KR850006649A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR850006649A
KR850006649A KR1019850001642A KR850001642A KR850006649A KR 850006649 A KR850006649 A KR 850006649A KR 1019850001642 A KR1019850001642 A KR 1019850001642A KR 850001642 A KR850001642 A KR 850001642A KR 850006649 A KR850006649 A KR 850006649A
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KR
South Korea
Prior art keywords
semiconductor device
conductive layer
region
layer
copper
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KR1019850001642A
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English (en)
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KR900007905B1 (ko
Inventor
다까시 이또오 (외 2)
Original Assignee
야마모또 다꾸마
후지쓰 가부시끼가이샤
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Application filed by 야마모또 다꾸마, 후지쓰 가부시끼가이샤 filed Critical 야마모또 다꾸마
Publication of KR850006649A publication Critical patent/KR850006649A/ko
Application granted granted Critical
Publication of KR900007905B1 publication Critical patent/KR900007905B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4941—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 실시예에 해당하는 반도체 장치의 제작방법에 관한 단면도.
* 도면의 주요부분에 대한 부호의 설명
4 : 하전도층 5 : 장벽층
6 : 상전도층

Claims (7)

  1. 상전도층 및 반응방지용으로 사용된 장벽층을 사이에 두고 동(動) 영역과 접촉해 있는 하전도층을 포함하고 상기 장벽층이 터널 전류의 흐름을 위해 충분히 얇은 두께를 갖는 절연막으로 구성되는 것을 특징으로 하는 전극 배선층을 가진 반도체 장치.
  2. 제1항에 있어서, 상기 동영역이 MIS 반도체 장치의 게이트 부분에서 게이트 절연막 영역인 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 장벽층이 실리콘 질화물막으로 구성되는 것을 특징으로 하는 반도체 장치.
  4. 제1항에 있어서, 상기 하전도층이 다결정 실리콘으로 구성되고 상기 상전도층이 고융점 금속 또는 그것의 규화물로 구성되는 것을 특징으로 하는 반도체 장치.
  5. 제4항에 있어서, 상기 장벽층이 다결정 실리콘으로 구성되는 하전도층 표면의 진접 질화물막으로 구성되는 것을 특징으로 하는 반도체 장치.
  6. 제1항에 있어서, 상기 동영역은 저항전극이 배열되고 상기 하전도층이 동층과 저항 접촉되어 있는 반도체 영역으로 구성되는 것을 특징으로 하는 반도체 장치.
  7. 제1항에 있어서, 상기 동영역은 정류 전극이 배열되고 상기 하전도층이 동영역과 정류 접촉해 있는 반도체 영역으로 구성되는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850001642A 1984-03-19 1985-03-14 반도체장치 KR900007905B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP51205 1984-03-19
JP59051205A JPH0673375B2 (ja) 1984-03-19 1984-03-19 半導体装置の製造方法
JP59-51205 1984-03-19

Publications (2)

Publication Number Publication Date
KR850006649A true KR850006649A (ko) 1985-10-14
KR900007905B1 KR900007905B1 (ko) 1990-10-22

Family

ID=12880393

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850001642A KR900007905B1 (ko) 1984-03-19 1985-03-14 반도체장치

Country Status (6)

Country Link
US (1) US4935804A (ko)
EP (1) EP0168125B1 (ko)
JP (1) JPH0673375B2 (ko)
KR (1) KR900007905B1 (ko)
CA (1) CA1228680A (ko)
DE (1) DE3578273D1 (ko)

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Also Published As

Publication number Publication date
KR900007905B1 (ko) 1990-10-22
JPH0673375B2 (ja) 1994-09-14
EP0168125B1 (en) 1990-06-13
EP0168125A1 (en) 1986-01-15
CA1228680A (en) 1987-10-27
DE3578273D1 (de) 1990-07-19
US4935804A (en) 1990-06-19
JPS60195975A (ja) 1985-10-04

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