KR960039426A - 전계효과에 의해 제어가능한 반도체소자 - Google Patents

전계효과에 의해 제어가능한 반도체소자 Download PDF

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KR960039426A
KR960039426A KR1019960010104A KR19960010104A KR960039426A KR 960039426 A KR960039426 A KR 960039426A KR 1019960010104 A KR1019960010104 A KR 1019960010104A KR 19960010104 A KR19960010104 A KR 19960010104A KR 960039426 A KR960039426 A KR 960039426A
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contact surface
semiconductor device
gate electrode
island
field effect
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KR1019960010104A
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KR100397079B1 (ko
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게르하르트 밀러
토마스 라스카
알프레트 포르스트
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알베르트 발도르프 · 롤프 옴케
지멘스 악티엔게젤샤프트
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

게이트 단자용 코택면(3)은 코택면과 게이트 전극 사이에 배치된 적어도 하나의 집적 옴 저항(5)을 통해 게이트 전극에 접속된다. 따라서, 반도체소자의 병렬 접속시 지금까지 필요했던 게이트 인입선내의 별도의 저항칩이 필요없다. 그로 인해, 모듈의 간단한 구성이 가능해진다.

Description

전계효과에 의해 제어가능한 반도체소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도내지 제3도는 각 실시예의 평면도.

Claims (8)

  1. 반도체 몸체의 표면에 대해 절연되게 도핑된 폴리실리콘층이 반도체 몸체상에 배열되며, 상기 폴리실리콘층의 제1부분은 게이트 전극(1)이고, 제2부분은 게이트 인입선을 위한 콘택면(3)이도록 구성된 전계효과에 의해 제어가능한 반도체소자에 있어서, 콘택면이 콘택면(3)과, 게이트 전극(1) 사이에 놓인 적어도 하나의 집적 옴 저항을 통해 게이트 전극에 전기적으로 접속되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체 소자.
  2. 제1항에 있어서, 옴 저항이 도핑된 다결정 실리콘으로 이루어진 적어도 하나의 섬(5)인 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자
  3. 제2항에 있어서, 섬(5)이 적어도 하나의 스트립도체(6)를 통해 콘택면(3)에 접속되고, 적어도 하나의 스트립도체(6)를 통해 게이트 전극(1)에 접속되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자.
  4. 제1항에 있어서, 옴 저항이 도핑된 다결정 실리콘으로 이루어진 적어도 하나의 스트립(8)으로 형성되며, 상기 스트립(8)은 콘택면(3)과, 게이트 전극(1)에 접속되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자.
  5. 제1항에 있어서 콘택면(3)은 직사각형이고, 각 에지의 근처에 또는 근처내에 섬(5)이 배치되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자.
  6. 제1항내지 5항 중 어느 한 항에 있어서, 콘택면(23)은 가장자리에 적어도 하나의 리세스(24)를 가지며, 섬(5)이 상기 리세스내에 배치되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체 소자.
  7. 제6항에 있어서, 콘택면(3)이 직사각형으로 형성되고, 콘택면의 각각의 에지는 사각형 리세스(24)를 가지며, 각각의 리세스내에 옴 저항으로서 사각형 폴리실리콘 섬(5)이 배열되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체소자.
  8. 제1항 또는 제3항에 있어서 섬(5) 및 게이트 전극(1)이 절연층(10)으로 덮혀지며, 게이트 전극 및 콘택면 상부에 잇는 절연층상에는 각각 하나의 금속층 14,15)이 놓이고 상기 금속층은 절연층내에 제공된 콘택홀(16,19)을 통해 게이트전극 또는 콘택면에 전기적으로 접속되며, 스트립도체(6)는 콘택홀(17)을 통해 섬(5)콘택면(3) 및 게이트 전극(1)에 전기적으로 접속되는 것을 특징으로 하는 전계효과에 의해 제어가능한 반도체 소자.
    ※참고사항: 최초출원 내용에 의하여 공개하는 것임.
KR1019960010104A 1995-04-05 1996-04-04 전계효과에의해제어가능한반도체소자 KR100397079B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19512799.4 1995-04-05
DE19512799A DE19512799C2 (de) 1995-04-05 1995-04-05 Durch Feldeffekt steuerbares Halbleiterbauelement

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KR960039426A true KR960039426A (ko) 1996-11-25
KR100397079B1 KR100397079B1 (ko) 2004-03-18

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US (1) US5726474A (ko)
EP (1) EP0736907B1 (ko)
JP (1) JP3677346B2 (ko)
KR (1) KR100397079B1 (ko)
DE (2) DE19512799C2 (ko)

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DE19808154A1 (de) * 1998-02-27 1999-09-02 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
WO1999044240A1 (de) 1998-02-27 1999-09-02 Asea Brown Boveri Ag Bipolartransistor mit isolierter gateelektrode
DE19823170A1 (de) * 1998-05-23 1999-11-25 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
JP2994326B2 (ja) * 1998-04-27 1999-12-27 日本電気アイシーマイコンシステム株式会社 半導体装置
US7486541B2 (en) * 2003-06-13 2009-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Resistive cell structure for reducing soft error rate
US6992916B2 (en) * 2003-06-13 2006-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell design with high resistor CMOS gate structure for soft error rate improvement
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EP2602828A1 (en) 2011-12-07 2013-06-12 Nxp B.V. Semiconductor device having isolation trenches
CN106415837B (zh) 2013-11-28 2019-10-22 罗姆股份有限公司 半导体装置
DE102017105548A1 (de) 2017-03-15 2018-09-20 Infineon Technologies Dresden Gmbh Halbleitervorrichtung, die eine gatekontaktstruktur enthält
JP7127413B2 (ja) * 2018-08-03 2022-08-30 富士電機株式会社 抵抗素子及びその製造方法
JP7180359B2 (ja) * 2018-12-19 2022-11-30 富士電機株式会社 抵抗素子
US11664436B2 (en) * 2021-03-01 2023-05-30 Wolfspeed, Inc. Semiconductor devices having gate resistors with low variation in resistance values

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JPH0758781B2 (ja) * 1985-10-24 1995-06-21 三菱電機株式会社 電界効果型半導体装置
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Publication number Publication date
EP0736907B1 (de) 1999-12-22
DE19512799A1 (de) 1996-10-10
DE19512799C2 (de) 1998-11-12
KR100397079B1 (ko) 2004-03-18
JP3677346B2 (ja) 2005-07-27
JPH08288512A (ja) 1996-11-01
EP0736907A1 (de) 1996-10-09
DE59603948D1 (de) 2000-01-27
US5726474A (en) 1998-03-10

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