KR940010352A - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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KR940010352A
KR940010352A KR1019930002646A KR930002646A KR940010352A KR 940010352 A KR940010352 A KR 940010352A KR 1019930002646 A KR1019930002646 A KR 1019930002646A KR 930002646 A KR930002646 A KR 930002646A KR 940010352 A KR940010352 A KR 940010352A
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transistor
electrode
semiconductor memory
channel region
base layer
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KR1019930002646A
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KR100306095B1 (ko
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에이. 메이주어 카를로스
테일러 피치 존
디. 하이든 제임스
이. 위텍 카이드
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빈센트 비. 인그라시아
모토로라 인코포레이티드
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Priority to US07/966,643 priority patent/US5308782A/en
Application filed by 빈센트 비. 인그라시아, 모토로라 인코포레이티드 filed Critical 빈센트 비. 인그라시아
Publication of KR940010352A publication Critical patent/KR940010352A/ko
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Publication of KR100306095B1 publication Critical patent/KR100306095B1/ko

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666Vertical transistors
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    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221Three dimensional integrated circuits stacked in different levels
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
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    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827Vertical transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar

Abstract

본 발명의 반도체기억장치는 기층(12)을 구비하여 형성된다. 기층(2)내에는 확산부 (14)가 형성된다. 제1수직트랜지스터중첩(122)이 형성된다. 제2수직트랜지스터 중첩(124)이 형성된다. 제1수직트랜지스터중첩(122)은 트랜지스터(100)와 그 위에 트랜지스터(104)를 구비한다. 제2수직트랜지스터중첩(124)은 트랜지스터(102)와 그 위의 트랜지스터(106)를 구비한다. 두개의 트랜지스터(100,104)는 시리즈로 연결되며 또다른 두개의 트랜지스터(102,106)도 시리즈로 연결된다. 양호한 형태에서 두개의 트랜지스터(100,102)는 반도체기억장치용 래치트랜지스터로서 전기 접속되며 또다른 두개의 트랜지스터(104,105)는 패스트랜지스터로서 접속된다. 두개의 수직중첩(126,128)은 반도채 기억장치용의 전기적 상호접속부(118,120)와 레지스티브장치(134,138)를 형성한다.

Description

반도체기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제4도는 반도체기억장치에 이용되는 트랜지스터와 본 발명에 따른 형성방법을 도시하는 단면도.

Claims (5)

  1. 반도체기억장치에 있어서, 표면을 갖는 기층(12)과, 기층(12)의 표면을 적어도 부분적으로 뒤덮으며 제1전극(28)과 제1전극(28)의 위에 있는 제2전극(32)과 제1 및 제2전극(28,32)의 사이에 있는 채널구역(30) 및 채널구역(30)에 인접한 적어도 하나 이상의 게이트전극(120)을 구비하는 제1트랜지스터(100)와, 제1트랜지스터(100)를 뒤덮으며 제1전극(50)과 제1전극(50)의 위에 있는 제2전극(54)과 제1 및 제2전극(50,54)의 사이에 있는 제2전극(54)과 제1 및 제2전극(50,54)의 사이에 있는 채널구역(52) 및 채널구역(52)에 인접한 적어도 하나 이상의 게이트 전극(40)을 구비하는 제2트랜지스터(104) 및, 제1 및 제2트랜지스터(100,104)를 상기 반도체 기억장치의 제1 및 제2노드의 사이에 시리즈로 연결하기위해 제1트랜지스터(100)와 제2트랜지스터(104) 모두에 커플링된 전기적 상호접속부(118,120,131,14)를 포함하는 것을 특징으로 하는 반도체기억장치.
  2. 제1항에 있어서, 기층의 표면을 적어도 부분적으로 뒤덮으며 제1전극과 제1전극의 위에 있는 제2전극과 제1 및 제2전극의 사이에 있는 채널구역 및 채널구역에 인접한 적어도 하나 이상의 게이트전극(118)을 구비하는 제3트랜지스터(102)와, 제3트렌지스터(102)를 뒤덮으며 제1전극과 제1전극의 위에 있는 제2전극과 제1 및 제2전극의 사이에 있는 채널구역 및 채널구역에 인접한 적어도 하나 이상의 게이트전극(40)을 구비하는 제4트랜지스터(106) 및, 제3 및 제4트랜지스터(102,106)를 제1트랜지스터(106)나 또는 제2트랜지스터(104) 중의 하나에 커플링하는 전기적 상호접속재료(131,120,118 또는 14)를 포함하는 것을 특징으로 하는 반도체기억장치.
  3. 제1항에 있어서, 기층(12)이 기층내에서 제1트랜지스터의 아래에 놓이는 확산구역 (14)을 부가적으로 포함하는 것을 에칭으로 하는 반도체기억장치.
  4. 제3항에 있어서, 확산구역(14)이 확산구역에 인접한 실리사이드구역을 부가적으로 포함하는 것을 특징으로하는 반도체기억장치.
  5. 제1항에 있어서, 제1트랜지스터(100)가 도전성 상호접속부(118,136)를 거쳐 레지스티브장치(135)에 커플링된 것을 특징으로 하는 반도체기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930002646A 1992-03-02 1993-02-25 반도체기억장치 KR100306095B1 (ko)

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Application Number Priority Date Filing Date Title
US84408892A true 1992-03-02 1992-03-02
US966,643 1992-10-26
US07/966,643 US5308782A (en) 1992-03-02 1992-10-26 Semiconductor memory device and method of formation

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KR940010352A true KR940010352A (ko) 1994-05-26
KR100306095B1 KR100306095B1 (ko) 2001-12-15

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US5308778A (en) 1994-05-03
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US5308782A (en) 1994-05-03
KR100296831B1 (ko) 2001-10-22
KR930020661A (ko) 1993-10-20
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