KR870003561A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR870003561A KR870003561A KR1019860008071A KR860008071A KR870003561A KR 870003561 A KR870003561 A KR 870003561A KR 1019860008071 A KR1019860008071 A KR 1019860008071A KR 860008071 A KR860008071 A KR 860008071A KR 870003561 A KR870003561 A KR 870003561A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive layer
- layer
- thin film
- semiconductor device
- polysilicon
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2 도는 제 1 도의 하부도전층이 얇은 경우에 접합영역에서 발생되는 결함을 나타낸 단면도.
제 3 도는 본 발명의 반도체장치에 따른 일실시예를 나타낸 단면도이다.
* 도면의 주요부분에 대한 부호의 설명
1,11 : 반도체기판 2,12 : 절연막
3,3A : 제 1 도전층 4,15 : 절연층
5,5A : 제 2 도전층 6 : 접합부
13 : 다결정실리콘도전층 14 : 박막 제 1 도전층
16 : Al도선층
Claims (5)
- 반도체기판(11)과, 상기 반도체기판(11)상에 형성된 제 1 절연막(12), 상기 제1절연막(12)상에 형성된 다결정실리콘도전층(13)과 박막 제1도전층(14), 상기 다결정실리콘도전층(13)과 박막 제1도전층(14)에 도달되게 접합영역에 형성된 접합구, 상기 제1절연막(12)과 다결정실리콘도전층(13) 및 박막 제1도전층(14)상에 형성된 제 2 절연층(15) 및, 상기 다결정실리콘도전층(13)과 박막 제1도전층(14) 및 절연층(15)상에 형성된 도선층(16)을 구비하면서 접합영역에서 상기 제1절연막(12)상에 다결정실리콘도전층(13)이 형성되고, 상기 제1절연막(12)과 다결정실리콘도전층(13)상에 박막 제1도전층(14)이 형성된 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서, 다결정실리콘도전층(13)과 박막 제1도전층(14) 및 도선층(16)이 실리콘과 다결정실리콘, 비정질실리콘, 단결정실리콘, 텅스텐, 몰리브덴, 몰리브덴실리사이드 및 다결정실리콘/MOSi2의 2중층구조중 선택된 재료로 구성된 것을 특징으로 하는 반도체장치.
- 제2항에 있어서, 다결정실리콘도전층(13)이 박막 제1도전층(14)과 도선층(16)에 대해서 양호한 저항성접합 특성을 갖는 재료로 구성된 것을 특징으로 하는 반도체장치.
- 제 2 항에 있어서, 박막제1도전층(14)이 도선층(16)과 양호한 저항성접합특성을 갖는 재료로 구성된것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서, 다결정실리콘도전층(13)과 박막제1도전층(14) 및 도선층(16)중 적어도 2개가 같은 형의 불순물이 주입된 실리콘층으로 구성된 것을 특징으로 하는 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60-216594 | 1985-09-30 | ||
JP60216594A JPS6276653A (ja) | 1985-09-30 | 1985-09-30 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870003561A true KR870003561A (ko) | 1987-04-18 |
KR900002084B1 KR900002084B1 (ko) | 1990-03-31 |
Family
ID=16690865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860008071A KR900002084B1 (ko) | 1985-09-30 | 1986-09-26 | 반도체장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4754318A (ko) |
EP (1) | EP0220517B1 (ko) |
JP (1) | JPS6276653A (ko) |
KR (1) | KR900002084B1 (ko) |
DE (1) | DE3676942D1 (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63268258A (ja) * | 1987-04-24 | 1988-11-04 | Nec Corp | 半導体装置 |
JPH0680733B2 (ja) * | 1987-11-12 | 1994-10-12 | 株式会社東芝 | 半導体装置の配線接続部 |
JPH02105519A (ja) * | 1988-10-14 | 1990-04-18 | Nec Corp | 半導体集積回路の製造方法 |
JPH04212426A (ja) * | 1990-06-21 | 1992-08-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH0465167A (ja) * | 1990-07-05 | 1992-03-02 | Mitsubishi Electric Corp | 半導体装置 |
US5243219A (en) * | 1990-07-05 | 1993-09-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having impurity diffusion region formed in substrate beneath interlayer contact hole |
KR940000504B1 (ko) * | 1991-03-20 | 1994-01-21 | 삼성전자 주식회사 | 반도체장치의 층간콘택구조 및 그 제조방법 |
JPH05267621A (ja) * | 1991-12-27 | 1993-10-15 | Nippon Steel Corp | 半導体装置のコンタクト構造及びその製造方法 |
JP2944840B2 (ja) * | 1993-03-12 | 1999-09-06 | 株式会社日立製作所 | 電力用半導体装置 |
KR0138308B1 (ko) | 1994-12-14 | 1998-06-01 | 김광호 | 층간접촉구조 및 그 방법 |
KR0161379B1 (ko) * | 1994-12-23 | 1999-02-01 | 윤종용 | 반도체 소자의 다층배선 및 그 제조방법 |
WO1996027901A1 (en) | 1995-03-07 | 1996-09-12 | Micron Technology, Inc. | Improved semiconductor contacts to thin conductive layers |
US5966592A (en) * | 1995-11-21 | 1999-10-12 | Tessera, Inc. | Structure and method for making a compliant lead for a microelectronic device |
TW409194B (en) | 1995-11-28 | 2000-10-21 | Sharp Kk | Active matrix substrate and liquid crystal display apparatus and method for producing the same |
JPH08236627A (ja) * | 1995-12-28 | 1996-09-13 | Nippon Precision Circuits Kk | 半導体装置の製造方法 |
US6331680B1 (en) * | 1996-08-07 | 2001-12-18 | Visteon Global Technologies, Inc. | Multilayer electrical interconnection device and method of making same |
TW375805B (en) * | 1997-04-14 | 1999-12-01 | Nanya Technology Co Ltd | Process for preparing contact window in the semiconductor device and its structure |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7302767A (ko) * | 1973-02-28 | 1974-08-30 | ||
JPS5810855B2 (ja) * | 1975-01-29 | 1983-02-28 | 株式会社日立製作所 | タソウハイセンコウゾウノセイホウ |
US4110776A (en) * | 1976-09-27 | 1978-08-29 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
US4172004A (en) * | 1977-10-20 | 1979-10-23 | International Business Machines Corporation | Method for forming dense dry etched multi-level metallurgy with non-overlapped vias |
US4259366A (en) * | 1978-09-25 | 1981-03-31 | Ibm Corporation | Fabrication method for forming FET gate electrode |
US4227944A (en) * | 1979-06-11 | 1980-10-14 | General Electric Company | Methods of making composite conductive structures in integrated circuits |
US4316200A (en) * | 1980-03-07 | 1982-02-16 | International Business Machines Corporation | Contact technique for electrical circuitry |
JPS58215055A (ja) * | 1982-06-08 | 1983-12-14 | Nec Corp | 半導体集積回路装置 |
GB2137808A (en) * | 1983-04-06 | 1984-10-10 | Plessey Co Plc | Integrated circuit processing method |
US4507852A (en) * | 1983-09-12 | 1985-04-02 | Rockwell International Corporation | Method for making a reliable ohmic contact between two layers of integrated circuit metallizations |
JPS60136337A (ja) * | 1983-12-22 | 1985-07-19 | モノリシツク・メモリ−ズ・インコ−ポレイテツド | 2重層処理においてヒロツク抑制層を形成する方法及びその構造物 |
JPS60138940A (ja) * | 1983-12-27 | 1985-07-23 | Toshiba Corp | 半導体装置の製造方法 |
-
1985
- 1985-09-30 JP JP60216594A patent/JPS6276653A/ja active Pending
-
1986
- 1986-09-26 KR KR1019860008071A patent/KR900002084B1/ko not_active IP Right Cessation
- 1986-09-29 US US06/912,536 patent/US4754318A/en not_active Expired - Lifetime
- 1986-09-30 EP EP86113404A patent/EP0220517B1/en not_active Expired - Lifetime
- 1986-09-30 DE DE8686113404T patent/DE3676942D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0220517A2 (en) | 1987-05-06 |
EP0220517B1 (en) | 1991-01-16 |
US4754318A (en) | 1988-06-28 |
EP0220517A3 (en) | 1987-09-02 |
KR900002084B1 (ko) | 1990-03-31 |
DE3676942D1 (de) | 1991-02-21 |
JPS6276653A (ja) | 1987-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR870003561A (ko) | 반도체장치 | |
KR890003036A (ko) | 반도체장치 | |
KR950004494A (ko) | 안티퓨즈소자를 갖춘 반도체장치 및 에프피지에이(fpga)의 제조방법 | |
KR940010352A (ko) | 반도체기억장치 | |
KR850006649A (ko) | 반도체 장치 | |
KR850000775A (ko) | 에칭기술 | |
KR870011683A (ko) | 프로그램 가능한 저 임피던스 상호 접속회로 소자 | |
KR900019264A (ko) | 분리 금속 플레이트 캐패시터 및 이의 제조방법 | |
KR970023863A (ko) | 반도체장치 및 그 제조방법 | |
KR870000761A (ko) | 반도체 장치 및 그 제조방법 | |
EP0173245B1 (en) | Semiconductor memory device having a polycrystalline silicon layer | |
KR840002162A (ko) | 반도체 장치(半導體裝置) | |
KR950028136A (ko) | 반도체 장치 및 그 제조방법 | |
KR950004608A (ko) | 프로그램가능한 안티-퓨즈 소자(Antifuse element) 및 그 제조방법 | |
KR900004026A (ko) | 반도체 소자 및 그 제조방법 | |
KR890016626A (ko) | 반도체장치 | |
KR900008658A (ko) | 반도체 장치 | |
KR890008949A (ko) | 반도체장치 및 그 제조방법 | |
KR930020561A (ko) | 반도체 집적 회로 장치의 제조방법 | |
KR930011279A (ko) | 반도체장치의 도전층접속구조 및 그 제조방법 | |
KR920005537B1 (ko) | 전계효과형 트랜지스터 | |
KR930001468A (ko) | 반도체 장치 | |
KR840008213A (ko) | 반도체 장치 | |
KR910003783A (ko) | 반도체장치 및 그 제조방법 | |
KR900702571A (ko) | 반도체 장치 및 반도체 기억장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030228 Year of fee payment: 14 |
|
LAPS | Lapse due to unpaid annual fee |