KR930005234A - 쇼트키 장벽 다이오드 및 쇼트키 장벽 다이오드 클램프형 트랜지스터와 이들을 제조하는 방법 - Google Patents

쇼트키 장벽 다이오드 및 쇼트키 장벽 다이오드 클램프형 트랜지스터와 이들을 제조하는 방법 Download PDF

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Publication number
KR930005234A
KR930005234A KR1019910014120A KR910014120A KR930005234A KR 930005234 A KR930005234 A KR 930005234A KR 1019910014120 A KR1019910014120 A KR 1019910014120A KR 910014120 A KR910014120 A KR 910014120A KR 930005234 A KR930005234 A KR 930005234A
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South Korea
Prior art keywords
schottky barrier
making
methods
barrier diode
diode clamped
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KR1019910014120A
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English (en)
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KR100200059B1 (ko
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드롱 밴처드
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존 지.웨브
내쇼날 세미컨덕터 코포레이션
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Publication of KR930005234A publication Critical patent/KR930005234A/ko
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Publication of KR100200059B1 publication Critical patent/KR100200059B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

내용 없음.

Description

쇼트키 장벽 다이오드 및 쇼트키 장벽 다이오드 클램프형 트랜지스터와 이들을 제조하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 쇼트키 장벽 다이오드(SBD)및 쇼트키 장벽 다이오드 클램프형 NPN 바이폴라 트랜지스터를 각각 도시한 집적회로에 대한 부분 단면도,
제2A도 내지 제2K도는 제1도에 도시된 형태의 집적회로를 제조하는 공정단계에 대한 예시도,
제3도는 본 발명에 따라 형성된 쇼트키 다이오드에 대한 Vfwd대 F(Vfwd)의 노즈(hordes)플로트.

Claims (1)

  1. 상부 표면을 지니는 n-형으로 도우핑된 실리콘층, 상기 n-형으로 도우핑된 실리콘층의 상부 표면에 인접하며 상부 표면을 지니는 진성 폴리실리콘층, 상기 진성 폴리실리콘층의 상부 표면에 인접한 메탈 실리사이드(metal silicide)층, 상기 n형으로 도우핑된 실리콘층에 전기 접속부분을 제공하는 제1접촉수단을 포함하는 쇼트키 장벽 다이오드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910014120A 1990-08-17 1991-08-16 쇼트키 장벽 다이오드 및 쇼트키 장벽 다이오드 클램프형 트랜지스터와 이들을 제조하는 방법 KR100200059B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US569,789 1990-07-17
US07/569,789 US5109256A (en) 1990-08-17 1990-08-17 Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication

Publications (2)

Publication Number Publication Date
KR930005234A true KR930005234A (ko) 1993-03-23
KR100200059B1 KR100200059B1 (ko) 1999-07-01

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KR1019910014120A KR100200059B1 (ko) 1990-08-17 1991-08-16 쇼트키 장벽 다이오드 및 쇼트키 장벽 다이오드 클램프형 트랜지스터와 이들을 제조하는 방법

Country Status (3)

Country Link
US (1) US5109256A (ko)
JP (1) JP3232111B2 (ko)
KR (1) KR100200059B1 (ko)

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US7969776B2 (en) 2008-04-03 2011-06-28 Micron Technology, Inc. Data cells with drivers and methods of making and operating the same
US7981736B2 (en) 2008-03-20 2011-07-19 Micron Technology, Inc. Systems and devices including multi-gate transistors and methods of using, making, and operating the same
US8076229B2 (en) 2008-05-30 2011-12-13 Micron Technology, Inc. Methods of forming data cells and connections to data cells
US8149619B2 (en) 2008-03-20 2012-04-03 Micron Technology, Inc. Memory structure having volatile and non-volatile memory portions
US8148776B2 (en) 2008-09-15 2012-04-03 Micron Technology, Inc. Transistor with a passive gate
US8416610B2 (en) 2008-02-19 2013-04-09 Micron Technology, Inc. Systems and devices including local data lines and methods of using, making, and operating the same
US8546876B2 (en) 2008-03-20 2013-10-01 Micron Technology, Inc. Systems and devices including multi-transistor cells and methods of using, making, and operating the same
US8669159B2 (en) 2008-03-06 2014-03-11 Micron Technologies, Inc. Devices with cavity-defined gates and methods of making the same
US8810310B2 (en) 2010-11-19 2014-08-19 Micron Technology, Inc. Vertically stacked fin transistors and methods of fabricating and operating the same
US8866254B2 (en) 2008-02-19 2014-10-21 Micron Technology, Inc. Devices including fin transistors robust to gate shorts and methods of making the same
US9190494B2 (en) 2008-02-19 2015-11-17 Micron Technology, Inc. Systems and devices including fin field-effect transistors each having U-shaped semiconductor fin

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JP4213776B2 (ja) * 1997-11-28 2009-01-21 光照 木村 Ｍｏｓゲートショットキートンネルトランジスタおよびこれを用いた集積回路
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ATE511701T1 (de) 2000-03-03 2011-06-15 Nxp Bv Verfahren zur herstellung einer schottky varicap diode
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190494B2 (en) 2008-02-19 2015-11-17 Micron Technology, Inc. Systems and devices including fin field-effect transistors each having U-shaped semiconductor fin
US9087721B2 (en) 2008-02-19 2015-07-21 Micron Technology, Inc. Devices including fin transistors robust to gate shorts and methods of making the same
US8866254B2 (en) 2008-02-19 2014-10-21 Micron Technology, Inc. Devices including fin transistors robust to gate shorts and methods of making the same
US8416610B2 (en) 2008-02-19 2013-04-09 Micron Technology, Inc. Systems and devices including local data lines and methods of using, making, and operating the same
US8669159B2 (en) 2008-03-06 2014-03-11 Micron Technologies, Inc. Devices with cavity-defined gates and methods of making the same
US9331203B2 (en) 2008-03-06 2016-05-03 Micron Technology, Inc. Devices with cavity-defined gates and methods of making the same
US8450785B2 (en) 2008-03-20 2013-05-28 Micron Technology, Inc. Systems and devices including multi-gate transistors and methods of using, making, and operating the same
US8546876B2 (en) 2008-03-20 2013-10-01 Micron Technology, Inc. Systems and devices including multi-transistor cells and methods of using, making, and operating the same
US8759889B2 (en) 2008-03-20 2014-06-24 Micron Technology, Inc. Systems and devices including multi-gate transistors and methods of using, making, and operating the same
US8149619B2 (en) 2008-03-20 2012-04-03 Micron Technology, Inc. Memory structure having volatile and non-volatile memory portions
US7981736B2 (en) 2008-03-20 2011-07-19 Micron Technology, Inc. Systems and devices including multi-gate transistors and methods of using, making, and operating the same
US7969776B2 (en) 2008-04-03 2011-06-28 Micron Technology, Inc. Data cells with drivers and methods of making and operating the same
US8076229B2 (en) 2008-05-30 2011-12-13 Micron Technology, Inc. Methods of forming data cells and connections to data cells
US8148776B2 (en) 2008-09-15 2012-04-03 Micron Technology, Inc. Transistor with a passive gate
US8810310B2 (en) 2010-11-19 2014-08-19 Micron Technology, Inc. Vertically stacked fin transistors and methods of fabricating and operating the same

Also Published As

Publication number Publication date
JPH04359566A (ja) 1992-12-11
US5109256A (en) 1992-04-28
KR100200059B1 (ko) 1999-07-01
JP3232111B2 (ja) 2001-11-26

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