JP7180359B2 - 抵抗素子 - Google Patents
抵抗素子 Download PDFInfo
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- JP7180359B2 JP7180359B2 JP2018237125A JP2018237125A JP7180359B2 JP 7180359 B2 JP7180359 B2 JP 7180359B2 JP 2018237125 A JP2018237125 A JP 2018237125A JP 2018237125 A JP2018237125 A JP 2018237125A JP 7180359 B2 JP7180359 B2 JP 7180359B2
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- Prior art keywords
- resistance layer
- resistance
- insulating film
- external connection
- connection electrode
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- 239000010410 layer Substances 0.000 claims description 273
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 40
- 239000011229 interlayer Substances 0.000 claims description 27
- 230000001681 protective effect Effects 0.000 claims description 25
- 239000010408 film Substances 0.000 description 150
- 239000012535 impurity Substances 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000013256 coordination polymer Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- -1 transition metal nitride Chemical class 0.000 description 1
Images
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- H—ELECTRICITY
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
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- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
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- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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Description
<抵抗素子>
本発明の実施形態に係る抵抗素子は、図1及び図2に示すように、一対の第1外部接続電極5a及び第2外部接続電極5b、並びに第1外部接続電極5aと第2外部接続電極5bとを電気的に接続する中継配線5cを備える。平面パターンとして中継配線5cは、第1外部接続電極5aと第2外部接続電極5bの間に配置され、第1外部接続電極5a、第2外部接続電極5b及び中継配線5cは、それぞれ矩形形状の平面パターンを有する。そして、第1外部接続電極5a、中継配線5c及び第2外部接続電極5bが順に並ぶ方向を、それぞれの短辺の方向とし、互いの長辺を平行とするように配列されている。実施形態に係る抵抗素子のチップサイズは、例えば2.8mm×2.5mm程度である。図1の左側に配置した第1外部接続電極5aと右側に配置した第2外部接続電極5bとは、ほぼ互いに相似形をなしている。第1外部接続電極5aと第2外部接続電極5bは互いに離間して並列して配置されている。例えば、第1外部接続電極5a及び第2外部接続電極5bは、図1の上下方向を長手方向とする矩形の平面パターンとして示され、長さLpは2.0mm程度、幅Wpは0.9mm程度、間隔Sは0.5mm程度以上である。図1においては、中継配線5cも、図1の上下方向を長手方向とする矩形の平面パターンとして示されている。実施形態に係る抵抗素子を構成するチップの外周部に、ガードリング層5dがリング状に配置される。
不純物密度を1018cm-3以上とすれば、複数のpn接合のそれぞれは、ツェナー降伏やなだれ降伏を利用したツェナーダイオード等の定電圧ダイオードとして機能する。また、図5に示すように、第1外部接続電極5aのコンタクトプラグ16a及び中継配線5cのコンタクトプラグ16bは、それぞれ両端のn+型のコンタクト領域13c、13dに金属学的に接続している。即ち、第1外部接続電極5a及び中継配線5cのいずれから見ても、図6に示すように一端から他端へn‐p‐n‐p‐・・・‐p‐nの順で接続され、n-p-nフック構造を周期的に配列した階段状ポテンシャルを形成している。そのため、電流電圧特性は、図7に示すように、正負側ともに逆方向特性となる。降伏電圧VBはn‐p接合の段数で決まる。
実施形態に係る抵抗素子は、図12に示すように、例えばu相、v相、w相で構成される3相モータを駆動するインバータモジュール100に適用可能である。インバータモジュール100は、u相を駆動する電力用半導体装置TR1,TR2,TR3,TR4、v相を駆動する電力用半導体装置TR5,TR6,TR7,TR8、w相を駆動する電力用半導体装置TR9,TR10,TR11,TR12を備える。電力用半導体装置TR1~TR12には還流ダイオード(図示省略)がそれぞれ接続されている。電力用半導体装置TR1~TR12のそれぞれにはIGBTが使用可能で、スイッチング動作時の発振現象を抑制するために、IGBTのそれぞれのゲート電極には第1ゲート抵抗R1~第12ゲート抵抗R12が接続されている。
次に、図13の平面図に示すクランク状のE-E線に沿った断面図である図14~図26を参照しながら、本発明の実施形態に係る抵抗素子の製造方法の一例を説明する。なお、以下に述べる抵抗素子の製造方法は一例であり、特許請求の範囲に記載した趣旨の範囲であれば、この変形例を含めて、これ以外の種々の製造方法により実現可能であることは勿論である。
上記のように、本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面は本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
2…絶縁膜
2a,2b…下層絶縁膜
3、13…DOPOS層
3a…第1抵抗層
3b…第2抵抗層
3c…第1の抵抗層用保護素子
3d…第2の抵抗層用保護素子
4…層間絶縁膜
5…金属膜
5a…第1外部接続電極
5b…第2外部接続電極
5c…中継配線
5d…ガードリング層
6a,6b,6c,6d,6e,6f、6g,16a,16b,16c,16d…コンタクトプラグ
7…保護膜
7a,7b…窓部
9…対向電極
10,11,12,13c,13d…コンタクト領域
13a…第1導電型帯
13b…第2導電型帯
20a,20b…実効接続領域
100…インバータモジュール
Claims (8)
- 下層絶縁膜と、
前記下層絶縁膜上に設けられた第1の抵抗層と、
前記第1の抵抗層の一方の側壁面側に並列して前記下層絶縁膜上に設けられ、第1導電型の層からなる第1導電型帯と第2導電型の層からなる第2導電型帯との交互配列により、pn接合を直列接続して形成する、一方の第1の抵抗層用保護素子と、
前記第1の抵抗層及び前記一方の第1の抵抗層用保護素子を被覆するように設けられた層間絶縁膜と、
前記層間絶縁膜上に設けられ、前記第1の抵抗層の一方の端子及び前記一方の第1の抵抗層用保護素子の一方の端子にそれぞれ電気的に接続された第1の外部接続電極と、
前記層間絶縁膜上に設けられ、前記第1の抵抗層の他方の端子及び前記一方の第1の抵抗層用保護素子の他方の端子にそれぞれ電気的に接続された第2の外部接続電極と、
を備えることを特徴とする抵抗素子。 - 半導体基板を更に備え、
前記下層絶縁膜は半導体基板の上面に設けられていることを特徴とする請求項1に記載の抵抗素子。 - 半導体基板と、
前記半導体基板の上面に設けられた下層絶縁膜と、
前記下層絶縁膜上に設けられた第1の抵抗層と、
前記第1の抵抗層の一方の側壁面側に並列して前記下層絶縁膜上に設けられ、第1導電型の層からなる第1導電型帯と第2導電型の層からなる第2導電型帯との交互配列により、pn接合を直列接続して形成する、一方の第1の抵抗層用保護素子と、
前記第1の抵抗層及び前記一方の第1の抵抗層用保護素子を被覆するように設けられた層間絶縁膜と、
前記層間絶縁膜上に設けられ、前記第1の抵抗層の一方の端子及び前記一方の第1の抵抗層用保護素子の一方の端子にそれぞれ電気的に接続された第1の外部接続電極と、
前記層間絶縁膜上に設けられ、前記第1の抵抗層の他方の端子及び前記一方の第1の抵抗層用保護素子の他方の端子にそれぞれ電気的に接続され、かつ、前記下層絶縁膜の窓部を介して前記半導体基板にオーミック接続される中継配線と、
前記半導体基板の下面に設けられた対向電極と、
を備えることを特徴とする抵抗素子。 - 前記一方の第1の抵抗層用保護素子は、前記第1の外部接続電極に接続された第1導電型の一方のコンタクト領域、前記中継配線に接続された第1導電型の他方のコンタクト領域を有し、
前記一方及び他方のコンタクト領域の間に前記第1導電型帯及び前記第2導電型帯が交互に設けられていることを特徴とする請求項3に記載の抵抗素子。 - 前記第1の抵抗層の他方の側壁面側に並列して前記下層絶縁膜上に設けられ、前記第1導電型帯と前記第2導電型帯との交互配列により、pn接合を直列接続して形成する、他方の第1の抵抗層用保護素子を更に備え、
前記第1の外部接続電極が、前記他方の第1の抵抗層用保護素子の一方の端子に電気的に接続され、前記第2の外部接続電極が、前記他方の第1の抵抗層用保護素子の他方の端子に電気的に接続されることを特徴とする請求項1または2に記載の抵抗素子。 - 前記第1の抵抗層の他方の側壁面側に並列して前記下層絶縁膜上に設けられ、前記第1導電型帯と前記第2導電型帯との交互配列により、pn接合を直列接続して形成する、他方の第1の抵抗層用保護素子を更に備え、
前記第1の外部接続電極が、前記他方の第1の抵抗層用保護素子の一方の端子に電気的に接続され、前記中継配線が、前記他方の第1の抵抗層用保護素子の他方の端子に電気的に接続されることを特徴とする請求項3または4に記載の抵抗素子。 - 前記下層絶縁膜上に設けられ、前記中継配線に一方の端子が接続され、第2の外部接続電極に他方の端子が接続された第2の抵抗層と、
前記下層絶縁膜上に、前記第2の抵抗層の一方の側壁面側に並列するように設けられ、前記第1導電型帯と前記第2導電型帯との交互配列によりpn接合を直列接続して形成し、前記中継配線に一方の端子が接続され前記第2の外部接続電極に他方の端子が接続された、一方の第2の抵抗層用保護素子と、
を更に備えることを特徴とする請求項3、4または6のいずれか一項に記載の抵抗素子。 - 前記下層絶縁膜上に、前記第2の抵抗層の他方の側壁面側に並列するように設けられ、前記第1導電型帯と前記第2導電型帯との交互配列により、pn接合を直列接続して形成し、前記中継配線に一方の端子が接続され前記第2の外部接続電極に他方の端子が接続された、他方の第2の抵抗層用保護素子を更に備えることを特徴とする請求項7に記載の抵抗素子。
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