KR900019261A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR900019261A
KR900019261A KR1019900007610A KR900007610A KR900019261A KR 900019261 A KR900019261 A KR 900019261A KR 1019900007610 A KR1019900007610 A KR 1019900007610A KR 900007610 A KR900007610 A KR 900007610A KR 900019261 A KR900019261 A KR 900019261A
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KR
South Korea
Prior art keywords
region
regions
semiconductor
main
main surface
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KR1019900007610A
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English (en)
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KR940002773B1 (ko
Inventor
데츠지로 츠노다
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Publication of KR900019261A publication Critical patent/KR900019261A/ko
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Publication of KR940002773B1 publication Critical patent/KR940002773B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 IGBT의 제1실시예의 단면도, 제2도는 제1도에 도시된 IGBT의 제조공정을 설명하기 위한 단면도, 제3도는 IGBT의 래치업 전류와 다결정 실리콘 비저항과의 관계를 나타낸 특성도.

Claims (1)

  1. (a)반도체기판의 한쪽 주면에 노출되는 면을 가지며, 1층 또는 불순물농도가 다른 복수층의 1도전형 반도체층으로 이루어진 제1영역(402, 702, 202)과, (b)반도체기판의 상기 한쪽의 주면으로부터 선택적으로 형성되는 반대도 전형 반도체층으로 이루어진 제2영역(405, 705, 205), (c)제2영역의 상기 한쪽의 주면으로부터 그 영역내에 선택적으로 형성되는 1도전형 반도체형으로 이루어진 제3영역(406, 706, 806), (d)제1영역과 제3영역에 끼워지며, 상기 한쪽의 주면으로 노출되고, 또 제2영역의 표면층을 포함하는 반대도전형 반도체표면층으로 이루어진 채널형성영역(410, 710, 810), (e)상기 채널형성영역과 게이트절연막을 매개하여 대항하는 게이트전극(404, 704, 204), (f)제2 및 제3영역상에 형성되고, 또 제2영역과 오오믹접합을 함과 더불어, 제3영역과 개재층(408, 708, 808)df 거쳐서 전기접속되는 금속전극막(409, 709, 809)을 구비하여 구성된 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900007610A 1989-05-23 1990-05-23 반도체장치 KR940002773B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-129345 1989-05-23
JP1129345A JPH0793434B2 (ja) 1989-05-23 1989-05-23 半導体装置

Publications (2)

Publication Number Publication Date
KR900019261A true KR900019261A (ko) 1990-12-24
KR940002773B1 KR940002773B1 (ko) 1994-04-02

Family

ID=15007314

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900007610A KR940002773B1 (ko) 1989-05-23 1990-05-23 반도체장치

Country Status (4)

Country Link
US (1) US5032880A (ko)
EP (1) EP0399530A1 (ko)
JP (1) JPH0793434B2 (ko)
KR (1) KR940002773B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100486346B1 (ko) * 1997-08-20 2006-04-21 페어차일드코리아반도체 주식회사 전력용반도체소자및그제조방법

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JP2856853B2 (ja) * 1990-07-03 1999-02-10 株式会社東芝 半導体装置
DE4216810C2 (de) * 1991-05-31 1999-09-16 Fuji Electric Co Ltd Steuerschaltung für einen Leitfähigkeitsänderungs-MISFET
US5163964A (en) * 1991-06-26 1992-11-17 Zimmer, Inc. Orthopaedic prosthesis with access in collar
JP2650519B2 (ja) * 1991-07-25 1997-09-03 株式会社日立製作所 横型絶縁ゲートトランジスタ
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
JP3334290B2 (ja) * 1993-11-12 2002-10-15 株式会社デンソー 半導体装置
JPH10335649A (ja) * 1997-05-27 1998-12-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5877047A (en) * 1997-08-15 1999-03-02 Motorola, Inc. Lateral gate, vertical drift region transistor
US6225649B1 (en) * 1998-01-22 2001-05-01 Mitsubishi Denki Kabushiki Kaisha Insulated-gate bipolar semiconductor device
US6617643B1 (en) * 2002-06-28 2003-09-09 Mcnc Low power tunneling metal-oxide-semiconductor (MOS) device
US6885079B2 (en) * 2002-10-23 2005-04-26 Jeng-Jye Shau Methods and configuration to simplify connections between polysilicon layer and diffusion area
US20130277793A1 (en) * 2012-04-24 2013-10-24 Fairchild Korea Semiconductor, Ltd. Power device and fabricating method thereof
US9685335B2 (en) 2012-04-24 2017-06-20 Fairchild Korea Semiconductor Ltd. Power device including a field stop layer
US10181513B2 (en) 2012-04-24 2019-01-15 Semiconductor Components Industries, Llc Power device configured to reduce electromagnetic interference (EMI) noise
CN103268888B (zh) * 2013-05-13 2015-09-09 电子科技大学 一种具有发射极镇流电阻的igbt器件
JP6088401B2 (ja) * 2013-11-08 2017-03-01 株式会社豊田中央研究所 逆導通ｉｇｂｔ
JP6362925B2 (ja) * 2014-05-30 2018-07-25 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
CN107946363A (zh) * 2017-12-18 2018-04-20 深圳市晶特智造科技有限公司 平面型垂直双扩散金属氧化物晶体管及其制作方法

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DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
DE3103444A1 (de) * 1981-02-02 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand
JPS6027170A (ja) * 1983-07-22 1985-02-12 Toshiba Corp 二重拡散絶縁ゲ−ト型電界効界トランジスタ
JPS62266871A (ja) * 1986-05-15 1987-11-19 Fuji Electric Co Ltd たて形ｍｏｓｆｅｔ
JPS63236366A (ja) * 1987-03-25 1988-10-03 Hitachi Ltd 縦形電界効果トランジスタ
JPS63244777A (ja) * 1987-03-31 1988-10-12 Toshiba Corp Ｍｏｓ型電界効果トランジスタ
JPH0622235B2 (ja) * 1987-05-21 1994-03-23 日本電気株式会社 半導体装置の製造方法
JPS6410672A (en) * 1987-07-03 1989-01-13 Nissan Motor Vertical mosfet
JP2786196B2 (ja) * 1987-07-21 1998-08-13 株式会社デンソー 絶縁ゲート型半導体装置
JP2521783B2 (ja) * 1987-09-28 1996-08-07 三菱電機株式会社 半導体装置およびその製造方法
JPH01135071A (ja) * 1987-11-20 1989-05-26 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100486346B1 (ko) * 1997-08-20 2006-04-21 페어차일드코리아반도체 주식회사 전력용반도체소자및그제조방법

Also Published As

Publication number Publication date
US5032880A (en) 1991-07-16
JPH02307274A (ja) 1990-12-20
JPH0793434B2 (ja) 1995-10-09
KR940002773B1 (ko) 1994-04-02
EP0399530A1 (en) 1990-11-28

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