JP2010153636A - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
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- JP2010153636A JP2010153636A JP2008330813A JP2008330813A JP2010153636A JP 2010153636 A JP2010153636 A JP 2010153636A JP 2008330813 A JP2008330813 A JP 2008330813A JP 2008330813 A JP2008330813 A JP 2008330813A JP 2010153636 A JP2010153636 A JP 2010153636A
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- gate
- igbt
- diode
- insulated gate
- resistor
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- 239000004065 semiconductor Substances 0.000 title claims description 65
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 30
- 238000010586 diagram Methods 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 230000006378 damage Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
Abstract
【解決手段】 ダイオードと抵抗を並列接続してIGBTと同一チップに集積化し、ダイオードのカソードをIGBTのゲートに接続することにより、ターンオン特性を劣化させずにIGBTのチップ内でdv/dtの値を制限できる。IGBTのdv/dt破壊が防止できる抵抗値を有する抵抗を内蔵することにより、チップの供給先(ユーザ側)でのdv/dtの増大によるIGBTの破壊を防止できる。
【選択図】 図2
Description
2a n+型半導体層
2b n−型半導体層
3 チャネル層
4 トレンチ
5 ゲート絶縁膜
6 ゲート電極
7 エミッタ領域
8 ボディ領域
9 層間絶縁膜
9’ 絶縁膜
10 エミッタ電極
11、60 IGBT
11e、60e 素子領域
11d、60d 保護ダイオード
13、70 整流ダイオード
14 抵抗
15 ゲート配線部
16 ゲートパッド部
60、100 絶縁ゲート型半導体装置
Claims (5)
- 一導電型半導体層と、
該一導電型半導体層上に設けられた逆導電型半導体層と、
該逆導電型半導体層表面に設けられた絶縁ゲート型半導体素子のトランジスタセルが配置される素子領域と、
該素子領域外の前記逆導電型半導体層表面に設けられ、前記絶縁ゲート型半導体素子のゲート電極にカソードが接続し、ゲート駆動回路との接続端にアノードが接続するダイオードと、
前記素子領域外の前記逆導電型半導体層表面に設けられ、前記ダイオードの両端と並列に接続する抵抗と、
を具備することを特徴とする絶縁ゲート型半導体装置。 - 前記絶縁ゲート型半導体素子のターンオフ時の電圧変化率を所望の値以下に制限したことを特徴とする請求項1に記載の絶縁ゲート型半導体装置。
- 前記ゲート電極に接続するゲートパッド部を有し、該ゲートパッド部下方に前記ダイオードおよび前記抵抗が配置されることを特徴とする請求項2に記載の絶縁ゲート型半導体装置。
- 前記素子領域外の前記逆導電型半導体層表面に、前記ゲート電極と前記ゲートパッド部とを接続するゲート配線部が設けられ、該ゲート配線部に他のダイオードを設けることを特徴とする請求項3に記載の絶縁ゲート型半導体装置。
- 前記絶縁ゲート型半導体素子は、発光管の電流制御を行うIGBTであることを特徴とする請求項1から請求項4に記載の絶縁ゲート型半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008330813A JP2010153636A (ja) | 2008-12-25 | 2008-12-25 | 絶縁ゲート型半導体装置 |
US12/645,942 US8253207B2 (en) | 2008-12-25 | 2009-12-23 | Insulated gate semiconductor device |
CN200910262187A CN101789427A (zh) | 2008-12-25 | 2009-12-25 | 绝缘栅型半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008330813A JP2010153636A (ja) | 2008-12-25 | 2008-12-25 | 絶縁ゲート型半導体装置 |
Publications (1)
Publication Number | Publication Date |
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JP2010153636A true JP2010153636A (ja) | 2010-07-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008330813A Pending JP2010153636A (ja) | 2008-12-25 | 2008-12-25 | 絶縁ゲート型半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8253207B2 (ja) |
JP (1) | JP2010153636A (ja) |
CN (1) | CN101789427A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015080162A1 (ja) * | 2013-11-28 | 2015-06-04 | ローム株式会社 | 半導体装置 |
JP2016035220A (ja) * | 2014-08-01 | 2016-03-17 | 富士電機株式会社 | 半導体装置 |
JP2019149558A (ja) * | 2014-05-12 | 2019-09-05 | ローム株式会社 | 半導体装置 |
CN111341760A (zh) * | 2018-12-19 | 2020-06-26 | 富士电机株式会社 | 电阻元件 |
US11133398B2 (en) | 2014-05-12 | 2021-09-28 | Rohm Co., Ltd. | Semiconductor device including sense insulated-gate bipolar transistor |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012054378A (ja) * | 2010-09-01 | 2012-03-15 | Renesas Electronics Corp | 半導体装置 |
CN103051159A (zh) * | 2013-01-08 | 2013-04-17 | 株洲南车时代电气股份有限公司 | 电力电子装置及其混合功率模块、混合功率模块的形成方法 |
JP7448481B2 (ja) | 2018-11-02 | 2024-03-12 | ローム株式会社 | 半導体装置、半導体モジュール、リレーユニット、バッテリユニット、及び車両 |
CN112930632B (zh) | 2018-11-02 | 2023-08-04 | 罗姆股份有限公司 | 半导体单元、半导体装置、电池单元以及车辆 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000033380A1 (de) * | 1998-12-03 | 2000-06-08 | Infineon Technologies Ag | Steuerbares halbleiterbauelement mit einem gatevorwiderstand |
JP2002246599A (ja) * | 2001-02-16 | 2002-08-30 | Mitsubishi Electric Corp | 電界効果型半導体装置及びその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005302380A (ja) | 2004-04-07 | 2005-10-27 | Sony Corp | 発光回路およびキセノンランプの発光方法 |
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2008
- 2008-12-25 JP JP2008330813A patent/JP2010153636A/ja active Pending
-
2009
- 2009-12-23 US US12/645,942 patent/US8253207B2/en active Active
- 2009-12-25 CN CN200910262187A patent/CN101789427A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000033380A1 (de) * | 1998-12-03 | 2000-06-08 | Infineon Technologies Ag | Steuerbares halbleiterbauelement mit einem gatevorwiderstand |
JP2002246599A (ja) * | 2001-02-16 | 2002-08-30 | Mitsubishi Electric Corp | 電界効果型半導体装置及びその製造方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10886300B2 (en) | 2013-11-28 | 2021-01-05 | Rohm Co., Ltd. | Semiconductor device |
US11908868B2 (en) | 2013-11-28 | 2024-02-20 | Rohm Co., Ltd. | Semiconductor device |
JPWO2015080162A1 (ja) * | 2013-11-28 | 2017-03-16 | ローム株式会社 | 半導体装置 |
US9917102B2 (en) | 2013-11-28 | 2018-03-13 | Rohm Co., Ltd. | Semiconductor device |
US11367738B2 (en) | 2013-11-28 | 2022-06-21 | Rohm Co., Ltd. | Semiconductor device |
US10438971B2 (en) | 2013-11-28 | 2019-10-08 | Rohm Co., Ltd. | Semiconductor device |
WO2015080162A1 (ja) * | 2013-11-28 | 2015-06-04 | ローム株式会社 | 半導体装置 |
US11133398B2 (en) | 2014-05-12 | 2021-09-28 | Rohm Co., Ltd. | Semiconductor device including sense insulated-gate bipolar transistor |
JP2021007165A (ja) * | 2014-05-12 | 2021-01-21 | ローム株式会社 | 半導体装置 |
JP2019149558A (ja) * | 2014-05-12 | 2019-09-05 | ローム株式会社 | 半導体装置 |
US11942531B2 (en) | 2014-05-12 | 2024-03-26 | Rohm Co., Ltd. | Semiconductor device including sense insulated-gate bipolar transistor |
JP2016035220A (ja) * | 2014-08-01 | 2016-03-17 | 富士電機株式会社 | 半導体装置 |
CN111341760A (zh) * | 2018-12-19 | 2020-06-26 | 富士电机株式会社 | 电阻元件 |
Also Published As
Publication number | Publication date |
---|---|
US8253207B2 (en) | 2012-08-28 |
CN101789427A (zh) | 2010-07-28 |
US20100163922A1 (en) | 2010-07-01 |
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