JP6430424B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6430424B2 JP6430424B2 JP2016044000A JP2016044000A JP6430424B2 JP 6430424 B2 JP6430424 B2 JP 6430424B2 JP 2016044000 A JP2016044000 A JP 2016044000A JP 2016044000 A JP2016044000 A JP 2016044000A JP 6430424 B2 JP6430424 B2 JP 6430424B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- bidirectional diode
- resistance
- semiconductor element
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 112
- 230000002457 bidirectional effect Effects 0.000 claims description 73
- 239000012535 impurity Substances 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 230000015556 catabolic process Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 10
- 230000001939 inductive effect Effects 0.000 description 3
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Description
本実施形態の半導体装置は、リング状形状を有し、第1の接続部と、第1の接続部よりも内側に設けられた第2の接続部と、を有する第1の双方向ダイオードと、リング状形状の内側に設けられ、第1の半導体素子電極と、第2の半導体素子電極と、制御電極と、を有し、第1の半導体素子電極は第1の接続部と電気的に接続され、第2の半導体素子電極は制御電極と電気的に接続された半導体素子と、第1の抵抗電極と、第2の抵抗電極と、を有し第1の抵抗電極は第2の接続部及び制御電極に電気的に接続された第1の抵抗素子と、一方の電極は第2の抵抗電極に電気的に接続され他方の電極は第2の半導体素子電極に電気的に接続された第2の双方向ダイオードと、第2の抵抗電極に電気的に接続された第2の抵抗素子と、を備える。
102 半導体素子(MOSFET)
106 第1の双方向ダイオード(GD間双方向ダイオード)
106a 第1の接続部
106b 第2の接続部
108 第1の抵抗素子(ゲートシリーズ抵抗)
110 第2の抵抗素子(プルダウン抵抗)
112 第2の双方向ダイオード(GS間双方向ダイオード)
114 基板
130 第1の半導体素子電極(ドレイン電極)
132 第2の半導体素子電極(ソース電極)
134 ウェル領域
136 ソース領域
138 制御電極(ゲート電極)
140 絶縁層
142 ドリフト層
144 配線
200 電気回路(アクティブクランプ回路)
202 半導体素子(MOSFET)
202a 第1の半導体素子電極(ドレイン電極)
202b 第2の半導体素子電極(ソース電極)
202c 制御電極(ゲート電極)
204 ボディダイオード
206 第1の双方向ダイオード(GD間双方向ダイオード)
206a 第1の接続部
206b 第2の接続部
208 第1の抵抗素子(ゲート抵抗)
208a 第1の抵抗電極
208b 第2の抵抗電極
210 第2の抵抗素子(プルダウン抵抗)
212 第2の双方向ダイオード(GS間双方向ダイオード)
800 半導体装置
802 半導体素子領域
806 第1の双方向ダイオード領域
808 第1の抵抗素子領域
810 第2の抵抗素子領域
812 第2の双方向ダイオード領域
L 外部電気回路
Claims (3)
- リング状形状を有し、第1の接続部と、前記第1の接続部よりも内側に設けられた第2の接続部と、を有する第1の双方向ダイオードと、
前記リング状形状の内側に設けられ、第1の半導体素子電極と、第2の半導体素子電極と、制御電極と、を有し、前記第1の半導体素子電極は前記第1の接続部と電気的に接続されており、前記第2の半導体素子電極は前記制御電極と電気的に接続された半導体素子と、
前記リング状形状の内側に設けられ、第1の抵抗電極と、第2の抵抗電極と、を有し前記第1の抵抗電極は前記第2の接続部及び前記制御電極に電気的に接続された第1の抵抗素子と、
前記リング状形状の内側に設けられ、一方の電極は前記第2の抵抗電極に電気的に接続され他方の電極は前記第2の半導体素子電極に電気的に接続された第2の双方向ダイオードと、
前記リング状形状の内側に設けられ、前記第2の抵抗電極に電気的に接続された第2の抵抗素子と、
を備え、
前記半導体素子はMOSFET又はIGBTであり、前記第1の抵抗素子及び前記第2の抵抗素子は、前記第2の双方向ダイオードの周囲に設けられ、前記第1の双方向ダイオードの逆方向電圧は前記半導体素子の真性耐圧以上であり、前記第1の双方向ダイオードの逆方向電圧は前記第2の双方向ダイオードの逆方向電圧以上であり、前記第2の双方向ダイオードの逆方向電圧は前記半導体素子のゲート定格電圧より高く、前記半導体素子のゲート膜破壊電圧より低い半導体装置。 - 前記第1の双方向ダイオードと前記第2の双方向ダイオードと前記第1の抵抗素子と前記第2の抵抗素子はポリシリコンを含む請求項1記載の半導体装置。
- 前記第1の抵抗素子の第1のポリシリコンに含まれる不純物と前記第2の抵抗素子の第2のポリシリコンに含まれる不純物は、種類が互いに同じであり濃度が互いに等しい請求項2記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016044000A JP6430424B2 (ja) | 2016-03-08 | 2016-03-08 | 半導体装置 |
US15/247,541 US10325902B2 (en) | 2016-03-08 | 2016-08-25 | Power transistor with a plurality of bi-directional diodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016044000A JP6430424B2 (ja) | 2016-03-08 | 2016-03-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017162891A JP2017162891A (ja) | 2017-09-14 |
JP6430424B2 true JP6430424B2 (ja) | 2018-11-28 |
Family
ID=59788638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016044000A Active JP6430424B2 (ja) | 2016-03-08 | 2016-03-08 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10325902B2 (ja) |
JP (1) | JP6430424B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6988518B2 (ja) * | 2018-01-26 | 2022-01-05 | 株式会社デンソー | 整流装置及び回転電機 |
CN109192774A (zh) * | 2018-09-06 | 2019-01-11 | 江苏中科君芯科技有限公司 | 栅极双箝位的igbt器件 |
JP7180359B2 (ja) * | 2018-12-19 | 2022-11-30 | 富士電機株式会社 | 抵抗素子 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0218968A (ja) * | 1988-07-06 | 1990-01-23 | Nec Corp | 縦型mos電界効果トランジスタ |
JPH07147387A (ja) * | 1993-11-24 | 1995-06-06 | Hitachi Ltd | パワートランジスタ装置 |
US5502338A (en) * | 1992-04-30 | 1996-03-26 | Hitachi, Ltd. | Power transistor device having collector voltage clamped to stable level over wide temperature range |
JP3189589B2 (ja) * | 1994-09-20 | 2001-07-16 | 株式会社日立製作所 | 絶縁ゲート型半導体装置 |
JP5391261B2 (ja) | 2000-03-06 | 2014-01-15 | ローム株式会社 | 半導体装置 |
JP4917709B2 (ja) | 2000-03-06 | 2012-04-18 | ローム株式会社 | 半導体装置 |
JP2002141507A (ja) | 2000-10-31 | 2002-05-17 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
JP4791015B2 (ja) * | 2004-09-29 | 2011-10-12 | ルネサスエレクトロニクス株式会社 | 縦型mosfet |
JP5331497B2 (ja) * | 2008-11-27 | 2013-10-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
GB2466643B (en) * | 2008-12-30 | 2011-05-04 | Wolfson Microelectronics Plc | Semiconductor structures for biasing devices |
US9142463B2 (en) | 2010-01-29 | 2015-09-22 | Fuji Electric Co., Ltd. | Semiconductor device |
JP6098041B2 (ja) | 2012-04-02 | 2017-03-22 | 富士電機株式会社 | 半導体装置 |
JP2014013796A (ja) * | 2012-07-03 | 2014-01-23 | Fuji Electric Co Ltd | ワンチップイグナイタ及び内燃機関点火装置 |
-
2016
- 2016-03-08 JP JP2016044000A patent/JP6430424B2/ja active Active
- 2016-08-25 US US15/247,541 patent/US10325902B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10325902B2 (en) | 2019-06-18 |
JP2017162891A (ja) | 2017-09-14 |
US20170263598A1 (en) | 2017-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5070693B2 (ja) | 半導体装置 | |
US9142463B2 (en) | Semiconductor device | |
KR101742447B1 (ko) | 반도체 장치 | |
JP2008509548A (ja) | 半導体スイッチ装置と電子素子 | |
JP6218462B2 (ja) | ワイドギャップ半導体装置 | |
JP5798024B2 (ja) | 半導体装置 | |
US10217861B2 (en) | High voltage integrated circuit with high voltage junction termination region | |
US11605706B2 (en) | Semiconductor device | |
JP6430424B2 (ja) | 半導体装置 | |
US11309415B2 (en) | Wide gap semiconductor device | |
JPWO2019156215A1 (ja) | 半導体装置 | |
JP2015119521A (ja) | 半導体装置及びスイッチング回路 | |
JP6677672B2 (ja) | 半導体装置 | |
JP2011108684A (ja) | 半導体装置 | |
US9601481B2 (en) | Semiconductor device | |
JP2008244487A (ja) | 複合型mosfet | |
JP4858253B2 (ja) | トランジスタの駆動回路 | |
JP2011049424A (ja) | 半導体デバイス | |
JP5990986B2 (ja) | 保護ダイオード | |
JP6441191B2 (ja) | 半導体装置 | |
JP2013214597A (ja) | 半導体デバイス | |
JP2023162778A (ja) | 半導体装置 | |
TW202038424A (zh) | 靜電放電防護元件 | |
JP2005243674A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170912 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20170914 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20170915 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180703 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180629 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180830 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181002 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181031 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6430424 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |