KR840002162A - 반도체 장치(半導體裝置) - Google Patents

반도체 장치(半導體裝置) Download PDF

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Publication number
KR840002162A
KR840002162A KR1019820004754A KR820004754A KR840002162A KR 840002162 A KR840002162 A KR 840002162A KR 1019820004754 A KR1019820004754 A KR 1019820004754A KR 820004754 A KR820004754 A KR 820004754A KR 840002162 A KR840002162 A KR 840002162A
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insulating film
film
electrode
emitter
semiconductor device
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KR1019820004754A
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KR900003835B1 (ko
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가쯔오(외 6) 나가사도
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미쓰다 가쓰시게
가부시기 가이샤 히다찌세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 장치(半導體裝置)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 하나의 실시예의 주요부의 단면 구조를 나타내는 그림.

Claims (9)

  1. 반도체 기판의 표면영역내에 형성된 복수개의 구멍이 있는 제1의 절연막과, 그 제1의 절연막의 소정의 전기 구멍 부분에다 형성된 에미터와 베이스, 그리고 콜렉터와 상기의 베이스의 측면부에 접촉되어 상기의 제1의 절연막의 소정의 영역위에 형성된다. 결정실리콘막과, 상기 제1의 절연막의 다른 구멍 부분에서 상기 반도체 기판과 접속된 콜렉터 전극과, 상기 다결정 실리콘막과 이 다결정 실리콘막의 근방에 있는 상기 제1의 절연막위에 피착되어 복수개의 구멍이 있는 제2의 절연막과, 이 제2의 절연막의 소정의 구멍부에서 상기 다결정 실리콘막과 접속되는 베이스 전극과, 상기 제2의 절연막의 다른 구멍부에서 상기의 에미터와 접속하는 전극을 구비하고, 상기의 콜렉터 전극과 상기의 반도체 기판과의 사이에는 저 저항의 반도체층을 개재시키고, 상기 제1의 절연체층의 노출된 표면위에는 제3의 절연막이 형성되어 있는 반도체 장치.
  2. 상기의 에미터 전극과, 상기의 베이스 전극, 그리고 상기의 콜렉터 전극의 윗면이 실질적으로 동일평면에 있는 특허청구 범위1의 반도체 장치.
  3. 특허청구의 범위1 또는 특허청구의 범위 2에서 상기의 제2와 제3의 절연막이 실질적으로 동일평면상에 있는 특허청구의 범위1과 특허청구의 범위 2의 반도체 장치.
  4. 특허청구의 범위 1, 또는 특허청구의 범위 2에서 상기의 에미터와 상기의 에미터 전극과의 사이에 다결정 실리콘막이 개재하고 있는 특허청구의 범위 1과 특허청구의 범위 2의 반도체 장치.
  5. 특허청구의 범위 1 또는 특허청구의 범위 2에서 상기의 다결정 실리콘막위에 금속 실리사이드막이 피착되어 있는 특허청구의 범위 1과 특허청구의 범위 2의 반도체 장치.
  6. 특허청구의 범위 1 또는 특허청구의 범위 2에서 상기 저 저항의 반도체층의 측면부위에 SiO2막과 Si3N4막이 있는 특허청구의 범위 1과 특허청구의 범위 2의 반도체 장치.
  7. 반도체 영역내에 형성된 복수개의 구멍이 있는 제1의 절연막과 이 제1의 절연막의 소정의 상기 구멍부에 형성된 에미터와 베이스, 그리고 콜렉터와 상기의 에미터, 그리고 상기의 콜렉터와 각각 접속되고 상기 제1의 절연막이 소정 영역위에 형성된 다결정 실리콘막과, 상기 제1의 절연막의 다른 구멍에서 상기 반도체 기판과 접속된 베이스 전극과, 상기 다결정 실리콘막과 이 다결정 실리콘막의 근방에 있는 상기 제1절연막 위에 피착시킨 복수개의 구멍을 가진 제2의 절연막과 이 제2의 절연막의 다른 구멍에서 상기의 다결정 실리콘막과 각각 접속하는 에미터 전극과 콜렉터 전극을 구비하고, 상기 베이스 전극과 상기 반도체 기판과의 사이에는 저 저항의 반도체층이 개재하고, 상기 제1의 절연막의 노출된 표면상에서 제3의 절연막이 형성되어 있는 반도체 장치.
  8. 상기의 에미터 전극과, 상기의 베이스 전극 그리고, 상기의 콜렉터 전극의 윗면이 실질적으로 동일 평면내에 있는 특허청구의 범위 7의 반도체 장치.
  9. 특허청구의 범위 7 또는 특허청구의 범위 8에서 상기 제2와 제3의 절연막의 윗면이 실질적으로 동일평면내에 있는 특허청구의 범위 7과 특허청구의 범위 8의 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8204754A 1981-10-28 1982-10-23 반도체 장치(半導體裝置) KR900003835B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56171443A JPS5873156A (ja) 1981-10-28 1981-10-28 半導体装置
JP56-171443 1981-10-28

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KR840002162A true KR840002162A (ko) 1984-06-11
KR900003835B1 KR900003835B1 (ko) 1990-06-02

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US (2) US4825281A (ko)
EP (1) EP0078501B1 (ko)
JP (1) JPS5873156A (ko)
KR (1) KR900003835B1 (ko)
CA (1) CA1195435A (ko)
DE (1) DE3279918D1 (ko)

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JPS59161867A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体装置
JPH0744182B2 (ja) * 1984-11-09 1995-05-15 株式会社日立製作所 ヘテロ接合バイポ−ラ・トランジスタ
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CA1298921C (en) * 1986-07-02 1992-04-14 Madhukar B. Vora Bipolar transistor with polysilicon stringer base contact
US5214302A (en) * 1987-05-13 1993-05-25 Hitachi, Ltd. Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove
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US6436770B1 (en) * 2000-11-27 2002-08-20 Chartered Semiconductor Manufacturing Ltd. Method to control the channel length of a vertical transistor by first forming channel using selective epi and source/drain using implantation

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Also Published As

Publication number Publication date
US5061645A (en) 1991-10-29
DE3279918D1 (en) 1989-10-05
EP0078501A2 (en) 1983-05-11
JPS5873156A (ja) 1983-05-02
US4825281A (en) 1989-04-25
KR900003835B1 (ko) 1990-06-02
EP0078501B1 (en) 1989-08-30
CA1195435A (en) 1985-10-15
EP0078501A3 (en) 1986-06-04

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