KR900008668A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR900008668A
KR900008668A KR1019890015796A KR890015796A KR900008668A KR 900008668 A KR900008668 A KR 900008668A KR 1019890015796 A KR1019890015796 A KR 1019890015796A KR 890015796 A KR890015796 A KR 890015796A KR 900008668 A KR900008668 A KR 900008668A
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South Korea
Prior art keywords
semiconductor
electrode
region
thin layer
stop wall
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KR1019890015796A
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English (en)
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KR930004717B1 (ko
Inventor
고오지 오오쯔까
히로가즈 고토오
Original Assignee
고타니 고우이찌
산켄덴끼 가부시끼가이샤
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Publication of KR900008668A publication Critical patent/KR900008668A/ko
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Publication of KR930004717B1 publication Critical patent/KR930004717B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 받명의 제1의 실시예에 관한 쇼트키배리어 다이오드를 보여주는 단면도,
제2도는 제1도의 접속전극과 실리콘산화막을 생략한 쇼트키배리어다이오드를 보여주는 평면도,
제3도 (A) (B)는 제1도의 쇼트키배리어다이오드의 제조방법을 공정순으로 보여주는 단면도.

Claims (3)

  1. 반도체영역과, 전극을 구비하여 반도체영역과의 사이에 정류장벽을 형성하기 위한 정류장벽 형성수단과, 전극을 포위하도록 반도체영역상에 배치되고, 또한 전극에 전기적으로 접속되고, 또한 전극의 시트저항보다 큰 10k/□ 이상의 시트저항을 가지며, 그리고 반도체영역과의 사이에 쇼트키배리어가 생기게 하도록 형성되어 있는 제1의 박층영역과, 제1의 박층영역을 포함하도록 반도체영역상에 배치되고, 또한 제1의 박층영역에 전기적으로 접속되고, 또한 제1의 박층영역보다 큰 시트저항을 가지며, 또한 반도체영역과의 사이에 쇼트키배리어가 생기게하도록 형성되어 있는 제2의 박층영역을 구비한 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 정류장벽형성수단은, 반도체영역(3)과의 사이에 쇼트키배리어를 형성하는 배리어전극(4)인 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 정류장벽형성수단은, 반도체영역(23)과 반대의 도전형을 가지며, 또한 반도체영역(23)보다도 낮은 저항율을 가지고 있는 반대도전형 반도체영역(24)과, 반대도전형 반도체영역(24)상에 형성된 오오믹전극(26)으로 이루어지는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890015796A 1988-11-11 1989-11-01 반도체 장치 KR930004717B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP88-285048 1988-11-11
JP63285048A JPH0618276B2 (ja) 1988-11-11 1988-11-11 半導体装置
JP63-285048 1988-11-11

Publications (2)

Publication Number Publication Date
KR900008668A true KR900008668A (ko) 1990-06-04
KR930004717B1 KR930004717B1 (ko) 1993-06-03

Family

ID=17686493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890015796A KR930004717B1 (ko) 1988-11-11 1989-11-01 반도체 장치

Country Status (5)

Country Link
US (2) US5081510A (ko)
EP (2) EP0368127B1 (ko)
JP (1) JPH0618276B2 (ko)
KR (1) KR930004717B1 (ko)
DE (1) DE68917558T2 (ko)

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JP6544264B2 (ja) * 2016-02-23 2019-07-17 サンケン電気株式会社 半導体装置
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JP6558385B2 (ja) * 2017-02-23 2019-08-14 トヨタ自動車株式会社 半導体装置の製造方法

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Also Published As

Publication number Publication date
US5081510A (en) 1992-01-14
JPH0618276B2 (ja) 1994-03-09
DE68917558D1 (de) 1994-09-22
JPH02130959A (ja) 1990-05-18
DE68917558T2 (de) 1995-04-20
EP0579286A3 (en) 1994-09-07
EP0579286A2 (en) 1994-01-19
US5112774A (en) 1992-05-12
EP0368127A3 (en) 1990-09-19
EP0368127B1 (en) 1994-08-17
EP0368127A2 (en) 1990-05-16
KR930004717B1 (ko) 1993-06-03

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