JP4791015B2 - 縦型mosfet - Google Patents
縦型mosfet Download PDFInfo
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- JP4791015B2 JP4791015B2 JP2004283489A JP2004283489A JP4791015B2 JP 4791015 B2 JP4791015 B2 JP 4791015B2 JP 2004283489 A JP2004283489 A JP 2004283489A JP 2004283489 A JP2004283489 A JP 2004283489A JP 4791015 B2 JP4791015 B2 JP 4791015B2
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- gate
- source electrode
- vertical mosfet
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- 239000010410 layer Substances 0.000 claims description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- 229920005591 polysilicon Polymers 0.000 claims description 31
- 239000011229 interlayer Substances 0.000 claims description 27
- 239000004020 conductor Substances 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- 239000000758 substrate Substances 0.000 description 12
- 238000000059 patterning Methods 0.000 description 11
- 239000010936 titanium Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910015900 BF3 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum copper silicon Chemical compound 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
2 N−型エピタキシャル層
3 P型ベース領域
4 N+型ソース領域
5 溝
6 ゲート酸化膜
7 ゲート電極
8 層間絶縁膜
9,29a,29b コンタクトホール
10 バリアメタル
11,31a,31b 導電体プラグ
12 ソース電極
13 ドレイン電極
21 ゲートポリシリ配線
22 保護ダイオード
23 ゲートアルミ配線
24 ゲートボンディングパッド
25,26 凹部
200 縦型MOSFET
210 ソース電極部
220 一部セル
221 ユニットセル
230 ゲート配線
240 ゲートパッド部
Claims (4)
- 半導体層に形成される溝の内部にゲート電極が形成され、半導体層上に形成される層間絶縁膜上にソース電極が形成され、前記ソース電極が前記層間絶縁膜のコンタクトホールに充填した第1導電体プラグを介して半導体層に形成されるソース領域に電気的接続され、ポリシリコンからなり環状に形成された複数のPN接合を有する保護ダイオードが一端部で前記ソース電極に電気的接続され、他端部でゲート金属配線を介して前記ゲート電極に電気的接続された縦型MOSFETにおいて、
前記保護ダイオードは、半導体層に形成され平面視で四角形をなす凹部内に埋め込まれており、
前記ゲート金属配線と前記保護ダイオードの前記他端部とは、前記保護ダイオードの中央部において、前記第1導電体プラグと同じ断面構造の第2導電体プラグを介して接続されており、
前記ソース電極と前記保護ダイオードの一端部とは、前記四角形をなす前記保護ダイオードの4辺のうちチップ内側の3辺において前記第1及び第2導電体プラグと同じ断面構造の第3導電体プラグを介して接続されていることを特徴とする縦型MOSFET。 - 前記ソース電極と前記ゲート金属配線とが所定距離で近接配置された状態で前記保護ダイオードの周端上を跨いでいることを特徴とする請求項1記載の縦型MOSFET。
- 前記ゲート金属配線と前記ゲート電極とがゲートポリシリ配線を介して電気的接続され、前記ゲートポリシリ配線が半導体層に形成される凹部内に形成されていることを特徴とする請求項1または請求項2記載の縦型MOSFET。
- 前記ソース電極と前記ゲート金属配線とが所定距離で近接配置された状態で前記ゲートポリシリ配線の周端上を跨いでいることを特徴とする請求項3記載の縦型MOSFET。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004283489A JP4791015B2 (ja) | 2004-09-29 | 2004-09-29 | 縦型mosfet |
US11/234,245 US20060065925A1 (en) | 2004-09-29 | 2005-09-26 | Vertical MOSFET |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004283489A JP4791015B2 (ja) | 2004-09-29 | 2004-09-29 | 縦型mosfet |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006100494A JP2006100494A (ja) | 2006-04-13 |
JP4791015B2 true JP4791015B2 (ja) | 2011-10-12 |
Family
ID=36098038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004283489A Expired - Fee Related JP4791015B2 (ja) | 2004-09-29 | 2004-09-29 | 縦型mosfet |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060065925A1 (ja) |
JP (1) | JP4791015B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI265458B (en) * | 2005-06-02 | 2006-11-01 | Avermedia Tech Inc | Audio player |
JP4492735B2 (ja) * | 2007-06-20 | 2010-06-30 | 株式会社デンソー | 半導体装置及び半導体装置の製造方法 |
US8035112B1 (en) | 2008-04-23 | 2011-10-11 | Purdue Research Foundation | SIC power DMOSFET with self-aligned source contact |
JP2014225692A (ja) * | 2008-12-25 | 2014-12-04 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP5775268B2 (ja) * | 2010-06-09 | 2015-09-09 | ローム株式会社 | 半導体装置およびその製造方法 |
JP5638340B2 (ja) * | 2010-10-20 | 2014-12-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5817823B2 (ja) * | 2013-12-27 | 2015-11-18 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP6319057B2 (ja) * | 2014-11-21 | 2018-05-09 | 三菱電機株式会社 | 逆導通型半導体装置 |
JP6222706B2 (ja) * | 2015-07-23 | 2017-11-01 | ローム株式会社 | 半導体装置および半導体パッケージ |
JP6430424B2 (ja) * | 2016-03-08 | 2018-11-28 | 株式会社東芝 | 半導体装置 |
DE102017108047A1 (de) * | 2017-04-13 | 2018-10-18 | Infineon Technologies Ag | Halbleitervorrichtung mit struktur zum schutz gegen elektrostatische entladung |
JP2022007788A (ja) | 2020-06-26 | 2022-01-13 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3082522B2 (ja) * | 1993-07-27 | 2000-08-28 | 日産自動車株式会社 | 絶縁電極およびその製造方法 |
US5477078A (en) * | 1994-02-18 | 1995-12-19 | Analog Devices, Incorporated | Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage |
GB9803108D0 (en) * | 1998-02-13 | 1998-04-08 | Wynne Willson Gottelier Limite | Beam steering apparatus |
JP2000196075A (ja) * | 1998-12-25 | 2000-07-14 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP3642466B2 (ja) * | 1999-04-13 | 2005-04-27 | 関西日本電気株式会社 | 半導体装置の製造方法 |
JP2001257349A (ja) * | 2000-03-09 | 2001-09-21 | Sanyo Electric Co Ltd | Mosfetの保護装置 |
GB0006092D0 (en) * | 2000-03-15 | 2000-05-03 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices |
JP2001352067A (ja) * | 2000-06-06 | 2001-12-21 | Sanyo Electric Co Ltd | Mosfetの保護装置 |
JP2002208702A (ja) * | 2001-01-10 | 2002-07-26 | Mitsubishi Electric Corp | パワー半導体装置 |
JP2002270841A (ja) * | 2001-03-13 | 2002-09-20 | Denso Corp | 半導体装置及びその製造方法 |
JP4608133B2 (ja) * | 2001-06-08 | 2011-01-05 | ルネサスエレクトロニクス株式会社 | 縦型mosfetを備えた半導体装置およびその製造方法 |
JP4854868B2 (ja) * | 2001-06-14 | 2012-01-18 | ローム株式会社 | 半導体装置 |
JP4004843B2 (ja) * | 2002-04-24 | 2007-11-07 | Necエレクトロニクス株式会社 | 縦型mosfetの製造方法 |
JP4913336B2 (ja) * | 2004-09-28 | 2012-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2004
- 2004-09-29 JP JP2004283489A patent/JP4791015B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-26 US US11/234,245 patent/US20060065925A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2006100494A (ja) | 2006-04-13 |
US20060065925A1 (en) | 2006-03-30 |
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