KR910003807A - 수직공핍 mos 트랜지스터와 제너다이오드로 구성되는 vdmos/논리집적회로 - Google Patents

수직공핍 mos 트랜지스터와 제너다이오드로 구성되는 vdmos/논리집적회로 Download PDF

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KR910003807A
KR910003807A KR1019900010728A KR900010728A KR910003807A KR 910003807 A KR910003807 A KR 910003807A KR 1019900010728 A KR1019900010728 A KR 1019900010728A KR 900010728 A KR900010728 A KR 900010728A KR 910003807 A KR910003807 A KR 910003807A
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transistor
region
vdmos
integrated circuit
depletion
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KR1019900010728A
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방칼 베스나르
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삐에르 올리비에
에스지에스-톰슨 마이크로일렉트로닉스 에스.에이.
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Publication of KR910003807A publication Critical patent/KR910003807A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음.

Description

수직공핍 MOS 트랜지스터와 제너다이오드로 구성되는 VDMOS/논리집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따라 구성요소가 실현된 집적회로칩의 부분단면도,
제3도 및 제4도는 향상된 파워 트랜지스터와 부하의 종래의 연결모드를 보인 도면.

Claims (5)

  1. VDMOS트랜지스터(1) 형태의 파워요소와 공핍 가로 MOS트랜지스터(2) 및 향상된 가로 MOS트랜지스터(3)로 구성되는 논리요소를 포함하는 집적회로에 있어서, N/N+에피택셜 기판(10, 11)내에서, - 논리 트랜지스터가 형성되는 웰(12)에 해당하는 지역을 제공하는 제1P형 도핑단계와, - 저항접촉부(17, 18)의 설치를 가능케하는 높은 도핑레벨을 갖춘 2차 P형 도핑단계와, -공핍 MOS트랜지스터의 채널 영역(13)을 형성하는 3차 N형 도핑단계와, -VDMOS트랜지스터의 채널 영역에 해당하는 영역(30)을 형성하는 4차 P형 도핑단계와, - 저항 접촉부 (32-36)의 형성을 가능케 하는 높은 도핑레벨을 갖는 5차 N형 도핑단계와, - 에칭을 통해 여러 금속화 영역을 형성하는 단일금속층화단계로 구성되는 기술적이 공정을 통해 실현되며, 3차 도핑단계에서 얻어지는 N형 채널영역(62)과 1차 도핑단계에서 얻어지는 P웰(61)과 5차 도핑단계에서 얻어지는 N+소오스영역(64, 65)으로 이루어지고, 향상된 VDMOS트랜지스터(1)와 공통되는 드레인을 구비하는 N채널 공핍 VDMOS트랜지스터(60)을 추가로 구성함을 특징으로 하는 집적회로.
  2. 제1항에 있어서, 4차 도핑단계에서 얻어지는 P영역내에서 형성되고 5차 도핑단계에서 N+영역으로 구성되는 제너다이오드(70)를 또한 구성함을 특징으로 하는 집적회로.
  3. 제2항에 있어서, 제너다이오드의 P영역이 기판의 N형 에피택셜층내에 형성됨을 특징으로 하는 집적회로.
  4. 제2항에 있어서, 제너다이오드의 P영역이 2차 도핑단계에서 얻어지는 공핍 VDMOS트랜지스터용 웰을 형성하기 위해 연장되는 영역내에서 형성됨을 특징을 하는 집적회로.
  5. 수직확산 MOS(VDMOS) 트랜지스터(1) 형태의 파워요소와 공핍가로 MOS트랜지스터(2) 및 향상된 가로 MOS트랜지스터(3)의 논리요소를 포함하는 집적회로가 있어서, 향상된 VDMOS트랜지스터와 공통되는 드레인을 구비하는 공핍 VDMOS트랜지스터(60)와 음극이 VDMOS 트랜지스터의 소오스에 연결되고 양극은 상기 공핍 VDMOS트랜지스터의 게이트와 기판에 연결되는 제너다이오드를 직렬연결함으로써 얻어지는 내부전압기준을 추가로 구성함을 특징으로 하는 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900010728A 1989-07-17 1990-07-14 수직공핍 mos 트랜지스터와 제너다이오드로 구성되는 vdmos/논리집적회로 KR910003807A (ko)

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Application Number Priority Date Filing Date Title
FR8909911A FR2649828B1 (fr) 1989-07-17 1989-07-17 Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
FR89/09911 1989-07-17

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US (1) US5045902A (ko)
EP (1) EP0409746B1 (ko)
JP (1) JPH0357267A (ko)
KR (1) KR910003807A (ko)
DE (1) DE69030791T2 (ko)
FR (1) FR2649828B1 (ko)

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Publication number Publication date
EP0409746B1 (fr) 1997-05-28
DE69030791T2 (de) 1998-01-08
FR2649828B1 (fr) 1991-10-31
DE69030791D1 (de) 1997-07-03
EP0409746A1 (fr) 1991-01-23
FR2649828A1 (fr) 1991-01-18
US5045902A (en) 1991-09-03
JPH0357267A (ja) 1991-03-12

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