KR100800252B1 - 씨모스 공정을 이용한 다이오드 소자의 제조 방법 - Google Patents
씨모스 공정을 이용한 다이오드 소자의 제조 방법 Download PDFInfo
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- KR100800252B1 KR100800252B1 KR1020020011682A KR20020011682A KR100800252B1 KR 100800252 B1 KR100800252 B1 KR 100800252B1 KR 1020020011682 A KR1020020011682 A KR 1020020011682A KR 20020011682 A KR20020011682 A KR 20020011682A KR 100800252 B1 KR100800252 B1 KR 100800252B1
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- conductivity type
- diode
- well
- high concentration
- conductive
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000012535 impurity Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (2)
- 다이오드 소자의 제조 방법에 있어서:제 1 도전형 반도체 기판에 제 2 도전형의 웰을 형성하는 단계와;상기 제 2 도전형 웰에 상기 다이오드 소자의 애노드 및 캐소드 영역을 정의하기 위한 제 1 도전형 및 제 2 도전형 웰을 형성하는 단계와;상기 제 1 도전형 웰에 제 2 도전형 드리프트 영역을 형성하는 단계와;상기 애노드, 캐소드 영역을 소자 분리하기 위한 필드 산화막을 형성하는 단계와;상기 제 1 도전형 웰 내에 고농도 제 1 도전형 불순물을 이온을 주입하여 고농도의 제 1 도전형 불순물 영역들을 형성하고, 상기 드리프트 영역과 상기 제 2 도전형 웰 내에 고농도 제 2 도전형 불순물을 이온 주입하여 고농도의 제 2 도전형 불순물 영역들을 형성하는 단계 및;상기 제 1 및 제 2 도전형 불순물 영역들을 상기 다이오드의 애노드 및 캐소드 전극을 위한 금속 배선을 형성하는 단계를 포함하는 것을 특징으로 하는 다이오드 소자의 제조 방법.
- 제 1 항에 있어서,상기 금속 배선을 형성하는 단계는;상기 드리프트 영역의 상기 제 2 도전형 불순물 영역은 상기 캐소드 전극으 로 형성하고,상기 제 1 도전형 웰의 상기 제 1 도전형 불순물 영역과, 상기 제 2 도전형 웰의 상기 제 2 도전형 불순물 영역들은 상기 애노드 전극으로 형성되도록 상기 금속 배선을 연결시키는 것을 특징으로 하는 다이오드 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020011682A KR100800252B1 (ko) | 2002-03-05 | 2002-03-05 | 씨모스 공정을 이용한 다이오드 소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020011682A KR100800252B1 (ko) | 2002-03-05 | 2002-03-05 | 씨모스 공정을 이용한 다이오드 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20030072113A KR20030072113A (ko) | 2003-09-13 |
KR100800252B1 true KR100800252B1 (ko) | 2008-02-01 |
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KR1020020011682A KR100800252B1 (ko) | 2002-03-05 | 2002-03-05 | 씨모스 공정을 이용한 다이오드 소자의 제조 방법 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5132077B2 (ja) * | 2006-04-18 | 2013-01-30 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4766469A (en) * | 1986-01-06 | 1988-08-23 | Siliconix Incorporated | Integrated buried zener diode and temperature compensation transistor |
JPH06104459A (ja) * | 1992-09-21 | 1994-04-15 | Sanken Electric Co Ltd | 半導体装置 |
US5629558A (en) * | 1994-05-31 | 1997-05-13 | Sgs-Thomson Microelectronics, S.Rl | Semiconductor diode integrated with bipolar/CMOS/DMOS technology |
JPH10116920A (ja) * | 1996-10-11 | 1998-05-06 | Nec Corp | 半導体装置 |
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2002
- 2002-03-05 KR KR1020020011682A patent/KR100800252B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4766469A (en) * | 1986-01-06 | 1988-08-23 | Siliconix Incorporated | Integrated buried zener diode and temperature compensation transistor |
JPH06104459A (ja) * | 1992-09-21 | 1994-04-15 | Sanken Electric Co Ltd | 半導体装置 |
US5629558A (en) * | 1994-05-31 | 1997-05-13 | Sgs-Thomson Microelectronics, S.Rl | Semiconductor diode integrated with bipolar/CMOS/DMOS technology |
JPH10116920A (ja) * | 1996-10-11 | 1998-05-06 | Nec Corp | 半導体装置 |
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KR20030072113A (ko) | 2003-09-13 |
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