界効果トランジスタ |
JPH01196142A (ja) * | 1988-02-01 | 1989-08-07 | Hitachi Ltd | 半導体装置 |
-
1988
- 1988-04-15 JP JP63093111A patent/JPH01265542A/ja active Pending
-
1989
- 1989-04-14 EP EP89106711A patent/EP0337481B1/en not_active Expired - Lifetime
- 1989-04-14 DE DE68917971T patent/DE68917971T2/de not_active Expired - Fee Related
- 1989-04-15 KR KR1019890004996A patent/KR930002283B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0337481B1 (en) | 1994-09-07 |
JPH01265542A (ja) | 1989-10-23 |
EP0337481A3 (en) | 1991-05-29 |
DE68917971T2 (de) | 1995-03-09 |
DE68917971D1 (de) | 1994-10-13 |
EP0337481A2 (en) | 1989-10-18 |
KR930002283B1 (ko) | 1993-03-29 |
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