KR900001019A - 반도체 소자 - Google Patents

반도체 소자 Download PDF

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Publication number
KR900001019A
KR900001019A KR1019890007901A KR890007901A KR900001019A KR 900001019 A KR900001019 A KR 900001019A KR 1019890007901 A KR1019890007901 A KR 1019890007901A KR 890007901 A KR890007901 A KR 890007901A KR 900001019 A KR900001019 A KR 900001019A
Authority
KR
South Korea
Prior art keywords
current blocking
layer
blocking layer
semiconductor device
semiconductor
Prior art date
Application number
KR1019890007901A
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English (en)
Other versions
KR930009600B1 (ko
Inventor
도루 후꾸시마
쓰네히사 다까바야시
미끼오 오가이
Original Assignee
쿠사카베 에쭈지
후루까와 덴끼 고오교오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쿠사카베 에쭈지, 후루까와 덴끼 고오교오 가부시끼가이샤 filed Critical 쿠사카베 에쭈지
Publication of KR900001019A publication Critical patent/KR900001019A/ko
Application granted granted Critical
Publication of KR930009600B1 publication Critical patent/KR930009600B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Abstract

내용 없음

Description

반도체 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 반도체소자의 제1실시예를 표시한 단면도,
제2도(A)(B)(C)는 제1도의 반도체소자를 제조할때의 주요 공정도,
제3도는 본 발명에 의한 반도체소자의 제2실시예를 표시한 단면도.

Claims (2)

  1. 반도체층상에 전류저지층 및 협착전류과부가 형성되며, 그 전류저지층 및 협착전류통과부상에 전극금속층이 설치된 반도체 소자에 있어서, 상기 전류저지층이 반도체 재료로 되고, 당해 전류저지층과 상기 전극 금속층과 접촉저항치가, 그 전 극금속층과 상기 반도체층과의 접촉저항치 보다는 높고, 및/또는 상기 전류저지층의 저항율이, 상기 반도체층 보다도 높은것을 특징으로 하는 반도체 소자.
  2. 제1항에 있어서, 전류저지층과 전극금속층과의 사이에 전류저지층의 전류협착창 보다도 창면적이 큰 전류협착창을 보유하는 절연막이 개재되는 것을 특징으로 하는 반도체 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890007901A 1988-06-08 1989-06-08 반도체 소자 KR930009600B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP14083288 1988-06-08
JP?63-140832 1988-06-08
JP?1-35784 1989-02-15
JP1035784A JPH02229484A (ja) 1988-06-08 1989-02-15 半導体素子

Publications (2)

Publication Number Publication Date
KR900001019A true KR900001019A (ko) 1990-01-31
KR930009600B1 KR930009600B1 (ko) 1993-10-07

Family

ID=26374786

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890007901A KR930009600B1 (ko) 1988-06-08 1989-06-08 반도체 소자

Country Status (6)

Country Link
US (1) US5005179A (ko)
EP (1) EP0346120B1 (ko)
JP (1) JPH02229484A (ko)
KR (1) KR930009600B1 (ko)
CA (1) CA1304832C (ko)
DE (1) DE68914885T2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
CN1036822C (zh) * 1993-09-28 1997-12-24 吉林大学 钨丝做掩膜二次质子轰击垂直腔面发射激光器
US5544190A (en) * 1994-11-17 1996-08-06 Phillips Electronics North America Corporation II-VI Semiconductor diode laser with lateral current confinement
JP4423699B2 (ja) * 1999-05-27 2010-03-03 ソニー株式会社 半導体レーザ素子及びその作製方法
JP2005191209A (ja) * 2003-12-25 2005-07-14 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
JP2010267735A (ja) * 2009-05-13 2010-11-25 Sharp Corp 窒化物半導体レーザ素子、光ディスク装置および画像表示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142160A (en) * 1972-03-13 1979-02-27 Hitachi, Ltd. Hetero-structure injection laser
JPS51142991A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Semiconductor laser devices
JPS5286093A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Striped semiconductor laser
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4355396A (en) * 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
JPS5931086A (ja) * 1982-08-14 1984-02-18 Nippon Telegr & Teleph Corp <Ntt> 電流狭窄型半導体レ−ザ
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
DE3406361A1 (de) * 1984-02-22 1985-08-29 Telefunken electronic GmbH, 7100 Heilbronn Doppel-heterostruktur-laser und verfahren zu seiner herstellung
JPH01140789A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 半導体レーザ

Also Published As

Publication number Publication date
KR930009600B1 (ko) 1993-10-07
DE68914885D1 (de) 1994-06-01
CA1304832C (en) 1992-07-07
DE68914885T2 (de) 1994-08-11
EP0346120A2 (en) 1989-12-13
JPH02229484A (ja) 1990-09-12
EP0346120A3 (en) 1990-07-18
US5005179A (en) 1991-04-02
EP0346120B1 (en) 1994-04-27

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